The Optical Networking and Communication
Conference & Exhibition

San Diego Convention Center,
San Diego, California, USA

Device Challenges for 100G and Beyond


Session Title Sunday, 3 March Monday, 4 March Tuesday, 5 March Wednesday, 6 March Thursday, 7 March
Workshop - What is a Real Killer Application of SDM, Telecom or Non-Telecom?

1:00 PM - 3:30 PM

Workshop - Opportunities and Challenges for Optical Switching in the Data Center 1:00 PM - 3:30 PM    
Workshop - Super DACs and ADCs - To Interleave or not to Interleave
4:00 PM - 6:30 PM        

Symposia: Future Photonics Devices and Materials for Optical Communications 2 (M2D)


10:30 AM - 12:30 PM


Ultra-high Speed Devices (M2F)


10:30 AM - 12:15 PM


Symposia: Future Photonics Devices and Materials for Optical Communications 3 (M3D)


2:00 PM - 4:00 PM


Ligo and Lidar (M4E)


4:30 PM - 6:30 PM


Silicon Modulator (Tu2H)


2:00 PM - 4:00 PM


Filters and Couplers (Tu2J)


2:00 PM - 4:00 PM


Laser Driving and VCSELS (Tu3A)


4:30 PM - 6:15 PM


Photonic Integrated Circuits and Novel Technology (Tu3E)


4:30 PM - 6:30 PM

Panel - Space Photonics: Disruptive Satellite Laser Communications and Astrophotonics     4:30 PM - 6:30 PM    
Panel - SDM Technology Solutions for Next Generation Submarine Transmission       8:00 AM - 10:00 AM   

Silicon Photonics Switch (W1E)


8:00 AM - 9:45 AM


III-IV Lasers (W3A)


2:00 PM - 4:00 PM


Novel Device Design (W3B)


2:00 PM - 4:00 PM


Lasers on Si (W4E)


4:30 PM - 6:30 PM


Terahertz/mmWave photonics (Th1C)


8:00 AM - 10:00 AM

Large-scale Optical Switch (Th1E)


8:00 AM - 10:00 AM

Detectors (Th3B)


2:00 PM - 4:00 PM

SDM Devices (Th3D)


2:00 PM - 4:00 PM

Tunable Metasurfaces (M1D.1)
8:00 AM - 8:30 AM     Invited
Tunable Metasurfaces

Authors: H. Atwater, California Institute of Technology, Pasadena, California, UNITED STATES|

Topologically protected silicon quantum circuits (M1D.2)
8:30 AM - 9:00 AM     Invited
We report experiments showing robustness of correlated and entangled biphoton states generated and guided in silicon quantum circuits with non-trivial topology. These results open new avenues to develop robust quantum qubits for quantum information systems.

Authors: A. Blanco-Redondo, University of Sydney, Sydney, New South Wales, AUSTRALIA|

Integrated Phase-change Photonics: A Strategy for Merging Communication and Computing Technologies (M1D.3)
9:00 AM - 9:30 AM     Invited
We can do much more with light than simply communicate; we can store and process data, and even make computers that operate in a brain-like fashion. We demonstrate such possibilities, using integrated phase-change photonic platform.

Authors: D. Wright, S. Carrillo, E. Gemo, A. Baldycheva, University of Exeter, Exeter, UNITED KINGDOM|H. Bhaskaran, Z. Cheng, X. Li, C. Rios, N. Youngblood, University of Oxford, Oxford, UNITED KINGDOM|W. Pernice, J. Feldmann, N. Gruhler, M. Stegmaier, University of Muenster, Muenster, GERMANY|C. Rios, MIT, Cambridge, Massachusetts, UNITED STATES|

Silicon-chip-based Brillouin Lasers and Soliton Microcombs Using an Integrated Ultra-high-Q Silica Resonator (M1D.4)
9:30 AM - 10:00 AM     Invited
A monolithic ultra-high-Q silica resonator featuring an integrated silicon-nitride waveguide is described. The resonator can be configured for either high-coherence Brillouin laser action or stable microwave-rate mode locking over C-band at low pumping power.

Authors: K.J. Vahala, S. Lee, Q. Yang, B. Shen, H. Wang, California Institute of Technology, Pasadena, California, UNITED STATES|D. Oh, Rockley Photonics, Pasadena, California, UNITED STATES|K. Yang, Stanford University, Stanford, California, UNITED STATES|X. Yi, University of Virginia, Charlottesville, California, UNITED STATES|

Transfer Printing for Heterogeneous Integration (M2D.1)
10:30 AM - 11:00 AM     Invited
Transfer-printing provides a highly versatile methodology to heterogeneously and intimately integrate diverse photonic and electronic components in close proximity onto silicon photonics platforms. This technique can enable a manufacturing route to powerful photonic integrated circuits.

Authors: B. Corbett, R. Loi, J. O'Callaghan, L. Liu, K. Thomas, A. Gocalinska, E. Pelucchi, B. Roycroft, Tyndall National Institute, Cork, IRELAND|A. Trindade, C. Bower, X-Celeprint Limited, Cork, IRELAND|G. Roelkens, Ghent iniversity, imec, Ghent, BELGIUM|

3D Printing in Photonic Integration (M2D.2)
11:00 AM - 11:30 AM     Invited
3D Printing in Photonic Integration

Authors: P. Dietrich, Karlsruhe Institute of Technology, Karlsruhe, GERMANY|

Silicon Photonic MEMS: Exploiting Mechanics at the Nanoscale to Enhance Photonic Integrated Circuits (M2D.3)
11:30 AM - 12:00 PM     Invited
In this paper, we will discuss recent achievements in the development of MEMS enabled systems in Silicon Photonics and outline the roadmap towards reconfigurable general Photonic Integrated Circuits.

Authors: N. Quack, H. Sattari, A. Takabayashi, Y. Zhang, EPFL, Lausanne, SWITZERLAND|P. Edinger, C. Errando Herranz, K. Gylfason, X. Wang, F. Niklaus, KTH Royal Institute of Technology, Stockholm, SWEDEN|M. Jezzini, H. Hwang, P.A. O'Brien, Tyndall National Institute, Cork City, IRELAND|M.A. Porcel, VLC Photonics, Valencia, SPAIN|C. Lerma Arce, Commscope, Hickory, North Carolina, UNITED STATES|S. Kumar, W. Bogaerts, University of Ghent, Gent, North Carolina, BELGIUM|B. Abasahl, P. Verheyen, IMEC, Leuven, North Carolina, BELGIUM|

IMOS: Indium-phosphide Membrane on Silicon (M2D.4)
12:00 PM - 12:30 PM     Invited
IMOS: Indium-phosphide Membrane on Silicon

Authors: K. Williams, TU Eindhoven, Eindhoven, NETHERLANDS|

Ultra High-Speed Quantum-Well Semiconductor Lasers (M2F.1)
10:30 AM - 11:30 AM     Tutorial
Evolution of ultra high-speed quantum-well semiconductor lasers with breakthrough technology for data-center and 5G-wireless are fully reviewed from pioneer research up to 100GbE/400GbE application, including challenge and advanced approaches for 800GbE and beyond.

Authors: K. Uomi, Lumentum, Kanagawa, JAPAN|

Ultra-High Bandwidth InP IQ Modulator for beyond 100-GBd Transmission (M2F.2)
11:30 AM - 12:00 PM     Invited
We present an ultra-high bandwidth IQ modulator with an electro-optic bandwidth of around 80 GHz at a half-wave voltage of 1.5 V, which is a promising modulator for beyond 100-GBd transmission.

Authors: Y. Ogiso, J. Ozaki, Y. Ueda, S. Kanazawa, Y. Hashizume, H. Tanobe, N. Nunoya, M. Ishikawa, NTT Device Innovation Center, Atsugi, KANAGAWA, JAPAN|H. Wakita, M. Nagatani, H. Yamazaki, T. Fujii, M. Ida, NTT Device Technology Laboratories, Atsugi, KANAGAWA, JAPAN|M. Nakamura, T. Kobayashi, Y. Miyamoto, NTT Network Innovation Laboratories, Yokosuka, KANAGAWA, JAPAN|

Dual-drive Plasmonic Transmitter with Co-designed Driver Electronics Operated at 120 GBd On-off Keying (M2F.3)
12:00 PM - 12:15 PM     
A plasmonic dual-drive transmitter with co-designed driver electronics featuring 120 GBd on-off keying, with a single ended drive voltage of 450mV and BER performance of 5x10^-7 is demonstrated in a 500m direct detection transmission scheme.

Authors: B. Baeuerle, W. Heni, Y. Fedoryshyn, C. Hoessbacher, U. Koch, A. Josten, T. Watanabe, J. Leuthold, ETH Zurich, Zurich, SWITZERLAND|C. Uhl, M. Möller, Chair of Electronics and Circuits, Saarland University, Saarbrücken, GERMANY|H. Hettrich, M. Möller, MICRAM Microelectronics GmbH, Bochum, GERMANY|D. Elder, L. Dalton, Department of Chemistry, University of Washington, Seattle, Washington, UNITED STATES|

Quantum Si Ph (M3D.1)
2:00 PM - 2:30 PM     Invited
Quantum Si Ph

Authors: D. Englund, MIT, Cambridge, Massachusetts, UNITED STATES|

Integrated LiNbO3 Photonics and Applications (M3D.2)
2:30 PM - 3:00 PM     Invited
I will present our integrated LiNbO3 nanophotonics platform, featuring sub-wavelength scale light confinement and dense integration of optical and electrical components. Examples include integrated LN electro-optic modulators that can be driven directly by a CMOS circuitry, and electro-optic and Kerr frequency combs.

Authors: M. Loncar, Harvard University, Cambridge, Massachusetts, UNITED STATES|

Graphene Photonics for Optical Communications (M3D.3)
3:00 PM - 3:30 PM     Invited
Graphene is a post-processed single platform compliant with silicon photonics or other platforms based on passive waveguides. Results on high speed optical modulators on both SOI and SiN and large bandwidth detectors will be shown.

Authors: M. Romagnoli, Photonic Networks and Technologies Lab, CNIT, Pisa, ITALY|

Long-term Stable Electro-optic Polymers for Hybrid Integration (M3D.4)
3:30 PM - 4:00 PM     Invited
The high-temperature-resistant electro-optic polymer is used to demonstrate 100 Gbit/s OOK and 112 Gbit/s PAM4 modulations. The polymer is performed on the silicon Mach-Zehnder interferometer toward possible hybrid silicon and polymer photonic platform.

Authors: S. Yokoyama, G. Lu, X. Cheng, F. Qiu, Kyushu University, Kasuga, Fukuoka, JAPAN|

The Basics of How the Advanced LIGO Detector Works (M4E.1)
4:30 PM - 5:30 PM     Tutorial
This tutorial will cover the basics physics and engineering of how the Advanced LIGO interferometers work. It will include a discussion of some of the decisions made and will highlight several of the lesser known subsystems.

Authors: S.E. Whitcomb, E. Gustafson, LIGO Laboratory, California Institute of Technology, Pasadena, California, UNITED STATES|

Large-scale silicon photonic phased array chip for single-pixel ghost imaging (M4E.2)
5:30 PM - 5:45 PM     
We develop large-scale optical phased array (OPA) with 128 phase shifters integrated on a compact silicon chip for single-pixel ghost imaging application. By using speckle illumination pattern generated from OPA, calibration-free robust imaging is demonstrated.

Authors: Y. Kohno, K. Komatsu, Y. Ozeki, Y. Nakano, T. Tanemura, The University of Tokyo, Tokyo, JAPAN|

MWIR Solid-State Optical Phased Array Beam Steering using Germanium-Silicon Photonic Platform (M4E.3)
5:45 PM - 6:00 PM     
We demonstrate a chip-scale germanium-silicon optical phased array fabricated on a Bi-CMOS compatible platform capable of beam steering in the mid-infrared wavelength. We achieved beam steering angle up to 12.7° with beam divergence of 0.47°×2.86°.

Authors: M. Prost, Y. Ling, S. Cakmakyapan, Y. Zhang, K. Zhang, J. Hu, Y. Zhang, S. Yoo, University of California, Davis, Davis, California, UNITED STATES|

Two-Dimensional Beam Steering Device Based on VCSEL Slow-Light Waveguide Array with Amplifier Function (M4E.4)
6:00 PM - 6:15 PM     
We demonstrated two-dimensional beam steering by using VCSEL-based slow-light waveguide array with large angular dispersion of 1.8°/nm, which showed potential to achieve resolution point of over 10,000 dots. We obtained chip gain of 18.4 dB.

Authors: K. Kondo, X. Gu, Z. Ho, F. Koyama, FIRST, Tokyo Institute of Technology, Yokohama, Kanagawa, JAPAN|A. Matsutani, Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, Yokohama, Kanagawa, JAPAN|

Serpentine Optical Phased Array Silicon Photonic Aperture Tile with Two-Dimensional Wavelength Beam Steering (M4E.5)
6:15 PM - 6:30 PM     
We propose and demonstrate a passive microphotonic phased-array aperture that wavelength-steers a beam in 2-D, showing 14,000 resolvable spots. It is tileable into larger apertures with fill factor above 50%, an improvement of 16x over previous work.

Authors: B. Zhang, A. Khilo, K. Al’Qubaisi, D. Onural, M. Popovic, Boston University, Boston, Massachusetts, UNITED STATES|N. Dostart, M. Brand, D. Feldkhun, M. Popovic, K. Wagner, University of Colorado, Boulder, Boulder, Colorado, UNITED STATES|

Silicon Photonic Modulators for High-Capacity Coherent Transmissions (Tu2H.1)
2:00 PM - 2:30 PM     Invited
We discuss system-orientated design and optimization of all-silicon modulators for high-baud-rate (up to 84GBaud) coherent transmissions. We achieved single-carrier net-600Gb/s DP-32QAM, net-400Gb/s DP-16QAM over 1520km; and 800Gb/s super-channel using a silicon-modulator optical frequency comb.

Authors: W. Shi, J. Lin, H. Sepehrian, S. Zhalehpour, L. Rusch, Department of Electrical and Computer Engineering & Center for Optics, Photonics, and Lasers (COPL), Université Laval, Quebec, Quebec, CANADA|J. Lin, H. Sepehrian, Z. Zhang, Huawei Technologies Canada Co., Ltd., Ottawa, Ontario, CANADA|

Silicon Photonics Carrier Depletion Modulators Capable of 85Gbaud 16QAM and 64Gbaud 64QAM (Tu2H.2)
2:30 PM - 2:45 PM     
We achieved high performance silicon photonics carrier-depletion Mach-Zehnder modulation with a commercial foundry by optimizing doping and device design. We demonstrated IQ modulator operating at 85Gbaud 16QAM and 64Gbaud 64 QAM with >25dB extinction ratio.

Authors: J. Zhou, J. Wang, L. Zhu, Q. Zhang, J. Hong, NeoPhotonics, San Jose, California, UNITED STATES|Q. Zhang, ECET Department, Minnesota State University, Mankato, Minnesota, UNITED STATES|

SiPh Self-coherent Transmitter Circuit with on-chip CSPR Control Capability based on a Tunable Power Splitter (Tu2H.3)
2:45 PM - 3:00 PM     
We present a novel CSPR controllable silicon photonic transmitter circuit based on a tunable power splitter for VSB self-coherent transmissions. 112 Gb/s 16 QAM over 80 km at a BER below 3.8×10-3 has been achieved.

Authors: Z. Xing, D. Patel, E. Elfiky, M. XIANG, R. Li, M. Saber, L. Xu, M. Hui, D. Plant, McGill University, Montreal, Quebec, CANADA|

Sub-fJ/bit Operation of 100 GBd Plasmonic IQ Modulators (Tu2H.4)
3:00 PM - 3:15 PM     
A 100 GBd QPSK (200 Gbit/s) plasmonic IQ modulator operating with sub-1V drive voltages and low 0.6 fJ/bit electrical energy consumption is shown. Furthermore, 100 GBd 16QAM (400 Gbit/s) operation with 2 fJ/bit is demonstrated.

Authors: D. Elder, L. Dalton, Department of Chemistry, University of Washington, Seattle, Washington, UNITED STATES|W. Heni, Y. Fedoryshyn, B. Baeuerle, A. Josten, C. Hoessbacher, A. Messner, C. Haffner, Y. Salamin, U. Koch, T. Watanabe, J. Leuthold, Institute of Electromagnetic Fields (IEF), ETH Zurich, Zurich, Washington, SWITZERLAND|

110 Gbit/s On-Off Keying Transmitter Based on a Single-Drive Polymer Modulator (Tu2H.5)
3:15 PM - 3:30 PM     
We demonstrate a 110Gbit/s OOK transmission using a hybrid silicon and polymer EO modulator with BER below FEC threshold. It has high thermal-stability, >100G operation bandwidth, 3.5dB extinction ratio and low driving-voltages of 3.5V.

Authors: S. Yokoyama, G. Lu, X. Cheng, F. Qiu, A. Spring, Kyushu University, Kasuga, Fukuoka, JAPAN|G. Lu, Tokai University, Kanagawa, Fukuoka, JAPAN|

Integrable Thin Film Lithium Niobate (TFLN™) on Silicon Electro-optic Modulators (Tu2H.6)
3:30 PM - 3:45 PM     
A thin film lithium niobate on silicon modulator is demonstrated with 2.5V Vpi, 50 GHz bandwidth, and < 0.5 dB/cm loss. An optimized design features < 5mm length, < 2V Vpi and 60 GHz bandwidth.

Authors: V. Stenger, A. Pollick, C. Acampado, SRICO, Inc, Columbus, Ohio, UNITED STATES|

Characterizations of Semiconductor Optical Amplifiers for 64Gbaud 16-64QAM Coherent Optical Transceivers (Tu2H.7)
3:45 PM - 4:00 PM     
We demonstrated semiconductor optical amplifiers capable of operating at 64Gbaud for 16-64QAM modulation with large dynamic ranges. The full characterizations of SOA as transmitter booster and receiver pre-amplifier for 400Gb/s to 600Gb/s applications were reported.

Authors: J. Zhou, L. Zhu, D. Wong, H. Wang, M. Boudreau, J. Sun, J. Huang, P. Wang, G. Ji, J. Hong, NeoPhotonics, San Jose, California, UNITED STATES|

Integrated-photonic Tunable Demultiplexer for Variable Channel Number Optical OFDM Signals (Tu2J.1)
2:00 PM - 2:15 PM     
We report a tunable OFDM demultiplexer whose major element is a star coupler-based optical DFT circuit. Variable channel number 20 to 100 Gsymbol/s OFDM signals were demultiplexed by selecting delay lines into the star coupler.

Authors: K. Takiguchi, H. Masaki, T. Taguchi, Ritsumeikan University, Kusatsu, Shiga, JAPAN|

Low-loss and Fabrication-tolerant Si Four-wavelength Multiplexer Using Higher-order Mode for 100/400GbE (Tu2J.2)
2:15 PM - 2:30 PM     
A Si four-wavelength multiplexer for 100/400GbE composed of (a)symmetric directional couplers and a rib-waveguide mode-converter is experimentally demonstrated. Proposed device is fabrication-tolerant due to the removal of 1600-GHz filter used in conventional two-stage Mach-Zehnder multiplexers.

Authors: J. Takano, T. Fujisawa, T. Sato, Y. Sawada, K. Saitoh, Hokkaido University, Sapporo, Hokkaido, JAPAN|T. Sakamoto, T. Matsui, K. Tsujikawa, K. Nakajima, NTT Access Network Service Systems Laboratories, Tsukuba, Ibaraki, JAPAN|

Tunable Filters in the Evolving Optical Communication Network (Tu2J.3)
2:30 PM - 3:00 PM     Invited
Tunable optical filters are a key enabler of flexible, high density and high bandwidth optical communication systems. We describe the evolution of fundamental technologies and applications for tunable optical filters in dynamic, reconfigurable networks.

Authors: G.D. Bartolini, M.J. Cahill, II-VI Photonics, Woburn, Massachusetts, UNITED STATES|

Broadband-tunable Cascaded Vernier Silicon Photonic Microring Filter with Temperature Tracking (Tu2J.4)
3:00 PM - 3:15 PM     
We report a 4th-order Vernier silicon microring filter consisting of two cascaded stages with 32 nm tuning range and better than 30 dB isolation. On-chip thermistors allow device temperature to be tracked with ±0.1°C accuracy.

Authors: Y. Ren, D. Perron, F. Aurangozeb, M. Hossain, V. Van, University of Alberta, Edmonton, Alberta, CANADA|Z. Jiang, HUAWEI Canada Research Centre, Kanata, Ontario, CANADA|

Efficient Optical I/O in Standard Silicon Photonics Process (Tu2J.5)
3:15 PM - 3:30 PM     
We demonstrate grating coupler based, efficient optical I/Os for silicon pho- tonic(SiPh) chip-to-fiber and chip-to-chip applications. Standard single-mode fiber(SSMF)- to-chip interface experimentally shows coupling efficiency of -1.3dB. The reported I/Os are fabricated in standard SiPh process.

Authors: A. Melikyan, T. Hu, K. Kim, Y. Baeyens, M. Earnshaw, P. Dong, Nokia/Bell Labs, Holmdel, New Jersey, UNITED STATES|

Trident Shape SOI Metamaterial Fiber-to-chip Edge Coupler (Tu2J.6)
3:30 PM - 3:45 PM     
We propose a fiber-to-chip edge coupler based on trident-shaped dielectric metamaterial. Experiment shows < 2 dB/facet coupling loss with high NA fiber and near 0.5 dB/facet coupling loss using lensed fiber at the best polarization.

Authors: M. TENG, B. Niu, K. Han, S. Kim, Y. Xuan, Y. Lee, M. Qi, Purdue University, West Lafayette, Indiana, UNITED STATES|

Broadband and Polarization Insensitive Surface Optical Coupler Using Vertically Curved Waveguides Fabricated with ArF-immersion Lithography (Tu2J.7)
3:45 PM - 4:00 PM     
Vertically-curved Si waveguide using 45nm-node ArF-immersion lithography and ion implantation bending method showed <2.5dB minimum coupling loss, >130nm/0.5dB spectrum bandwidth for 5µm-MFD fiber coupling in both TE- and TM-polarization with very small polarization dependence.

Authors: T. Yoshida, Y. Atsumi, E. Omoda, Y. Sakakibara, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, JAPAN|

High Capacity VCSEL Links (Tu3A.1)
4:30 PM - 5:00 PM     Invited
Recent advances and remaining challenges for high capacity VCSEL based links are reviewed. A path to 800Gbps and greater single fiber links is described

Authors: S.E. Ralph, School of ECE, Georgia Institute of Technology, Atlanta, Georgia, UNITED STATES|

A 50Gb/s PAM-4 Retimer-CDR + VCSEL Driver with Asymmetric Pulsed Pre-Emphasis Integrated into a Single CMOS Die (Tu3A.2)
5:00 PM - 5:15 PM     
A 50 Gb/s PAM-4 Retimer-CDR + VCSEL driver is fully-integrated in a 40nm CMOS process. Measurement results demonstrate wide optical eye openings using a 16GHz bandwidth VCSEL, achieving > 4 dB extinction ratio and < 8 pJ/bit energy efficiency.

Authors: S. Hu, T. Yao, B. Yin, L. Zhao, C. Song, P. Chiang, Fudan University, Shanghai, ShangHai, CHINA|N. Qi, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ShangHai, CHINA|

VCSEL with Bi-layer Oxidized Aperture Enables 140-Gbit/s OFDM Transmission over 100-m-long OM5 MMF (Tu3A.3)
5:15 PM - 5:30 PM     
A few-mode 850-nm VCSEL chip directly modulated by 16-QAM OFDM data at 140 Gbit/s is demonstrated to enable error-free transmission over 100-m-long OM5 MMF with 3.1-dB power penalty compared to the back-to-back case.

Authors: W. Wu, C. Huang, H. Wang, Y. Lin, C. Wu, G. Lin, Graduate Institute of Photonics and Optoelectronics, and Department of Electrical Engineering National Taiwan University, Taipei, TAIWAN|W. Wu, C. Huang, H. Wang, Y. Lin, G. Lin, NTU-Tektronix Joint Research Center, National Taiwan University and Tektronix Inc., Taipei, TAIWAN|C. Wu, Graduate Institute of Electronics Engineering, and Department of Electrical Engineering, Taipei, TAIWAN|H. Kuo, Department of Photonics, National Chiao-Tung University, Hsinchu, TAIWAN|W. Cheng, Graduate Institute of Optoelectronic Engineering, Department of Electrical Engineering, National Chung Hsing University, Taichung, TAIWAN|M. Feng, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana-Champaign, Illinois, UNITED STATES|

Tunable Laser Drivers for Next Generation WDM-Based PON Networks (Tu3A.4)
5:30 PM - 6:00 PM     Invited
This paper reviews the tunable lasers and their driving circuits to address challenges of the biasing and wavelength excursion reduction for next generation TWDM-PON systems, including NG-PON2 and the recent Super-PON effort in IEEE802.3.

Authors: T. Zhang, Google, Mountain View, California, UNITED STATES|

53-Gbaud PAM4 Differential Drive of a Conventional EA/DFB toward Driver-amplifier-less Optical Transceiver (Tu3A.5)
6:00 PM - 6:15 PM     
53-Gbaud-PAM4 differential drive of a conventional EA/DFB was demonstrated. Almost the same waveform as single-ended drive was confirmed with outer ER of 4.1 dB and TDECQ of 1.63 dB by differential drive with 0.57 Vpp/lane.

Authors: K. Adachi, T. Fukui, M. Shishikura, A. Nakanishi, A. Nakamura, T. Suzuki, S. Tanaka, Lumentum, Kanagawa, JAPAN|

Realities and Challenges of III-V/Si Integration Technologies (Tu3E.1)
4:30 PM - 5:00 PM     Invited
The complexity of photonic integrated circuits has progressed rapidly, but serious problems remain to be solved to enable widespread application in Tbps transceivers and optical scanners. A summary of progress, problems and potential solutions is provided.

Authors: J.E. Bowers, D. Huang, D. Jung, J. Norman, M. Tran, Y. wan, W. xie, University of California Santa Barbara, Santa Barbara, California, UNITED STATES|

Fully Integrated Stokes Vector Receiver for 400 Gbit/s (Tu3E.2)
5:00 PM - 5:15 PM     
We propose and demonstrate a new photonic integrated circuit (PIC) design for Stokes vector reception. Its accuracy is 2.5° across the entire Poincaré sphere and almost than the entire C-band.

Authors: M. Baier, F. Soares, A. Schoenau, Y. Gupta, D. Melzer, M. Schell, Fraunhofer HHI, Berlin, GERMANY|

Demonstration of Ge/Si Avalanche Photodetector Arrays for Lidar Application (Tu3E.3)
5:15 PM - 5:30 PM     
We report Ge-on-Si APD arrays with up to 10-by-10 pixels at 1550nm. Our demonstration reveals highly uniform responsivity of ~3.3 A/W with <7% variation. The bandwidth is 9GHz and 0.7GHz for single and 10×10 array.

Authors: Y. Li, X. Luo, G. Liang, G. Lo, Advanced Micro foundry Pte. Ltd., Singapore, SINGAPORE|Y. Li, Institute of Microelectronics, ASTAR, Singapore, SINGAPORE|

Computationally-optimized Ultra-Compact Nanophotonics (Tu3E.4)
5:30 PM - 6:00 PM     Invited
Computational techniques, such as nonlinear optimization, when guided by manufacturing constraints, can result in highly practical, robust, CMOS-compatible, ultra-compact (on the order of the wavelength) and multi-functional integrated- photonics components.

Authors: R. Menon, University of Utah, Del Mar, California, UNITED STATES|

Large-Scale Monolithic Optical Phased Arrays (Tu3E.5)
6:00 PM - 6:30 PM     Invited
This paper covers architectures, devices, recent advancements, and selected remaining challenges towards large-scale monolithic optical phased arrays with emphasis on silicon process.

Authors: H. Hashemi, University of Southern California, Los Angeles, California, UNITED STATES|

Electrically driven photonic integrated soliton microcomb (W1C.1)
8:00 AM - 8:15 AM     
We demonstrate via self-injection locking an electrically driven soliton microcomb by coupling a multi-frequency laser diode to a chip-scale high-Q Si3N4 microresonator. This approach offers a pathway for an integrated and ultra-compact microcomb source for high-volume applications e.g. coherent telecommunication and data-center interconnects.

Authors: A. Raja, H. Guo, J. Liu, M. Karpov, E. Lucas, J.D. Jost, T. Kippenberg, École Polytechnique Fédérale de Lausanne, Lausanne, 1015 , SWITZERLAND|A.S. Voloshin, S.E. Agafonova, A.S. Gorodnitsky, N.G. Pavlov, R.R. Galiev, A.E. Shitikov, M.L. Gorodetsky, Russian Quantum Center, Moscow, 143025, RUSSIAN FEDERATION|S.E. Agafonova, A.S. Gorodnitsky, N.G. Pavlov, Moscow Institute of Physics and Technology,, Moscow, 141700, RUSSIAN FEDERATION|R.R. Galiev, A.E. Shitikov, M.L. Gorodetsky, Faculty of Physics, M.V. Lomonosov Moscow State University, Moscow, 119991, RUSSIAN FEDERATION|J.D. Jost, MicroR Systems Sarl, Lausanne, 1003, SWITZERLAND|

Ultralow-power chip-based soliton microcombs for photonic integration (W1C.2)
8:15 AM - 8:30 AM     
Using the photonic Damascene reflow process, we present single soliton formation in 99-GHz-FSR silicon nitride microresonators of Q-factor exceeding 15 million, with less than 10 mW optical power.

Authors: J. Liu, A. Raja, M. Karpov, N. Engelsen, H. Guo, T. Kippenberg, A. Lukashchuk, Ecole Polytechnique Federale de Lausanne, Lausanne, SWITZERLAND|

New Insights on Modulation Instability in Optical Fibers (W1C.3)
8:30 AM - 9:00 AM     Invited
We provide the first longitudinal characterization in phase and amplitude of the nonlinear stage of Modulation Instability in optical fibers by means of a heterodyne optical time domain reflectometer. This original setup allows to report the symmetry breaking of the process due to an initial condition change.

Authors: A. Mussot, C. naveau, F. Bessin, P. szriftgiser, M. conforti, A. kudlinski, university of Lille, Villeneuve d'Ascq, FRANCE|S. trillo, University of Ferrara, Ferrara, ITALY|

Wide-Band Intermodal Wavelength Conversion in a Dispersion Engineered Highly Nonlinear FMF (W1C.4)
9:00 AM - 9:15 AM     
We demonstrate wide-band (>40-nm in C+L-bands) intermodal wavelength conversion of 24.5-GBaud QPSK, 16- and 64-QAM signals with <1-dB OSNR penalty, using a newly designed highly nonlinear few-mode fiber with similar chromatic dispersion profiles amongst modes.

Authors: G. Rademacher, R.S. Luis, B.J. Puttnam, Y. Awaji, N. Wada, National Inst of Information & Comm Tech, Koganei, ToKyo, JAPAN|M. Suzuki, T. Hasegawa, Sumitomo Electric Industries, Yokohama, ToKyo, JAPAN|

Ultra-Broadband Bragg Scattering Four Wave Mixing in Silicon Rich Silicon Nitride Waveguides (W1C.5)
9:15 AM - 9:30 AM     
We show the first demonstration of Bragg scattering inter-modal four-wavemixing in silicon-rich SiN waveguides. We report wavelength conversion using two spatial modes, exhibiting a maximum efficiency of -15-dB over a flat-bandwidth in excess of 30-nm.

Authors: C. Lacava, T. Dominguez Bucio, A.Z. Khokhar, P. Horak, Y. Jung, F. Gardes, D.J. Richardson, P. Petropoulos, F. Parmigiani, University of Southampton, Southampton, UNITED KINGDOM|F. Parmigiani, Microsoft Research UK, Cambridge, UNITED KINGDOM|

Few-Mode Degenerate Four Wave Mixing in a Few-Mode Semiconductor Optical Amplifier (W1C.6)
9:30 AM - 9:45 AM     
We demonstrate few-mode degenerate four wave mixing in a few-mode semiconductor optical amplifier with high efficiency and large bandwidth for the first time

Authors: Y. Alahmadi, H. Wen, P. LiKamWa, G. Li, CREOL, College of Optics and Photonics, , University of Central Florida, Orlando, Florida, UNITED STATES|P. LiKamWa, G. Li, The Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida, UNITED STATES|Y. Alahmadi, King Abdulaziz City for Science and Technology, Riyadh, Riyadh, SAUDI ARABIA|

3D Shape Sensing Utilizing SBS in Multi-core Fiber (W1C.7)
9:45 AM - 10:00 AM     
3D shape sensing utilizing stimulated Brillouin scattering in multi-core fiber is experimentally demonstrated. A 1.7-m helical curve can be reconstructed with a RMSE of 0.0200 m when the spatial resolution is 20 cm.

Authors: Z. guo, C. Xing, C. Ke, K. Yang, D. Liu, School of Optical and Electronic Information, Huazhong Univ. of Sci. & Tech., Wuhan, CHINA|Z. guo, C. Xing, C. Ke, K. Yang, D. Liu, National Engineering Laboratory for Next Generation Internet Access System, Huazhong Univ. of Sci. & Tech., Wuhan, CHINA|Z. Lian, Yangtze Optical Electronic Co., Ltd., Wuhan, CHINA|

Fast and Wide-range Wavelength Locking Based on a Two-layer Neural Network in a Silicon Microring Switch (W1E.1)
8:00 AM - 8:15 AM     
We propose and experimentally demonstrate a neural-network-based wavelength locking algorithm for a 1 × 2 silicon microring switch. The wavelength locking is performed at a 20-nm/ms locking speed over a full free spectral range.

Authors: Q. Zhu, S. An, R. Cao, Y. Ling, Y. Su, Shanghai Jiao Tong University, Shanghai, ShangHai, CHINA|

A Nonblocking 4×4 Mach-Zehnder Switch with Integrated Gain and Nanosecond-scale Reconfiguration Time (W1E.2)
8:15 AM - 8:30 AM     
We present a silicon photonic switch assembly integrating a nonblocking 4×4 Mach-Zehnder switch and a flip-chipped SOA array. The switch provides close to net-neutralloss in the full C-band for all states and shows nanosecond-scale reconfiguration time.

Authors: N. Dupuis, F. Doany, R. Budd, L. Schares, C. Baks, D. Kuchta, T. Hirokawa, B.G. Lee, IBM TJ Watson Research Center, Yorktown Heights, New York, UNITED STATES|

Silicon Photonic Devices for Optical Switching in Wavelength, Polarization and Mode (W1E.3)
8:30 AM - 9:00 AM     Invited
We present our recent work on thermal-optical switching on silicon chips, including two nanobeam switches with wavelength tuning, and a mode and polarization selective switch having a 748-Gb/s capacity on a single wavelength.

Authors: Y. Su, Y. Zhang, C. Qiu, H. Zhou, X. Jiang, Q. Zhu, Y. He, Shanghai Jiao Tong University, Shanghai, SHANGHAI, CHINA|

Silicon Polarization Splitter and Rotator with Tolerance to Width Variations Using a Nonlinearly-tapered and Partially-etched Directional Coupler (W1E.4)
9:00 AM - 9:15 AM     
A silicon polarization splitter and rotator is experimentally demonstrated using a nonlinearly-tapered directional coupler. Adiabatic polarization splitting and rotating are achieved over a length of 129 μm. Fabrication tolerance to waveguide widths is also verified.

Authors: Y. Zhang, Q. Zhu, Y. He, Y. Su, Shanghai Jiao Tong University, Shanghai , ShangHai, CHINA|

High Extinction Ratio and Broadband O-band Polarization Splitter and Rotator on Silicon-on-insulator (W1E.5)
9:15 AM - 9:30 AM     
We experimentally demonstrate a silicon photonic O-band polarization splitter and rotator. The wafer-level extinction ratio over 80 nm bandwidth has an average of 21.82 dB and 19.05 dB for the upper and lower ports, respectively.

Authors: E. Elfiky, Y. Wang, S. bernal, A. Kumar, A. Samani, M. Jacques, D. Plant, McGill University, Montreal, Quebec, CANADA|C. Gamache, E. Panorel, Lumentum, Ottawa, Ontario, CANADA|P. Koh, Lumentum, Milpitas, California, UNITED STATES|

Dual-Microring Resonator Based 8×8 Silicon Photonic Switch (W1E.6)
9:30 AM - 9:45 AM     
First demonstration of a dual-microring 8×8 silicon-photonic switch in a compact 4 mm2 footprint shows 4.4-8.4 dB end-to-end on-chip loss, -16.75 dB first-order switching crosstalk, and 40 GHz switching bandwidth capable of high-data-rate datacenter transmissions.

Authors: Y. Huang, Q. Cheng, Y. Hung, A. Novack, K. Bergman, Columbia University, New York, New York, UNITED STATES|H. Guan, A. Novack, M. Streshinsky, M. Hochberg, Elenion Technologies, New York, New York, UNITED STATES|

850 nm VCSELs for 50 Gb/s NRZ Error-Free Transmission over 100-meter OM4 and up to 115 oC Operation (W3A.1)
2:00 PM - 2:15 PM     
850-nm multi-mode oxide-VCSELs with record performance of 50-Gb/s (RT) and 44-Gb/s (85°C) NRZ error-free transmission over 100-meter OM4 are demonstrated. The L-I-V, optical bandwidth and BER of 30 GHz VCSEL are characterized up to 115°C

Authors: H. Wang, W. Fu, J. Qiu, M. Feng, Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, UNITED STATES|

Ultra-fast Zn-diffusion/Oxide-relief 940 nm VCSELs (W3A.2)
2:15 PM - 2:30 PM     
We demonstrate 940nm VCSELs with record-high 3-dB E-O bandwidths as 40 (32) GHz under room-temperature (85C0) operation. It achieves error-free 60Gbps (room-temperature) and 50Gbps (85 C0) OOK transmission over 1m and 100m OM5 fiber, respectively.

Authors: C. Cheng, Z. Khan, J. Shi, National Central University, Jungli, TAIWAN|M. Agustin, J. Kropp, N. Ledentsov, N. Ledentsov Jr, VI Systems GmbH, Hardenbergstr, Berlin, GERMANY|

25-30 Gbps Error-Free Data Transmission with Large Oxide Aperture Diameter 980 nm VCSELs (W3A.3)
2:30 PM - 2:45 PM     
Using a simplified 980 nm vertical cavity surface emitting laser (VCSEL) epitaxial design we achieve record error free 25 and 30 Gbps data transmission at operating optical output powers of 23 and 17 mW, respectively.

Authors: J. Lott, Technische Universität Berlin, Berlin, GERMANY|

85°C Operation of Single-Mode 850 nm VCSELs for High Speed Error-Free Transmission up to 1 km in OM4 Fiber (W3A.4)
2:45 PM - 3:00 PM     
Single-mode 850 nm oxide-confined VCSELs with integrated mode-selective filter are developed. The fabricated devices have demonstrated 32 Gb/s (room temperature) & 26 Gb/s (85°C) error-free transmission over 500 m OM4 fiber, and 28 Gb/s (room temperature) & 22 Gb/s (85°C) over 1 km OM4 fiber.

Authors: J. Qiu, X. Yu, M. Feng, Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, UNITED STATES|

Full C-band Wavelength Demultiplexer with Optical Gain for Use in Wavelength Selective Switch (W3A.5)
3:00 PM - 3:15 PM     
A full C-band wavelength demultiplexer based on Bragg reflector waveguide is demonstrated with optical gain. Current injection into the device improved the demultiplexed resolution and compensated the device insertion loss at the same time.

Authors: R. Togashi, X. Gu, T. Sakaguchi, F. Koyama, Tokyo Institute of Technology, Yokohama, KANAGAWA, JAPAN|B. Cao, J. Shimizu, Huawei Technologies Japan K.K., Yokohama, KANAGAWA, JAPAN|

Demonstration of 100 Gbps per Lambda PAM4 Transmission with 1310 nm and 1330 nm Directly Modulated Lasers (W3A.6)
3:15 PM - 3:30 PM     
100Gbps per lambda PAM4 transmission with 1310 nm and 1330 nm directly modulated lasers is demonstrated. Dispersion penalty after transmission through 2km SMF is less than 1 dB measured in TDECQ or receiver sensitivity change.

Authors: M. Li, Y. Chen, Y. Liang, H. Zhang, E. Marentes, Q. Li, Y. Wang, J. Zheng, Applied Optoelectronics, Inc., Sugar Land, Texas, UNITED STATES|

Carrier Diffusion Effect in Gain Chip and 60 mW Tunable External Cavity Laser with Diffusion-Limited Gain Chip and Polymer-Based Waveguide Grating (W3A.7)
3:30 PM - 3:45 PM     
In a tunable external cavity laser (T-ECL) module with a diffusion-reduced gain chip and a polymer waveguide grating, we have obtained Pout of 60 mW and 50 mW at 20 °C and 40 °C, respectively.

Authors: D. Kim, Y. Han, D. Lee, S. Kim, S. Jeon, S. park, J. Shin, Y. Kwon, J. Kim, Y. Baek, Electronics & Telecomm Res. Inst, Daejeon, KOREA (THE REPUBLIC OF)|H. Cho, ELDIS, Gwangju, KOREA (THE REPUBLIC OF)|

Narrow Linewidth InAs/InP Quantum Dot DFB Laser (W3A.8)
3:45 PM - 4:00 PM     
Narrow linewidth InAs/InP QD DFB lasers with linewidths of less than 50kHz at 20°C which broadens to less than 80kHz at 800C were demonstrated using delayed self- heterodyne as well as by optical frequency comb interferometry

Authors: T. Septon, S. Gosh, G. Eisenstein, Electrical Engineering , Technion, Haifa, ISRAEL|A. Becker, V. Sichkovskyi, F. Schnabel, A. Rippien, J. Reithmaier, Institute of Nanostructure Technologies and Analytics (INA), University of Kassel , Kassel, GERMANY|

Fully reconfigurable waveguide Bragg gratings for programmable photonic signal processing (W3B.1)
2:00 PM - 2:30 PM     Invited
Fully reconfigurable silicon-based waveguide Bragg gratings for programmable photonic signal processing are discussed. Two waveguide grating structures are introduced and their experimental verifications are provided.

Authors: J. Yao, W. Zhang, Ottawa University, Ottawa, Ontario, CANADA|

Inverse Design and Demonstration of Ultracompact Silicon Polarization Rotator (W3B.2)
2:30 PM - 2:45 PM     
An ultra-compact silicon polarization rotator based on inverse-designed subwavelength structures is proposed and experimentally exhibited high performance with high extinction ratio of 19 dB, a footprint of 1.2 × 7.2 µm2 and only one-step etching.

Authors: W. Chang, Y. Ao, L. lu, S. Fu, L. deng, M. Cheng, L. Xia, D. Liu, M. Zhang, Huazhong Univ. of Science and Technology, Wuhan, HUBEI, CHINA|

50GHz Silicon Cascaded Mach-zehnder Wavelength Filter and Automatic Phase Error Correction (W3B.3)
2:45 PM - 3:00 PM     
We demonstrate a silicon photonic 50GHz 16-channel cascaded Mach-Zehnder wavelength filter with over 26dB extinction ratio. An automatic phase error correction method was also proposed and implemented to guarantee filter transfer characteristic.

Authors: L. Han, B.P. Kuo, A. Pejkic, N. Alic, S. Radic, University of California San Diego, La Jolla, California, UNITED STATES|

First Experimental Demonstration of Wavefront-matching-method-designed Silicon Mode Converters (W3B.4)
3:00 PM - 3:15 PM     
Ultrasmall TE0-TE1 and TE1-TE2 mode converters based on Si-wire waveguides designed by wavefront matching (WFM) method are demonstrated both theoretically and experimentally. This is the first demonstration of WFM-designed Si waveguide devices.

Authors: Y. Sawada, T. Fujisawa, T. Sato, K. Saitoh, Hokkaido University, Sapporo, HOKKAIDO, JAPAN|

Deep Neural Network Inverse Modeling for Integrated Photonics (W3B.5)
3:15 PM - 3:30 PM     
We propose a deep neural network model that instantaneously predicts the optical response of nanopatterned silicon photonic power splitter topologies, and inversely approximates compact (2.6 x 2.6 um2) and efficient (above >92%) power splitters for target splitting ratios.

Authors: M. Tahersima, K. Kojima, T. Koike-Akino, D. Jha, B. Wang, C. Lin, K. Parsons, Mitsubishi Electric Research Labs, Cambridge , Massachusetts, UNITED STATES|

4-port Integrated Stokes Vector Receiver Circuit for Multi-level 3D Signal Detection and OSNR Monitoring (W3B.6)
3:30 PM - 3:45 PM     
A novel Stokes vector (SV) receiver circuit with 4-port configuration integrated on a compact InP chip is fabricated to demonstrate SV retrieval with various intensity and degree-of-polarization as well as application to in-band OSNR monitoring.

Authors: T. Suganuma, S. Ghosh, Y. Nakano, T. Tanemura, University of Tokyo, Bunkyo-ku, TOKYO, JAPAN|

Ultra-compact and Polarization-insensitive MMI Coupler Based on Inverse Design (W3B.7)
3:45 PM - 4:00 PM     
We experimentally demonstrate a polarization-insensitive MMI coupler with a footprint of 2.4×2.4 μm2. It allows for >90% transmission efficiency for both TE and TM polarized optical wave with a wavelength range from 1480 ~ 1560 nm.

Authors: Y. Liu, Z. Li, S. Wang, N. Zhang, Y. Yao, Q. Song, K. Xu, Harbin Institute of Technology (Shenzhen, Shenzhen, GUANGDONG, CHINA|J. Du, Z. He, Shanghai Jiao Tong Univ, Shanghai, GUANGDONG, CHINA|

III-V Quantum Dot Lasers Monolithically Grown on Silcion (W4E.1)
4:30 PM - 5:00 PM     Invited
We review the direct growth of III-V quantum dot laser on Si substrates. A low threading dislocation density, on the order of 105cm-2, for III-V epilayer on Si has been achieved.

Authors: H. Liu, University College London, Milton Keynes, UNITED KINGDOM|

A Low-noise High-channel-count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si (W4E.2)
5:00 PM - 5:15 PM     
We report a low noise high-channel-count 20 GHz passively mode locked quantum dot laser grown on CMOS compatible silicon substrate. The laser demonstrates a record low timing jitter value of 82.7 fs (4 – 80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz as well as 58 wavelength channels within 3 dB optical bandwidth (80 lines within 10 dB).

Authors: S. Liu, M. Kennedy, J.E. Bowers, Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California, UNITED STATES|D. Jung, Institute for Energy Efficiency, University of California, Santa Barbara, Santa Barbara, California, UNITED STATES|J. Norman, A. Gossard, Materials Department, University of California, Santa Barbara, Santa Barbara, California, UNITED STATES|

Coherent and Incoherent Optical Feedback Sensitivity of High-coherence Si/III-V Hybrid Lasers (W4E.3)
5:15 PM - 5:30 PM     
We demonstrate that high-coherence Si/III-V hybrid lasers are much more robust than conventional III-V DFB lasers against both coherent and incoherent optical feedback by examining the frequency noise power spectral density of the lasers.

Authors: Z. Zhang, H. Wang, C.T. Santis, A. Yariv, Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California, UNITED STATES|N. Satyan, G. Rakuljic, Telaris Inc, Santa Monica, California, UNITED STATES|A. Yariv, Department of Electrical Engineering, California Institute of Technology, Pasadena, California, UNITED STATES|

Sub-kHz linewidth Extended-DBR lasers heterogeneously integrated on silicon (W4E.4)
5:30 PM - 5:45 PM     
We demonstrate single-mode E-DBR lasers with 1kHz linewidth and >37mW output power, and ring-assisted E-DBR lasers with 500Hz linewidth, by heterogeneously integrating III-V gain material with a 15mm long ultra-low loss silicon waveguide-based Bragg reflector.

Authors: D. Huang, M. Tran, J. Guo, J. Peters, T. Komljenovic, A. Malik, J.E. Bowers, University of California Santa Barbara, Goleta, California, UNITED STATES|P. Morton, Morton Photonics, West Friendship, Maryland, UNITED STATES|

High-Performance Hybrid-Integrated Silicon Photonic Tunable Laser (W4E.5)
5:45 PM - 6:00 PM     
We report a silicon photonic tunable laser for coherent communication, with output power reaching 140 mW across the C-band, linewidth narrower than 80 kHz, SMSR larger than 50 dB, and precise gridless frequency tuning.

Authors: Y. Gao, S. Lee, R. Patel, J. Lo, J. Sun, L. Zhu, J. Zhou, J. Hong, NeoPhotonics, San Jose, California, UNITED STATES|

III-V/Si PICs based on micro-transfer-printing (W4E.6)
6:00 PM - 6:30 PM     Invited
III-V opto-electronic devices (photodiodes, etched facet lasers) are micro-transfer-printed onto silicon waveguide circuits. An alignment-tolerant interface for evanescently-coupled devices is proposed enabling III-V/Si heterogeneously integrated PICs using micro-transfer-printing.

Authors: G. Roelkens, J. Zhang, G. Muliuk, J. Goyvaerts, B. Haq, C. Op de Beeck, A. Liles, Z. Wang, S. Dhoore, S. Kumari, J. Juvert, D. Van Thourhout, R.F. Baets, INTEC, Ghent University - imec, Ghent, BELGIUM|J. Van Campenhout, B. Kuyken, imec, Leuven, BELGIUM|B. Corbett, Tyndall National Institute, Cork, IRELAND|A. Trindade, C. Bower, X-Celeprint, Cork, IRELAND|

Terahertz Photonics - An Overview (Th1C.1)
8:00 AM - 9:00 AM     Tutorial
Free-space communication, with its ever increasing need for higher bandwidth, is pushing the frequency of the carrier wave into the terahertz frequency regime. It has developed into a technology driver for sub-THz devices and systems. An overview will be given of the state-of-the-art of relevant optoelectronic, all-electronic and passive devices of THz photonics, and applications will be described both pertaining to communication but also to other fields such as THz imaging and sensing.

Authors: H.G. Roskos, Physics Department, Goethe-University Frankfurt, Frankfurt am Main, Hesse, GERMANY|

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters (Th1C.2)
9:00 AM - 9:15 AM     
A monolithically integrated dual-DFB laser generates a 408 GHz carrier used for demonstrating a record-high single-channel bit rate of 131 Gbit/s transmitted over 10.7 m. 16-QAM-OFDM modulation and specific nonlinear equalization techniques are employed.

Authors: S. Jai, D. Kong, T. Morioka, H. Hu, L.K. Oxenløwe, DTU Fotonik, Lyngby, DENMARK|L. Zhang, O. Ozolins, X. Pang, S. Popov, J. Chen, KTH Royal Institute of Technology, Kista, SWEDEN|M. Lo, G. Carpintero, Universidad Carlos III de Madrid, Madrid, SPAIN|O. Ozolins, A. Udalcovs, NETLAB, Research Institutes of Sweden AB, Kista, SWEDEN|X. Yu, Zhejiang University, Hangzhou, CHINA|S. Xiao, Shanghai Jiao Tong University, Shanghai, CHINA|

Photonic generation of dual-band coherent radar signals in S- and X-band (Th1C.3)
9:15 AM - 9:30 AM     
Based on phase-locked dual combs, dual-band coherent radar signals at S- and X-band are generated with large modulation bandwidth and flexible tunability. The system performance is evaluated through measuring the range resolution of two targets.

Authors: Y. Tong, Shanghai Jiao Tong University, Shanghai, ShangHai, CHINA|

Broadband and continuous beamformer based on switched delay lines cascaded by optical ring resonator (Th1C.4)
9:30 AM - 9:45 AM     
A beamforming chip is realized on indium phosphide (InP) employing cascaded optical ring resonators and switched delay lines for wide bandwidth applications. 6.7 Gbps transmission in the K-band (17-22 GHz) is achieved up to 23.1 ps steering on a 4 GHz-wide OFDM signal.

Authors: A. Trinidad, Z. Cao, J. van Zantvoort, E. Tangdiongga, T. Koonen, Technical University of Eindhoven, Eindhoven, NETHERLANDS|

93-GHz Signal Beam Steering with True Time Delayed Integrated Optical Beamforming Network (Th1C.5)
9:45 AM - 10:00 AM     
A 93-GHz beam steering experiment based on a 1x4 phased array antenna was demonstrated, achieving beam steering angles of −51o, ±34o ,±17o and 0o. An integrated optical beamforming network chip with true time delays was employed.

Authors: Y. Liu, B. Isaac, J. Klamkin, University of California Santa Barbara, Goleta, California, UNITED STATES|J. Kalkavage, E. Adles, T. Clark, The Johns Hopkins University Applied Physics Laboratory, Laurel, Maryland, UNITED STATES|

Large Scale Silicon Photonics Switches Based on MEMS Technology (Th1E.1)
8:00 AM - 8:30 AM     Invited
We review the recent developments in large-scale silicon photonic switches, focusing on MEMS-based switches that enables high port-count (128x128), low optical loss (0.05 dB/port), low crosstalk, broadband operation, sub-microsecond response time, and low power consumption.

Authors: M.C. Wu, T. Seok, K. Kwon, J. Henriksson, J. Luo, University of California Berkeley, Berkeley, California, UNITED STATES|T. Seok, Gwangju Institute of Science and Technology, Gwangju, California, KOREA (THE REPUBLIC OF)|

Polarization-diversity 32 × 32 Si Photonics Switch with Non-duplicate Diversity Circuit in Double-Layer Platform (Th1E.2)
8:30 AM - 8:45 AM     
We demonstrate a polarization-diversity 32×32 Si-photonics switch by newly introducing a SiN overpass circuit onto our non-duplicate polarization-diversity path-independent insertion-loss switch circuit. An average PDL in a sampled connection setting was evaluated as 3.2 dB.

Authors: K. Suzuki, R. Konoike, N. Yokoyama, M. Seki, M. Ohtsuka, S. Saitoh, S. Suda, H. Matsuura, K. Yamada, S. Namiki, H. Kawashima, K. Ikeda, Natl Inst of Adv Industrial Sci & Tech, Tsukuba, IBARAKI, JAPAN|

Integrated Reconfigurable 4×4 Optical Unitary Converter Using Multiport Directional Couplers (Th1E.3)
8:45 AM - 9:00 AM     
We demonstrate novel silicon photonic 4×4 reconfigurable optical unitary converter, comprising multiport directional couplers and phase shifter arrays. By optimizing the phase shift with simulated annealing algorithm, reconfigurable mode sorting and switching are experimentally realized.

Authors: R. Tanomura, R. Tang, S. Ghosh, T. Tanemura, Y. Nakano, the University of Tokyo, Bunkyo-ku, TOKYO, JAPAN|

Recent Developments in High Radix Optical Switching (Th1E.4)
9:00 AM - 9:30 AM     Invited
Low loss all-optical circuit switches enable network automation directly at the fiber layer. We review recent advances in free-space beam-steering technology and examine the prospects and challenges presented in scaling beyond 384x384 non-blocking fiber ports.

Authors: N.J. Parsons, HUBER+SUHNER Polatis, Inc, Cambridge, UNITED KINGDOM|

240x240 Wafer-scale Silicon Photonic Switches (Th1E.5)
9:30 AM - 9:45 AM     
We report on 240x240 silicon photonic MEMS switches on 4cm x 4cm dies realized by wafer-scale integration and reticle stitching. The maximum on-chip loss is measured to be 9.8dB and the crosstalk is below -70dB.

Authors: T. Seok, Gwangju Institute of Science and Technology, Gwangju, KOREA (THE REPUBLIC OF)|T. Seok, K. Kwon, J. Henriksson, J. Luo, M.C. Wu, University of California, Berkeley, Berkeley, California, UNITED STATES|

LCoS-based Photonic Crossconnect (Th1E.6)
9:45 AM - 10:00 AM     
We demonstrate a 16 x 16 photonic crossconnect using LCoS steering, with an average insertion loss of 4 dB, which allows alignment error to be corrected and demonstrates power splitting for increased network functionality.

Authors: H. Chen, N.K. Fontaine, R. ryf, D.T. Neilson, Nokia Bell Labs, Holmdel, New Jersey, UNITED STATES|

Highly Sensitive, 112 Gb/s O-band Waveguide Coupled Silicon-germanium Avalanche Photodetectors (Th3B.1)
2:00 PM - 2:15 PM     
We present two different waveguide coupled SiGe APDs. We report 25 Gb/s error free operation with -12 dBm input power. Additionally, 112 Gb/s PAM-4 operation below the KP4-FEC threshold of 2.0 × 10-4 is reported.

Authors: A. Samani, O. Carpentier, E. Elfiky, M. Jacques, A. Kumar, Y. Wang, L. Guenin, D. Plant, McGill University, Montreal, Quebec, CANADA|C. Gamache, Lumentum LLC, Ottawa, Ontario, CANADA|P. Koh, Lumentum LLC, Milpitas, California, UNITED STATES|

35Gb/s Ultralow-Voltage Three-Terminal Si-Ge Avalanche Photodiode (Th3B.2)
2:15 PM - 2:30 PM     
We demonstrate a 35Gb/s three-terminal waveguide silicon-germanium avalanche photodiode using a lateral interdigitated multiplication region. A breakdown voltage of -6V, a bandwidth of 18.9GHz, and a multiplication gain of 15 are achieved.

Authors: B. Wang, Z. Huang, X. Zeng, D. Liang, M. Fiorentino, R. Beausoleil, Hewlett Packard Enterprise, Palo Alto, California, UNITED STATES|

Novel CMOS-Compatible Ultralow Capacitance Hybrid III-V/Si Photodetectors Tested up to 32 Gbps NRZ (Th3B.3)
2:30 PM - 2:45 PM     
We demonstrate the monolithic integration of CMOS-compatible ultralow capacitance hybrid III-V/Si photodetectors and test these devices up to 32Gbps NRZ. The lateral photodiodes are suitable for ultrafast optical communication without using a transimpedance amplifier.

Authors: Y. Baumgartner, M. Seifried, C. Caer, P. Stark, D. Caimi, B.J. Offrein, L. Czornomaz, IBM Research - Zurich, Ruschlikon, SWITZERLAND|Y. Baumgartner, J. Faist, ETH Zurich, Institute of Quantum Electronics, Auguste-Piccard-Hof 1, 8093 Zürich, Zurich, SWITZERLAND|

Photodetector with Monolithically Integrated SOA for Pre-amplification of High-speed Signals with 56GBd and Above (Th3B.4)
2:45 PM - 3:00 PM     
We demonstrate an InP-based photodetector with a monolithically integrated SOA. The device allows the detection of signals with 14dB less optical input power, without using electrical amplification. Due to the short carrier lifetime in the SOA, amplification without pattern effects for signals with a symbol rate of 56GBd is achieved.

Authors: P. Runge, S. Keyvaninia, M. Gruner, A. Schindler, F. Schröder, R. Kaiser, F. Ganzer, S. Mutschall, A. Seeger, Fraunhofer Institut, Berlin, GERMANY|J. Stephan, G. Unterbörsch, Finisar Germany GmbH, Berlin, GERMANY|

UTC-PD-integrated HEMT for Optical-to-millimeter-wave Carrier Frequency Down-conversion (Th3B.5)
3:00 PM - 3:15 PM     
We newly developed an InGaAs HEMT integrated with a uni-traveling-carrier photodiode (UTC-PD) structure as a carrier frequency down-converter from optical to wireless data signals. We demonstrate the performance enhancement by the UTC-PD integration and also verify its feasibility for the practical use in future full coherent networks.

Authors: Y. Omori, T. Hosotani, T. Otsuji, A. Satou, Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi, JAPAN|Y. Omori, T. Hosotani, T. Otsuji, K. Iwatsuki, A. Satou, Research Organization of Electrical Communication, Tohoku University, Sendai, Miyagi, JAPAN|

Efficiency of Waveguide Uni-Traveling-Carrier Photodiodes for Microwave Signal Generation (Th3B.6)
3:15 PM - 3:30 PM     
The power conversion efficiency of uni-traveling-carrier photodiodes (UTC-PDs) and their limitations for generating microwave signals are discussed. The model is validated with experimental results from a fabricated waveguide UTC-PD that demonstrates a 60-GHz bandwidth.

Authors: B. Isaac, Y. Liu, S. Pinna, J. Klamkin, University of California Santa Barbara, Goleta, California, UNITED STATES|

1-λ, 16-parallel Lanes, 50-Gbaud On-off Keying Multi-core Fiber Communication Directly Coupled to High Speed 2D-photodetector Array (Th3B.7)
3:30 PM - 3:45 PM     
We present a newly developed high-speed 16-pixel photodetector array device operated at 50-Gbuad which circumvents the need for fiber splicing, including its receiving performance when coupled to 16-multi-core fibers, assuming next-generation short-range optical fiber communications.

Authors: T. Umezawa, A. Matsumoto, A. Kanno, N. Yamamoto, T. Kawanishi, National Inst of Information & Comm Tech, Koganei, ToKyo, JAPAN|T. Kawanishi, Waseda University, Tokyo, ToKyo, JAPAN|

Two-dimensional Van Der Waals Heterostructure Tunneling Photodiodes on Silicon Nitride Waveguides (Th3B.8)
3:45 PM - 4:00 PM     
We fabricated h-BN/MoS2/graphene van der Waals heterostructures on silicon nitride waveguides for use as high-speed infrared tunnel photodiodes. We measured 28-GHz bandwidth, 0.24-A/W responsivity, and on/off ratio larger than 10,000.

Authors: Y. Gao, G. Zhou, H. Tsang, C. Shu, The Chinese University of Hong Kong, Hong Kong, HONG KONG|

Ultrafast Laser Processes for Photonics (Th3D.1)
2:00 PM - 2:30 PM     Invited
Space division multiplexing (SDM) has the potential to dramatically increase the information capacity of single optical fibres. I will review how ultrafast laser processing techniques can be used to fabricate interconnect components for SDM applications.

Authors: R.R. Thomson, D. Choudhury, C. Ross, Institute of Photonics and Quantum Sciences, Heriot Watt University, Edinburgh, UNITED KINGDOM|

Low-Loss 19 core Fan-in/Fan-out Device Using Reduced-Cladding Graded Index Fibers (Th3D.2)
2:30 PM - 2:45 PM     
We demonstrate a 19-core fan-in/fan-out device with low insertion loss using reduced-cladding graded index fibers and micro-structured preform. The average insertion loss for a pair of devices spliced to 3m of 19 core trench-assisted multicore fiber is 1.27 dB.

Authors: J. Alvarado Zacarias, J. Antonio-Lopez, M. Habib, S. Gausmann, N. Wang, D. Cruz-Delgado, G. Li, A. Schulzgen, R. Amezcua Correa, CREOL, The College of Optics & Photonics, Orlando, Florida, UNITED STATES|A. Amezcua-Correa, L. Demontmorillon, P. Sillard, Prysmian Group, Haisnex Cedex, Florida, FRANCE|

Ultra-Low Crosstalk Fused Taper Type Fan-in/Fan-out Devices for Multicore Fibers (Th3D.3)
2:45 PM - 3:00 PM     
We achieved fan-in/fan-out devices for 7-core multicore fibers with ultra-low crosstalk under -62 dB. The maximum insertion loss and Fresnel reflection are less than 1.2 dB and -58 dB, respectively.

Authors: L. Gan, J. Zhou, L. Shen, X. Guo, Y. Wang, L. Xia, S. Fu, M. Tang, D. Liu, Next Generation Internet Access National, Wuhan, HUBEI, CHINA|C. Yang, W. Tong, Yangtze Optical Fiber and Cable Joint Stock Limited Company, Wuhan, Hubei, CHINA|

Demonstration of Distributed Stress Sensor Based on Mode Coupling in Weakly-Coupled FMF (Th3D.4)
3:00 PM - 3:15 PM     
We propose a distributed stress sensing mechanism based on mode coupling in weakly-coupled FMF. The scheme is experimentally demonstrated over 5.27-km FMF with a spatial resolution of 13.9-m and a stress resolution of 0.046-kg/cm.

Authors: J. Jia, J. Li, D. Ge, Y. Gao, Y. Yang, Z. Li, Z. Chen, Y. He, Peking University, Beijing, BeiJIng, CHINA|Y. Zhang, Fiberhome Fujikura, Wuhan, Hubei, CHINA|

All-Fiber Orbital Angular Momentum (OAM) Functional Devices for Mode-Division (De)Multiplexing in Conventional Graded-Index Multimode Fiber (Th3D.5)
3:15 PM - 3:30 PM     
We propose and fabricate all-fiber orbital angular momentum (OAM) functional devices for mode-division (de)multiplexing in conventional graded-index multimode fiber, based on which OAM±01, OAM±11 and OAM±21 (de)multiplexing in OM3 fiber is successfully demonstrated in the experiment with favorable mode-crosstalk performance

Authors: W. Zhou, H. Cao, L. Wang, J. Wang, HUST, Wuhan, HuBei , CHINA|

Polarization Dependence of Mode-Group Selective Air-Clad Photonic Lantern (Th3D.6)
3:30 PM - 3:45 PM     
Polarization dependence of loss and cross talk of an air-clad photonic lantern is experimentally investigated. Polarization dependence of two SDM 10 Gbits/s channels transmitted up to 20 km without any MIMO processing is further investigated.

Authors: N. Mathew, M. Galili, M. Lillieholm, M.A. Castaneda, K. Rottwitt, DTU, Copenhagen, DENMARK|L.E. Grüner-Nielsen, Danish Optical Fiber Innovation, Brønshøj, DENMARK|

Cladding Pump Recycling Device for 19-core EDFA (Th3D.7)
3:45 PM - 4:00 PM     
We confirm that cladding pump collection ratios of pump recycling devices for 19-core EDFAs are almost the same with the 7-core devices. A 19-core EDFA with cladding pump recycling has increased gain and unchanged NF.

Authors: S. Takasaka, K. Maeda, K. Kawasaki, K. yoshioka, R. Sugizaki, M. Tsukamoto, Furukawa Electric, Ichihara, Chiba, JAPAN|

Workshop - Opportunities and Challenges for Optical Switching in the Data Center
3 March, 1:00 PM - 3:30 PM     
 Data center traffic is experiencing double-digit growth, generating high pressure on current switching architectures to keep pace with the bandwidth and energy-efficiency demands for further scaling. Optical switching is often advocated as an enabling technology capable of sustaining the explosive growth of data center networks but several challenges needs to be solved before optical switches can be deployed at scale. The workshop will review the hurdles faced by current electronic switching disciplines and will discuss the roadmap for introducing optical switching. We will explore key device, transmission, and network technologies that scale to realistic network sizes and will indicate the requirements posed on the underlying components. We will also discuss open challenges associated to the control of large optical data center infrastructures including the design of network controllers and dynamic schedulers for resource allocation and new routing and congestion-control protocols.

Workshop - Super DACs and ADCs - To Interleave or not to Interleave
7 March, 4:00 PM - 6:30 PM 

High-speed digital-to-analog (DAC) and analog-to-digital (ADC) conversion is at the heart of high performance digital-coherent optical communication systems. Today’s single-carrier systems are largely determined by available DAC/ADC bandwidths and resolutions that impose limits on useable symbol rates and constellation sizes. Similarly, alternative digital electronic multiplexing techniques also face this frontier. The analog interleaving of multiple converters into a “Super DAC/ADC” multiplexed system is becoming therefore an attractive approach to increase sample rates and bandwidth beyond that of state-of-the-art converters. However, it is not yet clear whether the additional hardware and complexity over traditional (e.g. wavelength-division) multiplexing techniques is justified, and which of the different interleaving concepts (time/frequency, analog electrical/optical) has the potential to make its way into future transmission systems (or into other applications of ultra-highspeed RF/optical waveform synthesis and analysis). In order to raise a discussion on these topics, the workshop wants to provide inputs on the requirements of future transmission systems, whether and how they can be met by traditional DAC and ADC architectures, what the advantages and limits of interleaved super DAC/ADCs are, and how they can be realized.

Workshop - What is a Real Killer Application of SDM, Telecom or Non-Telecom?
3 March, 4:00 PM - 6:30 PM    

In the last 10 years we have seen significant advances in research on SDM as a technology to expand the transmission capacity in an energy- and cost- efficient way. Recent hero experiments using SDM fibers (multi-core and/or few-mode) have demonstrated capacities higher than 100-1000 Pbit/s*km per fiber. 

Yet, we have not seen such SDM fibers being deployed for telecom use, instead, an increasing amount of standard SMFs is being used. The latter solution is certainly effective in the short term, but not sure in the future.

This situation arises some important questions. What do we do with all this SDM technology? Do we have some valuable application other than telecom? Or do we still have something to do for telecom application? 

We have such nice technologies as mode multiplexers, unscrambling light, multimode/multi core amplification, sensing, integrated devices, high power lasers, and all these crazy new optical fibers. In the workshop, experts from several categories of SDM technology will gather and give their ideas on application.

Panel - Space Photonics: Disruptive Satellite Laser Communications and Astrophotonics
5 March, 4:30 PM - 6:30 PM     

Photonics is expected to play a key role in space applications as optics and fiber-optics penetrates into satellite payloads and photonic components and sub-systems become integral functional parts of telecommunication, on-board signal distribution and/or remote sensing instrumentation. The FCC has received more than 15 applications for constellations with several confirmed inter-satellite link designs relying on laser communications. On the other hand, space instrument science increasingly uses optics and photonics (e.g. fiber-based instruments) for Earth observation and astronomical exploration with operational requirements in extreme environments. The panel will discuss the technology development requirements, qualification deltas, cost targets and ground-based infrastructure required for volume manufacturing and/or integration of space photonic hardware. We will also analyze the challenges in designing and developing new generation of photonic instruments.

Panel - SDM Technology Solutions for Next Generation Submarine Transmission
7 March, 8:00 AM - 10:00 AM 

The field of submarine system design is always in search of new cost-effective, power-efficient, and highly reliable approaches to increasing overall cable capacity. Significant recent advances have been made in this area by the addition of transmission bands and fiber pairs per cable, and by new design paradigms for power-efficient optimization of total cable capacity.

Multi-core fiber technology could be the next likely step in undersea cable design to support the rapid increases in internet capacity, with up to 500 Tbit/s per fiber demonstrated over trans-Pacific distances in the laboratory. Multi-core fiber solutions also provide higher physical density, a key characteristic for space-limited submarine equipment. The power-efficient and cost-effective amplification approaches required for multi-core fiber transmission systems are an ongoing area of research.

The focus of this panel will be the challenges and solutions for implementing massive spatial and spectral multiplexing SDM technology within the unusual design constraints of undersea cable systems. Speakers from fiber and optical component suppliers, submarine system providers, and network owners will present their views on the evolution of high-capacity submarine transmission systems, and whether multi-core transmission technologies will play a role in that future.



Sponsored by: