Advanced Laser Technologies in Post-100Gbaud Era

Thursday, 10 June 15:00 – 17:00


Geert Morthier, Ghent Univ. – IMEC, Belgium
Hideyuki Nasu, Furukawa, Japan
Hanxing Shi, Juniper Networks, USA


In this panel, we will have several semiconductor laser experts to intensively present and discuss about their visions on various advanced laser technologies feasible in the post-100Gbaud era, in telecom, datacom, and data center applications.

Directly modulated lasers (DMLs) are attractive to generate high speed optical signals with low power. Several remarkable results of expanded modulation bandwidth recently have been reported on edge-emitters using very specific approaches. We will discuss if these approaches are suitable to practical systems or if there is any barrier to prevent the actual deployment, including operation robustness, reliability, yield, signal integrity, and cost. We also need to discuss the possibilities of adopting these technologies to future VCSELs targeting short-reach applications.

On the other hand, CW lasers (CWLs) integrated with an external modulator has been widely used for Data Center Interconnects (DCIs) and telecom applications. The CW-WDM MSA was established recently to define and promote specifications for multi-wavelength advanced integrated optics for DCIs and telecom applications. We would like to understand the scope of the MSA, and the latest updates, requirements and potential challenges to the CWL deployments. Hybrid integration of a CWL onto a Photonic Integrated Circuit (PIC) has been demonstrated as well as an external laser source for a PIC, but we would like to scrutinize both advantages and disadvantages of each approach.

For long reach telecom systems, narrow-linewidth wavelength-stabilized tunable lasers have been used with digital coherent technologies. The mechanical sizes of optical modules and sub-assemblies have been shrinking and accordingly smaller packaged tunable lasers have been demanded. We want to discuss the capabilities of narrower linewidth, higher output power, lower noise, and lower power consumption for tunable lasers. We will also discuss how to realize smaller packaged tunable lasers for manufacturing.


Shinji Matsuo, NTT, Japan
Directly Modulated Membrane Laser with 100-Gbaud Operation and Its Capability of WDM Transmitter PIC

Yasuhiro Matsui, II-VI, USA
Isolator-Free Low-Chirp Directly Modulated Laser for 400Gb Transmission

Dieter Bimberg, TU Berlin, Germany
Novel VCSEL Designs Integratable to Energy-Efficient Drivers Enabling Low Series Resistance High Power Fundamental Mode Emission for 100+ GBaud

John Johnson, Broadcom Inc., USA
Advanced CW Lasers for Silicon Photonic Applications

Jing Zhang, Ghent Univ.-Imec, Belgium
III-V on Si Integrated Lasers and PICs Realized Using Micro-Transfer Printing

Kazuya Nagashima, Furukawa Electric, Japan
Narrow-Linewidth Wavelength-Tunable Lasers and Their Packaging Technologies