APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers (Tu2A.1)
2:00 PM - 2:15 PM
An updated process design kit (APSUNY PDKv3.0) is introduced with verified passive and active O+C+L band silicon photonics component libraries, which includes 50Gbaud (100Gbps) capable modulators, high yield splitters and detectors on 300mm SOI wafers.
Authors: E. Timurdogan, Z. Su, R. Shiue, C.V. Poulton, M.J. Byrd, S. Xin, M.R. Watts, Analog Photonics, Boston, Massachusetts, UNITED STATES
An all-silicon transmitter with co-designed modulator and DC-coupled driver (Tu2A.2)
2:15 PM - 2:30 PM
We present a co-designed silicon traveling wave modulator with a SiGe driver with 6Vpp effective swing. 34GBaud DP-16QAM is demonstrated with comparable ROSNR performance to a commercial CFP2-ACO.
Authors: Y. Ma, C. Williams, M. Ahmed, A. Elmoznine, D. Lim, Y. Liu, R. Shi, T. Huynh, J. Roman, A. Ahmed, L. Vera, Y. Chen, A. Horth, H. Guan, K. Padmaraju, M. Streshinsky, A. Novack, R. Sukkar, R. Younce, A. Rylyakov, D. Scordo, M. Hochberg, Elenion Technologies, New York, New York, UNITED STATES
Reliable Heterogeneous and Monolithic Integrated Silicon Photonics (Tu2A.3)
2:30 PM - 3:00 PM Invited
We will present reliability and performance data from Intel silicon photonics lasers, based on heterogeneous bonding of InP on silicon, and also reliability of quantum dot lasers grown on silicon substrates in collaboration with UCSB.
Authors: R. Herrick, C. Jan, N. Caranto, Reliability Dept., Intel Corporation, Santa Clara, California, UNITED STATES|D. Jung, J. Norman, J. Selvidge, K. Mukherjee, Dept. of Material Science, University of California, Santa Barbara, California, UNITED STATES|J.E. Bowers, Dept. of ECE, University of California, Santa Barbara, California, UNITED STATES
80-km Transmission with Silicon Micro-Ring Modulators and Kramers-Kronig Direct Detection (Tu2A.4)
3:00 PM - 3:15 PM
Single sideband signals generated by micro-ring modulators were demonstrated for 80-km standard single-mode fiber transmission with Kramers-Kronig direct detection. The integrated transmitter with KK receiver is suitable for future low-cost, low-power and low-footprint datacenter interconnects.
Authors: Y. Tong, Q. Zhang, X. Wu, C. Shu, H. Tsang, Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, HONG KONG
64-GBd DP-bipolar-8ASK Transmission over 120 km SSMF Employing a Monolithically Integrated Driver and MZM in 0.25-µm SiGe BiCMOS Technology (Tu2A.5)
3:15 PM - 3:30 PM
We demonstrate 64-GBd signal generation up to bipolar-8-ASK utilizing a single MZM, monolithically integrated with segmented drivers in SiGe. Using polarization multiplexing, 300-Gb/s net data rate transmission over 120 km SSMF is shown.
Authors: G. Raoof Mehrpoor, B. Wohlfeil, D. Rafique, A. Dochhan, M. Eiselt, J. Elbers, Advanced Technology, ADVA Optical Networking SE, Meiningen, GERMANY|C. Schmidt-Langhorst, R. Elschner, R. Emmerich, C. Schubert, Fraunhofer Heinrich Hertz Institute, Berlin, Brandenburg, GERMANY|I. Garcia Lopez, P. Rito, D. Petousi, D. Kissinger, L. Zimmermann, IHP GmbH, Frankfurt (Oder), Brandenburg, GERMANY|G. Raoof Mehrpoor, B. Schmauss, LHFT, Friedrich-Alexander University of Erlangen-Nuremberg, Erlangen, Brandenburg, GERMANY
A Single-mode Expanded Beam Separable Fiber Optic Interconnect for Silicon Photonics (Tu2A.6)
3:30 PM - 3:45 PM
An expanded beam optical interconnect is introduced that provides a separable connection between photonic integrated circuit and single-mode fiber. Insertion loss data are provided and stability through solder reflow is demonstrated.
Authors: D. Schoellner, M. Hughes, D. Childers, D. Kurtz, K. Wang, S. Sengupta, US Conec Ltd, Hickory, North Carolina, UNITED STATES
Multi-core Fiber Socket-assisted Packaging for 84-channel Ultra-dense Silicon Photonics IO (Tu2A.7)
3:45 PM - 4:00 PM
A femtosecond-laser 3D structured silica chip with alignment sockets has permitted precise and compact packaging of multi-core fiber for edge coupling to silicon photonic chips, with average single-pass loss of ~5.6 dB over 84 channels.
Authors: G. Djogo, S. Ho, H. Moez, E. Ertorer, J. Li, P.R. Herman, University of Toronto, Thornhill, Ontario, CANADA|J. Liu, X. Song, J. Suo, Huawei Technologies Co., Ltd., Dongguan, Ontario, CHINA