The Optical Networking and Communication
Conference & Exhibition

San Diego Convention Center,
San Diego, California, USA

Integrated Photonics

  Sunday, March 3 Monday, March 4 Tuesday, March 5 Wednesday, March 6 Thursday, March 7
Workshop: High Noon: Silicon Photonics vs. Rest of the World 1:00 PM - 3:30 PM        
Workshop: Which One Will Succeed in Data Center Applications, Multi-Chip or Monolithic Integrated Optoelectronic Chip? 4:00 PM - 6:00 PM        
Advanced Photonics Technology (M1C)   8:00 AM - 10:00 AM      
Optical Switching Technology (M3B)   2:00 PM - 4:00 PM      
Deployable Technology For Future Networks (M3J)   2:00 PM - 4:00 PM      
High Speed Modulators (M4A)   4:30 PM - 6:30 PM      
Photonic Integration for Data Centers (Tu2I)     2:00 PM - 4:00 PM    
Filters and Couplers (Tu2J)     2:00 PM - 4:00 PM    
Silicon Modulator (Tu2H)     2:00 PM - 4:00 PM    
High Speed Silicon Photonics I (Tu2A)     2:00 PM - 4:00 PM    
Microwave Photonic Chip-scale Subsystems (Tu3I)     4:30 PM - 6:30 PM    
Panel: PIC Foundry Commercial Access: Prospects and Challenges       8:00 AM - 10:00 AM  
Silicon Photonic Switch (W1E)       8:00 AM - 10:00 AM  
Show Floor: Next-Generation Coherent Architectures – Pluggable vs Multi-haul, a Knockout or a Draw?       1:30 PM - 2:30 PM  
Multiplexing and Multichannel Processing (W3I)       2:00 PM - 4:00 PM  
Novel Device Design (W3B)       2:00 PM - 4:00 PM  
High Speed Silicon Photonics II (W3E)       2:00 PM - 4:00 PM  
Lasers on Si (W4E)       4:30 PM - 6:30 PM  
Large-scale Optical Switch (Th1E)         8:00 AM - 10:00 AM

Efficient Thermal Cross-talk Effect Cancellation in Photonic Integrated Circuits (M1C.1)
8:00 AM - 8:15 AM     
A novel technique, named Thermal Eigenmode Decomposition, able to cancel the effects of thermal crosstalk in arbitrary photonic circuits with heathers is presented. The mapping of thermal crosstalk is obtained only with electrical measurements

Authors: M. Milanizadeh, S. Ahmadi, D. Aguiar, A. Melloni, F. Morichetti, Dipartimento di Elettronica Informazione e Bioingegneria , Politecnico di Milano, Milano, MI, ITALY

Impact of Optical Lithography Resolution on Silicon Arrayed Waveguide Grating Performance (M1C.2)
8:15 AM - 8:30 AM     
Silicon AWGs fabricated using 193-nm lithography show a substantial performance improvement over those using 248-nm processes in the same foundry. AWG total crosstalk could be suppressed to -30dB through phase error correction in design.

Authors: J. Wang, K. McGreer, K. Schmidt, M. Hegde, J. Hong, Neophotonics Corporation, San Jose, California, UNITED STATES

Photonic Packaging in Europe: The PIXAPP Pilot Line Project (M1C.3)
8:30 AM - 9:00 AM     Invited
This talk presents an overview an Open Access Photonic Packaging Pilot Line based on the principle of standardised packaging building blocks. The linkage between packaging, design software, device foundries and testing will also be presented.

Authors: P.A. O'Brien, Tyndall National Institute, Cork, IRELAND

A 300mm CMOS-compatible PECVD Silicon Nitride Platform for Integrated Photonics with Low Loss and Low Process Induced Phase Variation (M1C.4)
9:00 AM - 9:15 AM     
Low loss PECVD silicon nitride waveguides at 905 nm (0.2 dB/cm) and 532 nm (1.36 dB/cm) wavelengths are reported. Efficacy of phase variation measurements for identifying process conditions for optical phased array fabrication is demonstrated.

Authors: S.S. Saseendran, T.D. Kongnyuy, B. Figeys, F. Buja, B. Troia, S. Kerman, A. Marinins, R. Jansen, X. Rottenberg, D. Tezcan, P. Soussan, IMEC, Leuven, BELGIUM

An Improved Thermo-optic Phase Shifter with AlN Block for Silicon Photonics (M1C.5)
9:15 AM - 9:30 AM     
We demonstrate an improved TO device by inserting a small AlN block between the heater and waveguide, the efficiency and speed are improved from 9.4 to 8.2 mW/p and from 26 to 32 kHz respectively.

Authors: S. Zhu, T. Hu, Z. XU, Y. Dong, Q. Zhong, Y. Li, N. Singh, Institute of Microelectronics, Singapore, SINGAPORE

3-D PBS & 90 ° Optical Hybrid Circuit Using Novel Planar Polarization Optics (M1C.6)
9:30 AM - 9:45 AM     
We fabricated a novel 3-D PBS & 90 ° hybrid constructed by only stacking glass plates with nanostuctured polarization optics on top. We demonstrated low loss and low phase error sufficient for ICR applications.

Authors: T. KAWASHIMA, T. IJIRO, S. KAWAKAMI, Photonic Lattice, Inc, SENDAI, MIyagi, JAPAN|S. KAWAKAMI, Autocloning technology, SENDAI, MIyagi, JAPAN

Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides (M1C.7)
9:45 AM - 10:00 AM     
An optical-vortex multiplexer/demultiplexer using vertically curved Si waveguides was developed. Multiplexing/demultiplexing with the lowest crosstalk of 23 dB was demonstrated for five multiple optical vortices.

Authors: T. Amemiya, N. Nishiyama, Y. Miyamoto, S. Arai, Tokyo Institute of Technology, TOKYO, JAPAN|T. Yoshida, Y. Atsumi, Y. Sakakibara, National Institute of Advanced Industrial Science and Technology, Tsukuba, JAPAN

Photonic Switching in Datacenters and Computing Systems (M3B.1)
2:00 PM - 3:00 PM     Tutorial
We will discuss technologies, architectures, and control plane/data plane of photonic switching in data centers and computing systems. Scalability, throughput, latency, energy-efficiency, and system-wide impacts on data-systems will also be covered.

Authors: S. Yoo, University of California Davis, Davis, California, UNITED STATES

Low-Loss, Low-Crosstalk Large-Scale Silicon Photonics Switch (M3B.2)
3:00 PM - 3:30 PM     Invited
We review research progress on the strictly-non-blocking optical switches based on the silicon photonics. The current switching performances including loss, crosstalk, bandwidth, and polarization insensitivity are summarized and their future prospects are discussed.

Authors: K. Suzuki, R. Konoike, S. Suda, H. Matsuura, S. Namiki, H. Kawashima, K. Ikeda, Natl Inst of Adv Industrial Sci & Tech, Tsukuba, IBARAKI, JAPAN

High-efficient Black-box Calibration of Large-scale Silicon Photonics Switches by Bacterial Foraging Algorithm (M3B.3)
3:30 PM - 3:45 PM     
Black-box calibration algorithm is highly required for various large-scale silicon photonics devices. We demonstrated bacterial-foraging algorithm to calibrate random phase errors in 32×32 matrix switch by simulating switch as black-box, which promised ≦2min calibration time.

Authors: G. Cong, N. Yamamoto, T. Inoue, M. Okano, Y. Maegami, M. Ohno, K. Yamada, AIST (Natl Inst of Adv Indust Sci&Tech), Tsukuba, IBARAKI, JAPAN

Silicon Photonic Wavelength and Mode Selective Switch for WDM-MDM Networks (M3B.4)
3:45 PM - 4:00 PM     
A novel wavelength and mode selective switch for wavelength-division multiplexing and mode-division multiplexing networks was proposed and demonstrated on a silicon wafer. The fabricated chip integrated 20 thermo-optic elements, with a footprint of 2.3×1.4 mm2.

Authors: L. Han, B.P. Kuo, N. Alic, S. Radic, University of California San Diego, La Jolla, California, UNITED STATES

Nonlinear Mitigation Enabling Next Generation High Speed Optical Transport beyond 100G. (M3J.1)
2:00 PM - 2:30 PM     Invited
We consider methods for containment of the effects of optical nonlinearities in coherent optical transmission. These are distinguished according to their practicality and effectiveness.

Authors: K. Roberts, M. O'Sullivan, M. Reimer, M. Hubbard, Ciena Corporation, Ottawa, Ontario, CANADA

Closer to Shannon (M3J.2)
2:30 PM - 3:00 PM     Invited
Despite the sophistication of existing optical transport solutions, substantial additional capacity and reach gains can be achieved through improvements in the areas of implementation penalty, nonlinear propagation, forward error correction, and modulation.

Authors: C. Rasmussen, Acacia Communications Inc., Maynard, Massachusetts, UNITED STATES

Next Generation Silicon Photonic Interconnect Solutions (M3J.3)
3:00 PM - 3:30 PM     Invited
, Silicon Photonics is expected to be the technology platform to address next-generation optical interconnect solutions. By leveraging existing semiconductor production infrastructure and processes as well as building complex optical system-on-chip solutions, SiPh enables opportunities for a wide range of new applications.

Authors: M. Bohn, P. Magill, M. Hochberg, D. Scordo, A. Novack, M. Streshinsky, Elenion Technologies, New York, New York, UNITED STATES

Field Test of Installed High-Density Optical Fiber Cable with Multi-Core Fibers toward Practical Deployment (M3J.4)
3:30 PM - 3:45 PM     
A field trial of high-density 0.92-km 200-fiber cable with 5-core fibers (5CFs) was conducted for reliability tests. No degradation of cable attenuation of 5CFs was observed even after installation into underground conduits and aerial area.

Authors: T. Tsuritani, D. Soma, I. Morita, KDDI Research, Inc., Saitama, JAPAN|Y. Wakayama, Y. Miyagawa, M. Takahashi, KDDI Coorperation, Tokyo, JAPAN|K. Maeda, K. Kawasaki, T. Matsuura, M. Tsukamoto, R. Sugizaki, Furukawa Electric, Chiba, JAPAN

Accurate Fault Location based on Deep Neural Evolution Network in Optical Networks for 5G and Beyond (M3J.5)
3:45 PM - 4:00 PM     
This paper presents an accurate fault location method based on deep neural evolution network in optical networks. Experiments indicate that the proposed method improves the accuracy of fault location when confronted with large-scale alarm sets.

Authors: X. Zhao, H. Yang, J. Zhang, Beijing University of Posts and Telecom., Beijing, BeiJIng, CHINA|H. Guo, T. Peng, ZTE, Shenzhen, BeiJIng, CHINA

A Guide for Material and Design Choices for Electro-Optic Modulators (M4A.1)
4:30 PM - 5:00 PM     Invited
Here we discuss a) fundamental performance vectors of electro-optic modulators, and b) showcase recent development of heterogeneous-integrated emerging EO materials into Si-photonics to include an ITO-based MZM, a Graphene hybrid-plasmon and the first TMD-MRR modulator.

Authors: R. Amin, Z. Ma, M. Tahersima, R. Maiti, M. Miscuglio, V.J. Sorger, George Washington University, Washington, District of Columbia, UNITED STATES|H. Dalir, Omega Optics Inc, Austin, Texas, UNITED STATES

Efficient Optical Modulator by Reverse-biased III-V/Si Hybrid MOS Capacitor based on FK Effect and Carrier Depletion (M4A.2)
5:00 PM - 5:15 PM     
We present efficient optical phase modulation based on Franz-keldysh effect and carrier depletion in reverse-biased III-V/Si hybrid MOS capacitor. The high modulation efficiency and small capacitance enables significant improvement in modulation bandwidth and modulation energy.

Authors: Q. Li, C. Ho, S. Takagi, M. Takenaka, University of Tokyo, Tokyo, ToKyo, JAPAN|C. Ho, Japan Society for Promotion of Science Fellowship, Tokyo, ToKyo, JAPAN

56-Gbit/s Operations of Mach-Zehnder Modulators Using 300-μm-long Membrane InGaAsP Phase Shifters and SiN waveguides on Si (M4A.3)
5:15 PM - 5:30 PM     
Mach-Zehnder modulators using 300-μm-long membrane phase shifters and SiN waveguides, in which InGaAsP core is buried with InP, are fabricated on Si. Devices exhibit 56-Gbit/s NRZ signal modulations with clear eye-openings.

Authors: T. Aihara, T. Hiraki, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo, NTT, Atsugi-shi, KANAGAWA, JAPAN

Design of Very High Speed InP Modulators (M4A.4)
5:30 PM - 6:30 PM     Tutorial
Electroabsorption modulators based on InP have been proven useful for fiberoptical communication at speeds beyond 100Gbit/s serial transmission. The key to the high modulation speeds is the combination of semiconductor technology, photonics, and microwave engineering.

Authors: U. Westergren, Applied Physics, Photonics unit, KTH Royal Institute of Technology, Stockholm, SWEDEN

The Basics of How the Advanced LIGO Detector Works (M4E.1)
4:30 PM - 5:30 PM     Tutorial
This tutorial will cover the basics physics and engineering of how the Advanced LIGO interferometers work. It will include a discussion of some of the decisions made and will highlight several of the lesser known subsystems.

Authors: S.E. Whitcomb, E. Gustafson, LIGO Laboratory, California Institute of Technology, Pasadena, California, UNITED STATES

Large-scale silicon photonic phased array chip for single-pixel ghost imaging (M4E.2)
5:30 PM - 5:45 PM     
We develop large-scale optical phased array (OPA) with 128 phase shifters integrated on a compact silicon chip for single-pixel ghost imaging application. By using speckle illumination pattern generated from OPA, calibration-free robust imaging is demonstrated.

Authors: Y. Kohno, K. Komatsu, Y. Ozeki, Y. Nakano, T. Tanemura, The University of Tokyo, Tokyo, JAPAN

MWIR Solid-State Optical Phased Array Beam Steering using Germanium-Silicon Photonic Platform (M4E.3)
5:45 PM - 6:00 PM     
We demonstrate a chip-scale germanium-silicon optical phased array fabricated on a Bi-CMOS compatible platform capable of beam steering in the mid-infrared wavelength. We achieved beam steering angle up to 12.7° with beam divergence of 0.47°×2.86°.

Authors: M. Prost, Y. Ling, S. Cakmakyapan, Y. Zhang, K. Zhang, J. Hu, Y. Zhang, S. Yoo, University of California, Davis, Davis, California, UNITED STATES

Two-Dimensional Beam Steering Device Based on VCSEL Slow-Light Waveguide Array with Amplifier Function (M4E.4)
6:00 PM - 6:15 PM     
We demonstrated two-dimensional beam steering by using VCSEL-based slow-light waveguide array with large angular dispersion of 1.8°/nm, which showed potential to achieve resolution point of over 10,000 dots. We obtained chip gain of 18.4 dB.

Authors: K. Kondo, X. Gu, Z. Ho, F. Koyama, FIRST, Tokyo Institute of Technology, Yokohama, Kanagawa, JAPAN|A. Matsutani, Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, Yokohama, Kanagawa, JAPAN

Serpentine Optical Phased Array Silicon Photonic Aperture Tile with Two-Dimensional Wavelength Beam Steering (M4E.5)
6:15 PM - 6:30 PM     
We propose and demonstrate a passive microphotonic phased-array aperture that wavelength-steers a beam in 2-D, showing 14,000 resolvable spots. It is tileable into larger apertures with fill factor above 50%, an improvement of 16x over previous work.

Authors: B. Zhang, A. Khilo, K. Al’Qubaisi, D. Onural, M. Popovic, Boston University, Boston, Massachusetts, UNITED STATES|N. Dostart, M. Brand, D. Feldkhun, M. Popovic, K. Wagner, University of Colorado, Boulder, Boulder, Colorado, UNITED STATES

APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers (Tu2A.1)
2:00 PM - 2:15 PM     
An updated process design kit (APSUNY PDKv3.0) is introduced with verified passive and active O+C+L band silicon photonics component libraries, which includes 50Gbaud (100Gbps) capable modulators, high yield splitters and detectors on 300mm SOI wafers.

Authors: E. Timurdogan, Z. Su, R. Shiue, C.V. Poulton, M.J. Byrd, S. Xin, M.R. Watts, Analog Photonics, Boston, Massachusetts, UNITED STATES

An all-silicon transmitter with co-designed modulator and DC-coupled driver (Tu2A.2)
2:15 PM - 2:30 PM     
We present a co-designed silicon traveling wave modulator with a SiGe driver with 6Vpp effective swing. 34GBaud DP-16QAM is demonstrated with comparable ROSNR performance to a commercial CFP2-ACO.

Authors: Y. Ma, C. Williams, M. Ahmed, A. Elmoznine, D. Lim, Y. Liu, R. Shi, T. Huynh, J. Roman, A. Ahmed, L. Vera, Y. Chen, A. Horth, H. Guan, K. Padmaraju, M. Streshinsky, A. Novack, R. Sukkar, R. Younce, A. Rylyakov, D. Scordo, M. Hochberg, Elenion Technologies, New York, New York, UNITED STATES

Reliable Heterogeneous and Monolithic Integrated Silicon Photonics (Tu2A.3)
2:30 PM - 3:00 PM     Invited
We will present reliability and performance data from Intel silicon photonics lasers, based on heterogeneous bonding of InP on silicon, and also reliability of quantum dot lasers grown on silicon substrates in collaboration with UCSB.

Authors: R. Herrick, C. Jan, N. Caranto, Reliability Dept., Intel Corporation, Santa Clara, California, UNITED STATES|D. Jung, J. Norman, J. Selvidge, K. Mukherjee, Dept. of Material Science, University of California, Santa Barbara, California, UNITED STATES|J.E. Bowers, Dept. of ECE, University of California, Santa Barbara, California, UNITED STATES

80-km Transmission with Silicon Micro-Ring Modulators and Kramers-Kronig Direct Detection (Tu2A.4)
3:00 PM - 3:15 PM     
Single sideband signals generated by micro-ring modulators were demonstrated for 80-km standard single-mode fiber transmission with Kramers-Kronig direct detection. The integrated transmitter with KK receiver is suitable for future low-cost, low-power and low-footprint datacenter interconnects.

Authors: Y. Tong, Q. Zhang, X. Wu, C. Shu, H. Tsang, Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, HONG KONG

64-GBd DP-bipolar-8ASK Transmission over 120 km SSMF Employing a Monolithically Integrated Driver and MZM in 0.25-µm SiGe BiCMOS Technology (Tu2A.5)
3:15 PM - 3:30 PM     
We demonstrate 64-GBd signal generation up to bipolar-8-ASK utilizing a single MZM, monolithically integrated with segmented drivers in SiGe. Using polarization multiplexing, 300-Gb/s net data rate transmission over 120 km SSMF is shown.

Authors: G. Raoof Mehrpoor, B. Wohlfeil, D. Rafique, A. Dochhan, M. Eiselt, J. Elbers, Advanced Technology, ADVA Optical Networking SE, Meiningen, GERMANY|C. Schmidt-Langhorst, R. Elschner, R. Emmerich, C. Schubert, Fraunhofer Heinrich Hertz Institute, Berlin, Brandenburg, GERMANY|I. Garcia Lopez, P. Rito, D. Petousi, D. Kissinger, L. Zimmermann, IHP GmbH, Frankfurt (Oder), Brandenburg, GERMANY|G. Raoof Mehrpoor, B. Schmauss, LHFT, Friedrich-Alexander University of Erlangen-Nuremberg, Erlangen, Brandenburg, GERMANY

A Single-mode Expanded Beam Separable Fiber Optic Interconnect for Silicon Photonics (Tu2A.6)
3:30 PM - 3:45 PM     
An expanded beam optical interconnect is introduced that provides a separable connection between photonic integrated circuit and single-mode fiber. Insertion loss data are provided and stability through solder reflow is demonstrated.

Authors: D. Schoellner, M. Hughes, D. Childers, D. Kurtz, K. Wang, S. Sengupta, US Conec Ltd, Hickory, North Carolina, UNITED STATES

Multi-core Fiber Socket-assisted Packaging for 84-channel Ultra-dense Silicon Photonics IO (Tu2A.7)
3:45 PM - 4:00 PM     
A femtosecond-laser 3D structured silica chip with alignment sockets has permitted precise and compact packaging of multi-core fiber for edge coupling to silicon photonic chips, with average single-pass loss of ~5.6 dB over 84 channels.

Authors: G. Djogo, S. Ho, H. Moez, E. Ertorer, J. Li, P.R. Herman, University of Toronto, Thornhill, Ontario, CANADA|J. Liu, X. Song, J. Suo, Huawei Technologies Co., Ltd., Dongguan, Ontario, CHINA

Silicon Photonic Modulators for High-Capacity Coherent Transmissions (Tu2H.1)
2:00 PM - 2:30 PM     Invited
We discuss system-orientated design and optimization of all-silicon modulators for high-baud-rate (up to 84GBaud) coherent transmissions. We achieved single-carrier net-600Gb/s DP-32QAM, net-400Gb/s DP-16QAM over 1520km; and 800Gb/s super-channel using a silicon-modulator optical frequency comb.

Authors: W. Shi, J. Lin, H. Sepehrian, S. Zhalehpour, L. Rusch, Department of Electrical and Computer Engineering & Center for Optics, Photonics, and Lasers (COPL), Université Laval, Quebec, Quebec, CANADA|J. Lin, H. Sepehrian, Z. Zhang, Huawei Technologies Canada Co., Ltd., Ottawa, Ontario, CANADA

Silicon Photonics Carrier Depletion Modulators Capable of 85Gbaud 16QAM and 64Gbaud 64QAM (Tu2H.2)
2:30 PM - 2:45 PM     
We achieved high performance silicon photonics carrier-depletion Mach-Zehnder modulation with a commercial foundry by optimizing doping and device design. We demonstrated IQ modulator operating at 85Gbaud 16QAM and 64Gbaud 64 QAM with >25dB extinction ratio.

Authors: J. Zhou, J. Wang, L. Zhu, Q. Zhang, J. Hong, NeoPhotonics, San Jose, California, UNITED STATES|Q. Zhang, ECET Department, Minnesota State University, Mankato, Minnesota, UNITED STATES

SiPh Self-coherent Transmitter Circuit with on-chip CSPR Control Capability based on a Tunable Power Splitter (Tu2H.3)
2:45 PM - 3:00 PM     
We present a novel CSPR controllable silicon photonic transmitter circuit based on a tunable power splitter for VSB self-coherent transmissions. 112 Gb/s 16 QAM over 80 km at a BER below 3.8×10-3 has been achieved.

Authors: Z. Xing, D. Patel, E. Elfiky, M. XIANG, R. Li, M. Saber, L. Xu, M. Hui, D. Plant, McGill University, Montreal, Quebec, CANADA

Sub-fJ/bit Operation of 100 GBd Plasmonic IQ Modulators (Tu2H.4)
3:00 PM - 3:15 PM     
A 100 GBd QPSK (200 Gbit/s) plasmonic IQ modulator operating with sub-1V drive voltages and low 0.6 fJ/bit electrical energy consumption is shown. Furthermore, 100 GBd 16QAM (400 Gbit/s) operation with 2 fJ/bit is demonstrated.

Authors: D. Elder, L. Dalton, Department of Chemistry, University of Washington, Seattle, Washington, UNITED STATES|W. Heni, Y. Fedoryshyn, B. Baeuerle, A. Josten, C. Hoessbacher, A. Messner, C. Haffner, Y. Salamin, U. Koch, T. Watanabe, J. Leuthold, Institute of Electromagnetic Fields (IEF), ETH Zurich, Zurich, Washington, SWITZERLAND

110 Gbit/s On-Off Keying Transmitter Based on a Single-Drive Polymer Modulator (Tu2H.5)
3:15 PM - 3:30 PM     
We demonstrate a 110Gbit/s OOK transmission using a hybrid silicon and polymer EO modulator with BER below FEC threshold. It has high thermal-stability, >100G operation bandwidth, 3.5dB extinction ratio and low driving-voltages of 3.5V.

Authors: S. Yokoyama, G. Lu, X. Cheng, F. Qiu, A. Spring, Kyushu University, Kasuga, Fukuoka, JAPAN|G. Lu, Tokai University, Kanagawa, Fukuoka, JAPAN

Integrable Thin Film Lithium Niobate (TFLN™) on Silicon Electro-optic Modulators (Tu2H.6)
3:30 PM - 3:45 PM     
A thin film lithium niobate on silicon modulator is demonstrated with 2.5V Vpi, 50 GHz bandwidth, and < 0.5 dB/cm loss. An optimized design features < 5mm length, < 2V Vpi and 60 GHz bandwidth.

Authors: V. Stenger, A. Pollick, C. Acampado, SRICO, Inc, Columbus, Ohio, UNITED STATES

Characterizations of Semiconductor Optical Amplifiers for 64Gbaud 16-64QAM Coherent Optical Transceivers (Tu2H.7)
3:45 PM - 4:00 PM     
We demonstrated semiconductor optical amplifiers capable of operating at 64Gbaud for 16-64QAM modulation with large dynamic ranges. The full characterizations of SOA as transmitter booster and receiver pre-amplifier for 400Gb/s to 600Gb/s applications were reported.

Authors: J. Zhou, L. Zhu, D. Wong, H. Wang, M. Boudreau, J. Sun, J. Huang, P. Wang, G. Ji, J. Hong, NeoPhotonics, San Jose, California, UNITED STATES

A 25-Gbps x 4 ch, Low-Power Compact Wire-Bond-Free 3D-Stacked Transmitter Module with 1.3-μm LD-Array-on-Si for On-Board Optics (Tu2I.1)
2:00 PM - 2:15 PM     
A 4-channel wire-bond-free 3D-stacked transmitter module consisting of a 65-nm CMOS cascode shunt LD driver, 1.3-μm LD-array-on-Si, and LTCC interposer achieves simultaneous 4-channel 25-Gbps error-free transmission over 1.2-km-long SSMF, with power consumption of 2.67 mW/Gbps.

Authors: T. Kishi, H. Wakita, K. Shikama, M. Nagatani, T. Fujii, H. Nishi, H. Ishikawa, Y. Kawajiri, A. Aratake, H. Nosaka, H. Fukuda, S. Matsuo, NTT Device Technology Laboratories, Atsugi-shi, JAPAN|S. Kanazawa, NTT Device Innovation Center, Atsugi-shi, JAPAN

104 Gbaud OOK and PAM-4 Transmission over 1km of SMF using a Silicon Photonics Transmitter with Quarter-Rate Electronics (Tu2I.2)
2:15 PM - 2:30 PM     
We present a silicon photonics transmitter using four GeSi EAMs driven at 26 Gbaud with 1.2Vpp to realize the fastest reported single-wavelength PAM-4 transmission on silicon at 208 Gb/s over 1km of SMF.

Authors: J. Verbist, J. Van Kerrebrouck, X. Yin, J. Bauwelinck, IDLab, Ghent University - IMEC, Ghent, BELGIUM|J. Verbist, G. Roelkens, Photonics Research Group, Ghent University - imec, Ghent, BELGIUM|M. Lillieholm, M. Galili, L.K. Oxenløwe, DTU Fotonik, Technical University of Denmark, Lyngby, DENMARK|S. Srinivasan, P. De Heyn, J. Van Campenhout, imec, Leuven, BELGIUM

Stokes Vector Modulation and Detection with Monolithic InP Photonic Integrated Circuits (Tu2I.3)
2:30 PM - 3:00 PM     Invited
Stokes-vector modulation direct-detection (SVM-DD) formats are expected as costeffective methods to transmit multi-level signals in short-reach links. In this talk we review our novel SV modulator and receiver circuits realized on monolithic InP platforms.

Authors: Y. Nakano, T. Tanemura, S. Ghosh, M.N. Kazi, The University of Tokyo, Bunkyo-ku, TOKYO, JAPAN

400 Gbps PAM-4 Signal Transmission Using a Monolithic Laser Integrated Silicon Photonics Transmitter (Tu2I.4)
3:00 PM - 3:15 PM     
In this paper, we experimentally demonstrated a 400 Gbps PAM-4 monolithic laser integrated silicon photonics CWDM4 transmitter for 400GE short reach applications. 4x106 Gbps (400GE) PAM-4 signal transmission over 2 km of SMF with BER lower than KP4-FEC threshold is achieved.

Authors: K. Zhong, J. mo, Macom Technology Solutions Inc, SHENZHEN, CHINA|A. Lau, eletrical engineering, the hong kong polytechnic uiversity, HONG KONG, HONG KONG|R. Grzybowski, MACOM Technology Solutions Inc, Horseheads, New York, UNITED STATES

Genetic Algorithm Optimization of Multi Core Fibre Transmission Links based on Silicon Photonic Transceivers (Tu2I.5)
3:15 PM - 3:30 PM     
We demonstrate a genetic algorithm based system that can optimize optical interconnects using silicon photonic multi-core fibre coupled transceiver. The GA selects 48 parameters to deliver a minimum 6.94x10-16 BER on channels with diverse losses.

Authors: A. Ottino, A. Saljoghei, G. Zervas, University College London (UCL), London, UNITED KINGDOM|T. Hayashi, T. Nakanishi, Optical Communications Laboratory, Sumitomo Electric Industries, Ltd., Yokohama , JAPAN|C. Kochis, P. De Dobbelaere, Luxtera Inc., Carlsbad , California, UNITED STATES

Integrated-photonic Tunable Demultiplexer for Variable Channel Number Optical OFDM Signals (Tu2J.1)
2:00 PM - 2:15 PM     
We report a tunable OFDM demultiplexer whose major element is a star coupler-based optical DFT circuit. Variable channel number 20 to 100 Gsymbol/s OFDM signals were demultiplexed by selecting delay lines into the star coupler.

Authors: K. Takiguchi, H. Masaki, T. Taguchi, Ritsumeikan University, Kusatsu, Shiga, JAPAN

Low-loss and Fabrication-tolerant Si Four-wavelength Multiplexer Using Higher-order Mode for 100/400GbE (Tu2J.2)
2:15 PM - 2:30 PM     
A Si four-wavelength multiplexer for 100/400GbE composed of (a)symmetric directional couplers and a rib-waveguide mode-converter is experimentally demonstrated. Proposed device is fabrication-tolerant due to the removal of 1600-GHz filter used in conventional two-stage Mach-Zehnder multiplexers.

Authors: J. Takano, T. Fujisawa, T. Sato, Y. Sawada, K. Saitoh, Hokkaido University, Sapporo, Hokkaido, JAPAN|T. Sakamoto, T. Matsui, K. Tsujikawa, K. Nakajima, NTT Access Network Service Systems Laboratories, Tsukuba, Ibaraki, JAPAN

Tunable Filters in the Evolving Optical Communication Network (Tu2J.3)
2:30 PM - 3:00 PM     Invited
Tunable optical filters are a key enabler of flexible, high density and high bandwidth optical communication systems. We describe the evolution of fundamental technologies and applications for tunable optical filters in dynamic, reconfigurable networks.

Authors: G.D. Bartolini, M.J. Cahill, II-VI Photonics, Woburn, Massachusetts, UNITED STATES

Broadband-tunable Cascaded Vernier Silicon Photonic Microring Filter with Temperature Tracking (Tu2J.4)
3:00 PM - 3:15 PM     
We report a 4th-order Vernier silicon microring filter consisting of two cascaded stages with 32 nm tuning range and better than 30 dB isolation. On-chip thermistors allow device temperature to be tracked with ±0.1°C accuracy.

Authors: Y. Ren, D. Perron, F. Aurangozeb, M. Hossain, V. Van, University of Alberta, Edmonton, Alberta, CANADA|Z. Jiang, HUAWEI Canada Research Centre, Kanata, Ontario, CANADA

Efficient Optical I/O in Standard Silicon Photonics Process (Tu2J.5)
3:15 PM - 3:30 PM     
We demonstrate grating coupler based, efficient optical I/Os for silicon pho- tonic(SiPh) chip-to-fiber and chip-to-chip applications. Standard single-mode fiber(SSMF)- to-chip interface experimentally shows coupling efficiency of -1.3dB. The reported I/Os are fabricated in standard SiPh process.

Authors: A. Melikyan, T. Hu, K. Kim, Y. Baeyens, M. Earnshaw, P. Dong, Nokia/Bell Labs, Holmdel, New Jersey, UNITED STATES

Trident Shape SOI Metamaterial Fiber-to-chip Edge Coupler (Tu2J.6)
3:30 PM - 3:45 PM     
We propose a fiber-to-chip edge coupler based on trident-shaped dielectric metamaterial. Experiment shows < 2 dB/facet coupling loss with high NA fiber and near 0.5 dB/facet coupling loss using lensed fiber at the best polarization.

Authors: M. TENG, B. Niu, K. Han, S. Kim, Y. Xuan, Y. Lee, M. Qi, Purdue University, West Lafayette, Indiana, UNITED STATES

Broadband and Polarization Insensitive Surface Optical Coupler Using Vertically Curved Waveguides Fabricated with ArF-immersion Lithography (Tu2J.7)
3:45 PM - 4:00 PM     
Vertically-curved Si waveguide using 45nm-node ArF-immersion lithography and ion implantation bending method showed <2.5dB minimum coupling loss, >130nm/0.5dB spectrum bandwidth for 5µm-MFD fiber coupling in both TE- and TM-polarization with very small polarization dependence.

Authors: T. Yoshida, Y. Atsumi, E. Omoda, Y. Sakakibara, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, JAPAN

0-40 GHz-Tunable RF Receivers On Chip exploiting a Noise-Cancelling Architecture and a Silicon Photonic Modulator (Tu3I.1)
4:30 PM - 4:45 PM     
A widely-tunable RF receiver based on a novel digital feed-forward noise cancellation technique and a silicon photonic modulator is presented. Its capabilities, in terms of bandwidth, linearity, and on-chip integration trough silicon-on-insulator technology are analyzed.

Authors: D. Onori, B.G. Crockett, J. Azana, Énergie, Matériaux et Télécommunications, Institut national de la recherche scientifique, Varennes, Quebec, CANADA|A. Samani, D. Plant, Electrical and Computer Engineering, McGill University, Montreal, Quebec, CANADA

Microwave Photonic Links: Optimizing SiP Modulator Design and Operation (Tu3I.2)
4:45 PM - 5:00 PM     
We experimentally demonstrate improved microwave photonic link performance by optimizing integrated modulator biases and show that plasma-dispersion modulators may achieve intrinsic linearity on par with lithium niobate modulators with link SFDRs greater than 100 dB-Hz2/3.

Authors: C.G. Bottenfield, V.A. Thomas, S.E. Ralph, Georgia Institute of Technology, Atlanta, Georgia, UNITED STATES

Microwave Photonic Subsystems-on-Chip (Tu3I.3)
5:00 PM - 5:30 PM     Invited
Microwave photonic subsystems are rapidly evolving from discrete to chip-scale implementations, enabled by the tight integration of active/passive photonic integrated circuits into multi-chip-modules. This paper reviews the recent advances in this field.

Authors: S. Yegnanarayanan, D. Kharas, J. Plant, C. Sorace-Agaskar, P. Juodawlkis, Massachusetts Inst of Tech Lincoln Lab, Lexington, Massachusetts, UNITED STATES

Programmable Integrated Optical Signal Processors: Toward an Optical Heart in Communication Devices (Tu3I.4)
5:30 PM - 6:30 PM     Tutorial
Having an optical heart in communication devices means the potential for performing signal processing tasks with order-of-magnitude improvement in bandwidth, latency, and power efficiency. I review the fundementals and onging worldwide efforts on this exciting topic.

Authors: L. Zhuang, imec USA (Florida), Kissimmee, Florida, UNITED STATES

Fast and Wide-range Wavelength Locking Based on a Two-layer Neural Network in a Silicon Microring Switch (W1E.1)
8:00 AM - 8:15 AM     
We propose and experimentally demonstrate a neural-network-based wavelength locking algorithm for a 1 × 2 silicon microring switch. The wavelength locking is performed at a 20-nm/ms locking speed over a full free spectral range.

Authors: Q. Zhu, S. An, R. Cao, Y. Ling, Y. Su, Shanghai Jiao Tong University, Shanghai, ShangHai, CHINA

A Nonblocking 4×4 Mach-Zehnder Switch with Integrated Gain and Nanosecond-scale Reconfiguration Time (W1E.2)
8:15 AM - 8:30 AM     
We present a silicon photonic switch assembly integrating a nonblocking 4×4 Mach-Zehnder switch and a flip-chipped SOA array. The switch provides close to net-neutralloss in the full C-band for all states and shows nanosecond-scale reconfiguration time.

Authors: N. Dupuis, F. Doany, R. Budd, L. Schares, C. Baks, D. Kuchta, T. Hirokawa, B.G. Lee, IBM TJ Watson Research Center, Yorktown Heights, New York, UNITED STATES

Silicon Photonic Devices for Optical Switching in Wavelength, Polarization and Mode (W1E.3)
8:30 AM - 9:00 AM     Invited
We present our recent work on thermal-optical switching on silicon chips, including two nanobeam switches with wavelength tuning, and a mode and polarization selective switch having a 748-Gb/s capacity on a single wavelength.

Authors: Y. Su, Y. Zhang, C. Qiu, H. Zhou, X. Jiang, Q. Zhu, Y. He, Shanghai Jiao Tong University, Shanghai, SHANGHAI, CHINA

Silicon Polarization Splitter and Rotator with Tolerance to Width Variations Using a Nonlinearly-tapered and Partially-etched Directional Coupler (W1E.4)
9:00 AM - 9:15 AM     
A silicon polarization splitter and rotator is experimentally demonstrated using a nonlinearly-tapered directional coupler. Adiabatic polarization splitting and rotating are achieved over a length of 129 μm. Fabrication tolerance to waveguide widths is also verified.

Authors: Y. Zhang, Q. Zhu, Y. He, Y. Su, Shanghai Jiao Tong University, Shanghai , ShangHai, CHINA

High Extinction Ratio and Broadband O-band Polarization Splitter and Rotator on Silicon-on-insulator (W1E.5)
9:15 AM - 9:30 AM     
We experimentally demonstrate a silicon photonic O-band polarization splitter and rotator. The wafer-level extinction ratio over 80 nm bandwidth has an average of 21.82 dB and 19.05 dB for the upper and lower ports, respectively.

Authors: E. Elfiky, Y. Wang, S. bernal, A. Kumar, A. Samani, M. Jacques, D. Plant, McGill University, Montreal, Quebec, CANADA|C. Gamache, E. Panorel, Lumentum, Ottawa, Ontario, CANADA|P. Koh, Lumentum, Milpitas, California, UNITED STATES

Dual-Microring Resonator Based 8×8 Silicon Photonic Switch (W1E.6)
9:30 AM - 9:45 AM     
First demonstration of a dual-microring 8×8 silicon-photonic switch in a compact 4 mm2 footprint shows 4.4-8.4 dB end-to-end on-chip loss, -16.75 dB first-order switching crosstalk, and 40 GHz switching bandwidth capable of high-data-rate datacenter transmissions.

Authors: Y. Huang, Q. Cheng, Y. Hung, A. Novack, K. Bergman, Columbia University, New York, New York, UNITED STATES|H. Guan, A. Novack, M. Streshinsky, M. Hochberg, Elenion Technologies, New York, New York, UNITED STATES

Fully reconfigurable waveguide Bragg gratings for programmable photonic signal processing (W3B.1)
2:00 PM - 2:30 PM     Invited
Fully reconfigurable silicon-based waveguide Bragg gratings for programmable photonic signal processing are discussed. Two waveguide grating structures are introduced and their experimental verifications are provided.

Authors: J. Yao, W. Zhang, Ottawa University, Ottawa, Ontario, CANADA

Inverse Design and Demonstration of Ultracompact Silicon Polarization Rotator (W3B.2)
2:30 PM - 2:45 PM     
An ultra-compact silicon polarization rotator based on inverse-designed subwavelength structures is proposed and experimentally exhibited high performance with high extinction ratio of 19 dB, a footprint of 1.2 × 7.2 µm2 and only one-step etching.

Authors: W. Chang, Y. Ao, L. lu, S. Fu, L. deng, M. Cheng, L. Xia, D. Liu, M. Zhang, Huazhong Univ. of Science and Technology, Wuhan, HUBEI, CHINA

50GHz Silicon Cascaded Mach-zehnder Wavelength Filter and Automatic Phase Error Correction (W3B.3)
2:45 PM - 3:00 PM     
We demonstrate a silicon photonic 50GHz 16-channel cascaded Mach-Zehnder wavelength filter with over 26dB extinction ratio. An automatic phase error correction method was also proposed and implemented to guarantee filter transfer characteristic.

Authors: L. Han, B.P. Kuo, A. Pejkic, N. Alic, S. Radic, University of California San Diego, La Jolla, California, UNITED STATES

First Experimental Demonstration of Wavefront-matching-method-designed Silicon Mode Converters (W3B.4)
3:00 PM - 3:15 PM     
Ultrasmall TE0-TE1 and TE1-TE2 mode converters based on Si-wire waveguides designed by wavefront matching (WFM) method are demonstrated both theoretically and experimentally. This is the first demonstration of WFM-designed Si waveguide devices.

Authors: Y. Sawada, T. Fujisawa, T. Sato, K. Saitoh, Hokkaido University, Sapporo, HOKKAIDO, JAPAN

Deep Neural Network Inverse Modeling for Integrated Photonics (W3B.5)
3:15 PM - 3:30 PM     
We propose a deep neural network model that instantaneously predicts the optical response of nanopatterned silicon photonic power splitter topologies, and inversely approximates compact (2.6 x 2.6 um2) and efficient (above >92%) power splitters for target splitting ratios.

Authors: M. Tahersima, K. Kojima, T. Koike-Akino, D. Jha, B. Wang, C. Lin, K. Parsons, Mitsubishi Electric Research Labs, Cambridge , Massachusetts, UNITED STATES

4-port Integrated Stokes Vector Receiver Circuit for Multi-level 3D Signal Detection and OSNR Monitoring (W3B.6)
3:30 PM - 3:45 PM     
A novel Stokes vector (SV) receiver circuit with 4-port configuration integrated on a compact InP chip is fabricated to demonstrate SV retrieval with various intensity and degree-of-polarization as well as application to in-band OSNR monitoring.

Authors: T. Suganuma, S. Ghosh, Y. Nakano, T. Tanemura, University of Tokyo, Bunkyo-ku, TOKYO, JAPAN

Ultra-compact and Polarization-insensitive MMI Coupler Based on Inverse Design (W3B.7)
3:45 PM - 4:00 PM     
We experimentally demonstrate a polarization-insensitive MMI coupler with a footprint of 2.4×2.4 μm2. It allows for >90% transmission efficiency for both TE and TM polarized optical wave with a wavelength range from 1480 ~ 1560 nm.

Authors: Y. Liu, Z. Li, S. Wang, N. Zhang, Y. Yao, Q. Song, K. Xu, Harbin Institute of Technology (Shenzhen, Shenzhen, GUANGDONG, CHINA|J. Du, Z. He, Shanghai Jiao Tong Univ, Shanghai, GUANGDONG, CHINA

High Bandwidth Silicon Photonics Systems (W3E.1)
2:00 PM - 3:00 PM     Tutorial
High Bandwidth Silicon Photonics Systems

Authors: C. Koos, Karlsruhe Institute of Technology KIT, Karlsruhe, GERMANY

A 4×40 Gb/s O-band WDM Silicon Photonic Transmitter based on Micro-Ring Modulators (W3E.2)
3:00 PM - 3:15 PM     
We present an O-band micro-ring-based silicon-photonic 4-channel WDM transmitter with 6.75 nm-channel spacing for high-speed optical interconnects and demonstrate 4×40 Gb/s data generation operation featuring an energy efficiency of 24.84 fJ/bit/RM under 1.82 Vpp drive.

Authors: S. Pitris, M. Moralis-Pegios, T. Alexoudi, N. Pleros, Department of Informatics, Aristotle University of Thessaloniki, Thessaloniki, GREECE|S. Pitris, M. Moralis-Pegios, T. Alexoudi, N. Pleros, Center for Interdisciplinary Research & Innovation, Aristotle University of Thessaloniki, The, GREECE|Y. Ban, P. De Heyn, J. Van Campenhout, imec, Leuven, BELGIUM

A Compact 100G-ER4 ROSA Realized by Hybrid Integration of SOA and Lensed PIN-PDs for QSFP28 Transceivers (W3E.3)
3:15 PM - 3:30 PM     
With hybrid integration of SOA and lensed PIN-PD chips on a silica-based AWG platform, we have developed a novel compact 100G-ER4 ROSA for QSFP28 transceivers with sensitivities below -27 dBm at a BER of 1×10-12.

Authors: Y. Han, D. Lee, J. Shin, S. park, S. Kim, Y. Baek, Electronics & Telecomm Res. Inst, Daejeon, KOREA (THE REPUBLIC OF)|S. Shin, H. Kim, B. Yoon, ARTECH, Seoul, KOREA (THE REPUBLIC OF)

100Gbps CWDM4 Silicon Photonics Transmitter for 5G Applications (W3E.4)
3:30 PM - 3:45 PM     
A 100Gbps CWDM4 silicon photonics transmitter with four heterogeneously integrated distributed feedback lasers on 20 nm wavelength grids has been demonstrated for 5G wireless front-haul applications over a temperature range of -20°C to 95°C

Authors: H. yu, J. Doylend, W. lin, K. Nguyen, W. Liu, D. Gold, A. Dahal, C. Jan, R. Herrick, G. Ghiurcan, S. Hollingsworth, R. Romero, M. Favaro, L. Qiu, D. Zhu, Y. Akulova, Intel, Santa Clara, California, UNITED STATES

A Directly Modulated Quantum Dot Microring Laser Transmitter with Integrated CMOS Driver (W3E.5)
3:45 PM - 4:00 PM     
We demonstrate an integrated heterogeneous quantum-dot laser transmitter directly modulated by a CMOS driver. Utilizing a developed co-simulation laser model enables the design of an asymmetric 2-tap equalizer to achieve a record 12 Gb/s operation.

Authors: Y. Fan, A. Roshan-Zamir, S. Palermo, Texas A&M University, COLLEGE STATION, Texas, UNITED STATES|D. Liang, C. Zhang, B. Wang, M. Fiorentino, R. Beausoleil, Hewlett-Packard Enterprise, Palo Alto, California, UNITED STATES

Enhanced Optical Communications Through Joint Time-Frequency Multiplexing Strategies (W3I.1)
2:00 PM - 2:30 PM     Invited
We demonstrate an ultimate flexible approach for simultaneous OFDM and N-OTDM transmission, using intermediate grids between time and frequency axes. We achieve open eye diagrams, and performance below the FEC limit in an 89.2-km field-trial.

Authors: G. Cincotti, University Roma Tre, Rome, RM, ITALY|T. Konishi, T. Murakawa, T. Nagashima, M. Hasegawa, Graduate School of Engineering, Osaka University, Osaka, RM, JAPAN|S. Shimizu, N. Wada, NICT, Tokyo, RM, JAPAN|K. Hattor, NTT Electronics, Naka-shi,Ibaraki , RM, JAPAN|H. Uenohara, Tokyo Institute of Technology, Midoriku, Yokohama, RM, JAPAN|T. Kodama, Graduate Faculty of Interdisciplinary Research, University of Yamanashi, Kofu, RM, JAPAN

Experimental Generation and Time Multiplexing of Data-Carrying Nyquist Sinc Shaped Channels from a Single Microresonator-based Kerr Frequency Comb (W3I.2)
2:30 PM - 2:45 PM     
We experimentally achieve optical time multiplexing of multiple Nyquist channels. A single microresonator Kerr comb allows the generation of multiple Nyquist sinc-shaped pulse trains. TDM of pulse trains are obtained through wavelength conversion inside a PPLN.

Authors: F. Alishahi, A. Fallahpour, K. Zou, Y. Cao, P. liao, A. Almaiman, H. Zhou, K. Manukyan, A.E. Willner, University of Southern California, Los Angeles, California, UNITED STATES|A. Kordts, M. Karpov, M.H. Pfeiffer, T. Kippenberg, EPFL, Lausanne, California, SWITZERLAND

Low-speed DSP assisted dispersion compensation-free IM/DD optical OFDM transmission over 100 km-SMF using time- and frequency-domain sparse-subcarrier multiplexing (W3I.3)
2:45 PM - 3:00 PM     
Time- and frequency-domain sparse-subcarrier IM/DD optical OFDM system is proposed for dispersion-tolerant transmission. We show a BER improvement for four-subcarrier x 10 Gb/s/subcarrier OFDM, using duo-binary coding and MLSE over 100-km transmission without dispersion compensation.

Authors: T. Kodama, T. Miyazaki, M. Hanawa, University of Yamanashi, Kofu, YAMANASHI, JAPAN|A. Maruta, Osaka universisty, Suita, YAMANASHI, JAPAN|N. Wada, NICT, Koganei, YAMANASHI, JAPAN|G. Cincotti, University Roma Tre, Rome, YAMANASHI, JAPAN

SOI-ring based analog phase processing for chromatic dispersion compensation in A-IFoF Fronthaul (W3I.4)
3:00 PM - 3:15 PM     
We demonstrate a SOI ring-based, analog phase processing method to manage the dispersion induced power fading of DSB IFoF. Experimental results in an IFoF/V-band Fronthaul link, revealed improved EVM performance of 1 Gbaud QPSK signals.

Authors: K. Kanta, P. Toumasis, G. Poulopoulos, N. Iliadis, N. Argyris, G. Giannoulis, D. Apostolopoulos, H. Avramopoulos, ICCS-NTUA, Athens, GREECE

Repetition rate stabilization of a mode-locked laser-PIC optical frequency comb using harmonic injection locking (W3I.5)
3:15 PM - 3:30 PM     
We present an all-optical technique to divide millimeter-Wave range (20-80GHz) optical frequency combs down to microwave regime (10GHz) using harmonic injection locking of a chip-scale MLL achieving a repetition rate stability of 10^-10 a 1s.

Authors: R. Bustos Ramirez, M.E. Plascak, P.J. Delfyett, CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida, UNITED STATES|A. Bhardwaj, G. Hoefler, F.A. Kish, Infinera Corporation, Sunnyvale, California, UNITED STATES

Electrically Programmable Equivalent-Phase-Shifted Waveguide Bragg Grating for Multichannel Signal Processing (W3I.6)
3:30 PM - 3:45 PM     
A silicon-based on-chip electrically programmable equivalent-phase-shifted waveguide Bragg grating implemented through nonuniform spatial sampling to introduce an equivalent phase shift is designed, fabricated and characterized, and its application in multichannel signal processing is experimentally demonstrated.

Authors: J. Yao, W. Zhang, University of Ottawa, Ottawa, Ontario, CANADA

III-V Quantum Dot Lasers Monolithically Grown on Silcion (W4E.1)
4:30 PM - 5:00 PM     Invited
We review the direct growth of III-V quantum dot laser on Si substrates. A low threading dislocation density, on the order of 105cm-2, for III-V epilayer on Si has been achieved.

Authors: H. Liu, University College London, Milton Keynes, UNITED KINGDOM

A Low-noise High-channel-count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si (W4E.2)
5:00 PM - 5:15 PM     
We report a low noise high-channel-count 20 GHz passively mode locked quantum dot laser grown on CMOS compatible silicon substrate. The laser demonstrates a record low timing jitter value of 82.7 fs (4 – 80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz as well as 58 wavelength channels within 3 dB optical bandwidth (80 lines within 10 dB).

Authors: S. Liu, M. Kennedy, J.E. Bowers, Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California, UNITED STATES|D. Jung, Institute for Energy Efficiency, University of California, Santa Barbara, Santa Barbara, California, UNITED STATES|J. Norman, A. Gossard, Materials Department, University of California, Santa Barbara, Santa Barbara, California, UNITED STATES

Coherent and Incoherent Optical Feedback Sensitivity of High-coherence Si/III-V Hybrid Lasers (W4E.3)
5:15 PM - 5:30 PM     
We demonstrate that high-coherence Si/III-V hybrid lasers are much more robust than conventional III-V DFB lasers against both coherent and incoherent optical feedback by examining the frequency noise power spectral density of the lasers.

Authors: Z. Zhang, H. Wang, C.T. Santis, A. Yariv, Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California, UNITED STATES|N. Satyan, G. Rakuljic, Telaris Inc, Santa Monica, California, UNITED STATES|A. Yariv, Department of Electrical Engineering, California Institute of Technology, Pasadena, California, UNITED STATES

Sub-kHz linewidth Extended-DBR lasers heterogeneously integrated on silicon (W4E.4)
5:30 PM - 5:45 PM     
We demonstrate single-mode E-DBR lasers with 1kHz linewidth and >37mW output power, and ring-assisted E-DBR lasers with 500Hz linewidth, by heterogeneously integrating III-V gain material with a 15mm long ultra-low loss silicon waveguide-based Bragg reflector.

Authors: D. Huang, M. Tran, J. Guo, J. Peters, T. Komljenovic, A. Malik, J.E. Bowers, University of California Santa Barbara, Goleta, California, UNITED STATES|P. Morton, Morton Photonics, West Friendship, Maryland, UNITED STATES

High-Performance Hybrid-Integrated Silicon Photonic Tunable Laser (W4E.5)
5:45 PM - 6:00 PM     
We report a silicon photonic tunable laser for coherent communication, with output power reaching 140 mW across the C-band, linewidth narrower than 80 kHz, SMSR larger than 50 dB, and precise gridless frequency tuning.

Authors: Y. Gao, S. Lee, R. Patel, J. Lo, J. Sun, L. Zhu, J. Zhou, J. Hong, NeoPhotonics, San Jose, California, UNITED STATES

III-V/Si PICs based on micro-transfer-printing (W4E.6)
6:00 PM - 6:30 PM     Invited
III-V opto-electronic devices (photodiodes, etched facet lasers) are micro-transfer-printed onto silicon waveguide circuits. An alignment-tolerant interface for evanescently-coupled devices is proposed enabling III-V/Si heterogeneously integrated PICs using micro-transfer-printing.

Authors: G. Roelkens, J. Zhang, G. Muliuk, J. Goyvaerts, B. Haq, C. Op de Beeck, A. Liles, Z. Wang, S. Dhoore, S. Kumari, J. Juvert, D. Van Thourhout, R.F. Baets, INTEC, Ghent University - imec, Ghent, BELGIUM|J. Van Campenhout, B. Kuyken, imec, Leuven, BELGIUM|B. Corbett, Tyndall National Institute, Cork, IRELAND|A. Trindade, C. Bower, X-Celeprint, Cork, IRELAND

Terahertz Photonics - An Overview (Th1C.1)
8:00 AM - 9:00 AM     Tutorial
Free-space communication, with its ever increasing need for higher bandwidth, is pushing the frequency of the carrier wave into the terahertz frequency regime. It has developed into a technology driver for sub-THz devices and systems. An overview will be given of the state-of-the-art of relevant optoelectronic, all-electronic and passive devices of THz photonics, and applications will be described both pertaining to communication but also to other fields such as THz imaging and sensing.

Authors: H.G. Roskos, Physics Department, Goethe-University Frankfurt, Frankfurt am Main, Hesse, GERMANY

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters (Th1C.2)
9:00 AM - 9:15 AM     
A monolithically integrated dual-DFB laser generates a 408 GHz carrier used for demonstrating a record-high single-channel bit rate of 131 Gbit/s transmitted over 10.7 m. 16-QAM-OFDM modulation and specific nonlinear equalization techniques are employed.

Authors: S. Jai, D. Kong, T. Morioka, H. Hu, L.K. Oxenløwe, DTU Fotonik, Lyngby, DENMARK|L. Zhang, O. Ozolins, X. Pang, S. Popov, J. Chen, KTH Royal Institute of Technology, Kista, SWEDEN|M. Lo, G. Carpintero, Universidad Carlos III de Madrid, Madrid, SPAIN|O. Ozolins, A. Udalcovs, NETLAB, Research Institutes of Sweden AB, Kista, SWEDEN|X. Yu, Zhejiang University, Hangzhou, CHINA|S. Xiao, Shanghai Jiao Tong University, Shanghai, CHINA

Photonic generation of dual-band coherent radar signals in S- and X-band (Th1C.3)
9:15 AM - 9:30 AM     
Based on phase-locked dual combs, dual-band coherent radar signals at S- and X-band are generated with large modulation bandwidth and flexible tunability. The system performance is evaluated through measuring the range resolution of two targets.

Authors: Y. Tong, Shanghai Jiao Tong University, Shanghai, ShangHai, CHINA

Broadband and continuous beamformer based on switched delay lines cascaded by optical ring resonator (Th1C.4)
9:30 AM - 9:45 AM     
A beamforming chip is realized on indium phosphide (InP) employing cascaded optical ring resonators and switched delay lines for wide bandwidth applications. 6.7 Gbps transmission in the K-band (17-22 GHz) is achieved up to 23.1 ps steering on a 4 GHz-wide OFDM signal.

Authors: A. Trinidad, Z. Cao, J. van Zantvoort, E. Tangdiongga, T. Koonen, Technical University of Eindhoven, Eindhoven, NETHERLANDS

93-GHz Signal Beam Steering with True Time Delayed Integrated Optical Beamforming Network (Th1C.5)
9:45 AM - 10:00 AM     
A 93-GHz beam steering experiment based on a 1x4 phased array antenna was demonstrated, achieving beam steering angles of −51o, ±34o ,±17o and 0o. An integrated optical beamforming network chip with true time delays was employed.

Authors: Y. Liu, B. Isaac, J. Klamkin, University of California Santa Barbara, Goleta, California, UNITED STATES|J. Kalkavage, E. Adles, T. Clark, The Johns Hopkins University Applied Physics Laboratory, Laurel, Maryland, UNITED STATES

Large Scale Silicon Photonics Switches Based on MEMS Technology (Th1E.1)
8:00 AM - 8:30 AM     Invited
We review the recent developments in large-scale silicon photonic switches, focusing on MEMS-based switches that enables high port-count (128x128), low optical loss (0.05 dB/port), low crosstalk, broadband operation, sub-microsecond response time, and low power consumption.

Authors: M.C. Wu, T. Seok, K. Kwon, J. Henriksson, J. Luo, University of California Berkeley, Berkeley, California, UNITED STATES|T. Seok, Gwangju Institute of Science and Technology, Gwangju, California, KOREA (THE REPUBLIC OF)

Polarization-diversity 32 × 32 Si Photonics Switch with Non-duplicate Diversity Circuit in Double-Layer Platform (Th1E.2)
8:30 AM - 8:45 AM     
We demonstrate a polarization-diversity 32×32 Si-photonics switch by newly introducing a SiN overpass circuit onto our non-duplicate polarization-diversity path-independent insertion-loss switch circuit. An average PDL in a sampled connection setting was evaluated as 3.2 dB.

Authors: K. Suzuki, R. Konoike, N. Yokoyama, M. Seki, M. Ohtsuka, S. Saitoh, S. Suda, H. Matsuura, K. Yamada, S. Namiki, H. Kawashima, K. Ikeda, Natl Inst of Adv Industrial Sci & Tech, Tsukuba, IBARAKI, JAPAN

Integrated Reconfigurable 4×4 Optical Unitary Converter Using Multiport Directional Couplers (Th1E.3)
8:45 AM - 9:00 AM     
We demonstrate novel silicon photonic 4×4 reconfigurable optical unitary converter, comprising multiport directional couplers and phase shifter arrays. By optimizing the phase shift with simulated annealing algorithm, reconfigurable mode sorting and switching are experimentally realized.

Authors: R. Tanomura, R. Tang, S. Ghosh, T. Tanemura, Y. Nakano, the University of Tokyo, Bunkyo-ku, TOKYO, JAPAN

Recent Developments in High Radix Optical Switching (Th1E.4)
9:00 AM - 9:30 AM     Invited
Low loss all-optical circuit switches enable network automation directly at the fiber layer. We review recent advances in free-space beam-steering technology and examine the prospects and challenges presented in scaling beyond 384x384 non-blocking fiber ports.

Authors: N.J. Parsons, HUBER+SUHNER Polatis, Inc, Cambridge, UNITED KINGDOM

240x240 Wafer-scale Silicon Photonic Switches (Th1E.5)
9:30 AM - 9:45 AM     
We report on 240x240 silicon photonic MEMS switches on 4cm x 4cm dies realized by wafer-scale integration and reticle stitching. The maximum on-chip loss is measured to be 9.8dB and the crosstalk is below -70dB.

Authors: T. Seok, Gwangju Institute of Science and Technology, Gwangju, KOREA (THE REPUBLIC OF)|T. Seok, K. Kwon, J. Henriksson, J. Luo, M.C. Wu, University of California, Berkeley, Berkeley, California, UNITED STATES

LCoS-based Photonic Crossconnect (Th1E.6)
9:45 AM - 10:00 AM     
We demonstrate a 16 x 16 photonic crossconnect using LCoS steering, with an average insertion loss of 4 dB, which allows alignment error to be corrected and demonstrates power splitting for increased network functionality.

Authors: H. Chen, N.K. Fontaine, R. ryf, D.T. Neilson, Nokia Bell Labs, Holmdel, New Jersey, UNITED STATES

Workshop - High Noon: Silicon Photonics vs. Rest of the World
3 March, 1:00 PM - 3:30 PM     
It is commonly recognized that Si-photonics has evolved from being a research subject to a real fabrication platform. Although some Si-based transceivers are already commercialized, discussions still continue on whether the platform is competitive in other application areas which are still dominated by other technologies. 

This workshop aims to discuss how well the silicon photonics platform can penetrate into various areas of optical communications. It will be held in the form of team competitions in which a silicon photonics team will be opposed by an alternative technology team, making the case for III-V, dielectric waveguide, or free-space/micro optics to realize the same target devices:


  • Transceivers
  • Optical filters
  • Optical switches

Next-Generation Coherent Architectures – Pluggable vs Multi-haul, a Knockout or a Draw?
3 March, 1:30 PM - 2:30 PM     
Coherent architectures have trended toward increasing adoption of pluggable modules but margin stacking is creating competitive pressure, particularly in higher growth, edge coherent applications. Meanwhile, the latest generation of high-speed optics and DSPs with flexible transmission capabilities are offering solutions that support multi-haul applications ranging from high capacity edge DCI to submarine but fear of vendor lock-in concerns webscale providers. Panelists will discuss the synergies and trade-offs between these architectures and consider how they may evolve in future generations.

Workshop - Which One Will Succeed in Data Center Applications, Multi-chip or Monolithic Integrated Optoelectronic Chip?
3 March, 4:00 PM - 6:30 PM     
Coherent DSP chips will soon be able to process 100-Gbaud signals. Switch ASICs capacity is scaling to tens of Terabit with a channel rate >100 Gb/s. Proximity integration of DSP/ASIC chips and optical chips are highly demanded in these high-speed and high-capacity applications. On-board optics and optics in packaging with ICs are expected to address this challenge. Silicon photonic technology allows monolithic integration of analog/digital ICs with photonic circuits. However, 2.5D and 3D integration approach based on multiple chips or separate IC and PICs is another feasible technique. This workshop will emphasize on how to integrate photonic chips with electronic ICs for very high baud rate and large capacity. Pros and cons for monolithic or multi-chip integration approaches will be discussed. Advanced packaging techniques such as optics in packaging and on-board optics will be also focused.

Panel - PIC Foundry Commercial Access: Prospects and Challenges
6 March, 8:00 AM - 10:00 AM     

The generic foundry approach leads to a revolution in micro and nanophotonics, just as it did in microelectronics thirty years ago. Generic integration leads to a drastic reduction in the entry costs for developing Photonic Integrated Circuits. Integrated circuits using  generic integration open up a whole new range of applications including data communications, fiber-to-the-home, fiber sensors, gas sensing, medical diagnostics, metrology and consumer photonics. Present prospects and challenges of Silicon and InP-based photonic foundry technology are being addressed.

Sponsored by: