Silicon photonics enters a golden era for datacom applications considering its high integrability, versatility and reliability. As AI data centers spearhead to 200GBd/lane, exploring the possibility of making Silicon Photonics reach 200GBd is of great interest. As other materials, such as TFLN, InP, and EO-Polymer, are actively demonstrating their respective 200GBd capabilities, there is a need—and now is the time—to get voices from the Silicon Photonics alliance for 200GBd feasibility and tenacity based on pure Silicon solutions.
This workshop will study the physical limitations of silicon photonics devices from the bandwidth perspective and explore viable solutions and designs to enable 200GBd (PAM4) transmission. The discussion focuses mainly on MZM/MRM modulator capabilities, while the latest progress on slowlight and SiGe EAM modulators as enabling technologies is also studied.
The panelists will navigate the trade-offs among key factors such as bandwidth, modulation efficiency, and insertion loss. The speakers will address the complexity and feasibility concerns associated with different bandwidth expansion techniques. Manufacturing challenges and high-volume readiness will also be addressed.
In parallel, speakers will bring insights from higher levels, encompassing perspectives from end-users about deployment concerns and requirements from system vendors. This includes discussion of advancements in co-packaged/near-packaged optics (CPO/NPO) and next generation pluggable optics.
Panelists are predominantly drawn from industry, with representatives from academia at the forefront of the topic also included.
Organizers
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Ying Zhao
Aloe Semi, United States
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Patrick Lo
Fraunhofer HHI, Germany
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Anna Tatarczak
Coherent, United States
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Oskars Ozolins
RISE Research Institutes of Sweden AB, Latvia