Sunday, 05 March,
13:00
–
15:30
Room 6D
Description:
After more than 30 years of research and more than ten years since the first field deployments, quantum dot (QD) based lasers and semiconductor optical amplifiers (SOAs) have recently begun generating strong interest. QDs offer unique properties and additional degrees of freedom in design compared to traditional quantum wells. They are being explored for use in various applications and monolithic integration into silicon photonics manufacturing platforms. Is this resurgence based on the improved quality of the quantum dots or fundamentally new properties? Is isolator-free on-chip silicon integration the "killer app"? Is this success transferable back to III/V substrates like InP or GaAs? Where further can quantum dots go in performance? Will CdSe, ZSe, or other colloidal quantum dots play a role?
Organizers
Tomoyuki Akiyama, Fujitsu, Japan
Hai-Feng Liu, HGGenuine Optics Tech Co.,Ltd, China
Martin Schell, Fraunhofer HHI, Germany
Speakers
Namyoung Anh, Los Alamos National Laboratory, USA
Yasuhiko Arakawa, Tokyo University, Japan
John Bowers, UCSB, USA
Alexey Kovsh, Alfalume, Inc, USA
Alan Y Liu, Quintessent Inc., USA
Huiyun Liu, University College London, UnitedKingdom
Martin Moehrle, Fraunhofer HHI, Germany
Johann Peter Reithmaier, University of Kassel, Germany
Stephan Reitzenstein, Technical University of Berlin, Germany
Mitsuru Sugawara, QD Laser, Japan
Maksym Sich, Aegiq, UnitedKingdom