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IPDiA launches a Wire Bonded 0201 (0.6x0.3mm) Ultra-Broadband Silicon Capacitor

MEDIA ADVISORY

14 March 2017

Contact:
Press Contact: laetitia.omnes@ipdia.com / +33 231 535 406

IPDiA launches a Wire Bonded 0201 (0.6x0.3mm) Ultra-Broadband Silicon Capacitor

Capacitor enables direct interconnection between the ICs

IPDiA (a Murata company) has developed a new series of Ultra-Broadband Wire Bonded Silicon Capacitor (UBEC) with 0201 (0.6x0.3mm) form factor.

Compared with surface mounted solution (figure 1), these new capacitors enable a direct interconnection between the ICs without using an electrical conductor on a laminate or ceramic substrate which results in no degradation of the signal. Moreover, this direct interconnection leads to space saving and avoids a surface mounting step.
 
The UBEC capacitors are suitable for DC blocking, coupling and bypass grounding applications in all optoelectronics/high-speed data, trans-impedance amplifiers (TIA), receive-and-transmit optical sub-assembly (ROSA/TOSA), synchronous optical networking (SONET), as well as broadband test equipment and broadband microwave/millimeter-wave.
 
Thanks to a reduction of the wire bond length, they provide better broadband performances with an insertion loss of 0.4 dB up to 60 GHz. They also show very high stability of the capacitance over temperature (60 ppm/°C), over voltage variation as well as a very high reliability. The UBEC capacitors have an extended operating temperature range from -55 to 150°C. The unique technology of integrated passive devices in silicon, developed by IPDiA, offers unique performances with low insertion loss, low reflection and excellent phase stability from 160 kHz(*) to 67 GHz:
  • Ultra-low insertion loss < 0.4 dB up to 60 GHz;
  • Flat frequency response;
  • Excellent return loss > 24 dB;
  • Resonance free and no phase discontinuity;
  • Lower dielectric absorption (0.05%) compared with NP0/X7R;
  • No AC distortion thanks to zero piezo effect;
  • Excellent reliability exceeding X7R ceramics by a factor 10 (FIT);
  • Reliable and repeatable performances obtained thanks to a fully controlled production line with high temperature curing (above 900°C) generating a highly pure oxide. 
These ultra-broadband capacitors with ultra-deep trenches in silicon have been developed using a semiconductor process which enables the integration of trench MOS capacitors providing high capacitance value - for example, 10 nF in a 100 µm low profile 0201M SMT (P/N: 935.157.49B.510) or 5.6 nF in a 100 µm low profile 0201M SMT (P/N: 935.157.72B.456) or 1 nF in a 100 µm low profile 0201M SMT (P/N: 935.157.72B.410).
The UBEC series are compliant with standard JEDEC assembly rules, making the product fully compatible with high speed automated pick-and-place manufacturing operations. They are RoHS-compliant and are available with Aluminum terminations for ball and wedge wire bonding. With 100 Million pieces capacity, IPDiA can support large volumes for production with a short lead-time. A cross reference list of the main capacitor suppliers is available.
 
About IPDiA
IPDiA, now a Murata Company, is a leading manufacturer of Integrated Passive Devices for optical broadband applications, medical, automotive, communication, industrial and high reliability market. The ultra-broadband product range includes:
  • 20/40/60+ GHz Silicon Capacitors, surface mounted or wire bonded vertical;
  • Ultra-broadband interposers and arrays (RC Bias, dual caps, RLC networks with large capacitance value).
IPDiA is located in Caen, France. The manufacturing facility is certified ISO 9001 / 14001 / 18001 as well as ISO TS 16949 for the Automotive market and ISO 13485 for medical devices. IPDiA is supported in terms of Sales by Murata's worldwide force.

For more information, please contact IPDiA: sales@ipdia.com or visit our website www.ipdia.com.
Press Contact: laetitia.omnes@ipdia.com / +33 231 535 406
IPDiA will be exhibiting at OFC 2017 on booth # 1334

 

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