Poster / Demo

Cryogenic Ge-on-Si Avalanche Photodiodes Operating at 1550 nm Wavelength (W2B.17)

Presenter: Xiaofei Liu, Shanghai University

We report the first demonstration of Ge-on-Si APD for 1550 nm wavelength photodetection at the cryogenic temperature down to 11 K, with I_dark=0.369 µA, R=4.84 A/W and G=1840 at V_bias = −20.8 V

Authors:Xiaofei Liu, Shanghai University / Jingchuan Liu, Shanghai University / Funan He, Shanghai University / Ruyuan Ma, Shanghai University / Xingyan Zhao, Shanghai University / Qize Zhong, Shanghai University / Yuan Dong, Shanghai University / Ting Hu, Shanghai University