01 Jan 0001
00:00 - 00:00
The bandwidth of the latest switch ASIC has reached at 200 Gb/s per lane. The next target of 400 Gb/s per lane is anticipated to be deployed in the industries around 2028. So far, several optical device candidates have been reported to achieve 400 Gb/s per lane and beyond, and their practical implementation is becoming a reality. In this panel session, we focus on transmitter technologies with IM-DD formats in datacenters. Different material systems for modulation devices have been reported for 200G baud PAM4, such as TF LN, PLZT, BTO, InP, SiPh, and plasmonic modulators. Device candidates will be selected, and their experts will elaborate on the prospects for higher speed modulation capability and their advantages. The speakers will also discuss key factors, including power consumption, scalability for over 400 Gb/s, mechanical size, form factors, and integration capability.
The key discussions to address in this panel are:
- Critical performance FOMs supporting 200 Gbaud+
- Bandwidth, Vπ, loss
- Footprint – Bandwidth density
- How much pJ/bit can be realized?
- Manufacturability
- Throughput
- Yield
- Compatibility with next-generation systems, such as CPO/NPO/LPO
- Most critical challenges
- Roadmap
Organizers
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Hideyuki Nasu
Furukawa Elect Ichihara Phototonics Lab, Japan
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Janet Chen
NVIDIA, USA
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Mizuki Shirao
Mitsubishi Electric Corporation, Japan
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Wei Shi
Université Laval, Canada