High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes (Th2A.7)
Presenter: Rimjhim Chaudhary, ETH Zurich
We report the first power performance of Type-II GaInAsSb/InP UTC-PDs. The UTC-PDs attain a zero-bias output power of -14 dBm at 100 GHz, one of the highest reported for any zero-bias photodiodes.
Authors:Rimjhim Chaudhary, ETH Zurich / Akshay Arabhavi, ETH Zurich / Laurenz Kulmer, ETH Zurich / Sara Hamzeloui, ETH Zurich / Marco Eppenberger, ETH Zurich / Martin Leich, ETH Zurich / Olivier Ostinelli, ETH Zurich / Juerg Leuthold, ETH Zurich / Colombo Bolognesi, ETH Zurich