PRESS RELEASE

17 March 2016

Contact:
Laëtitia OMNES +33 231 5354 06 laetitia.omnes@ipdia.com

IPDiA presents the first 100 GHz measurement results of Silicon Capacitor for Xtreme Broadband and Microwave Applications

IPDiA, world leader in silicon passive components, is continually looking for ways to improve the performances for optical and microwave systems by developing new technologies and design methodologies. IPDiA is pleased to present the first measurements showing superior performance from few 10 kHz to 100 GHz+ compared with current technologies.
Main performances are:

• Flat frequency response (Insertion Loss < 0.4 dB up to 60 GHz & < 1.2 dB up to 110 GHz);
• Excellent return loss better than -20 dB;
• Resonance free thanks to the capacitor single layer design of 50 µm thickness;
• Zero piezoelectric effect and low dielectric absorption (0.05%), at least 12 times lower than ceramic capacitors;
• Ultra low electrical variation over voltage and temperature (lower than 1%);

 
IPDiA technology offers a high capacitance value of 10 nF in a 100 µm 0201 SMT (0.6x0.3 mm).
 

Symbol	Parameter	Conditions	Min.	Typ.	Max	Unit
C	Capacitance value	@25°C	-	10	-	nF
DCp	Capacitance tolerance	@25°C	-15	-	15	%
RVDC	Rated voltage		-	3.6	-	VDC
BV	Breakdown voltage		11	-	-	V
TOP	Operating temperature		-55	20	150	°C
DCT	Capacitance temperature variation	-55°C to +150°C	-24	0	24	ppm/°C
DCRVDC	Capacitance voltage variation	From 0V to RVDC	-	-	0.1	%/VDC
IL	Insertion Loss	@20GHz	-	-	0.2	dB
		@40GHz	-	-	0.3
		@60GHz	-	-	0.4
		@100GHz	-	-	1
RL	Return Loss	Up to 100GHz	-20	-	-	dB
ESR	Equivalent Serial Resistance	@25°C	-	300	-	mΩ
ESL	Equivalent Serial Inductance	@25°C & SRF	-	100	-	pH

 

Preliminary electrical performances of a 10 nF – specific 0201M Silicon capacitor

Preliminary frequency response in transmission mode of a 10 nF – specific 0201M Silicon capacitor