The Optical Networking and Communication
Conference & Exhibition

Los Angeles Convention Center,
Los Angeles, California, USA

III-V + Silicon: To Integrate or to Co-package?

Event type: Workshop


Anders Larsson, Chalmers University of Technology, Sweden; Mike Larson, Lumentum, USA; Bert Offrein, IBM, Switzerland


Silicon photonics provides a path to the cost-effective realization of transceiver chips but lacks a straightforward solution to integrate the light source. Today, co-packaging (hybrid integration) is used commercially, while intense research is pursued on III-V to silicon bonding techniques (heterogeneous integration) and even hetero-epitaxial III-V on silicon growth (monolithic integration).

In this workshop some of the main III-V on silicon integration approaches will be reviewed by leading experts in the field and discussed among the participants. In addition to the technological characteristics, the presentations will address system-level aspects such as functionality, power efficiency, form factor and anticipated cost. What are the prospects and challenges and what is ultimately the best method to combine III-V and silicon technology for future applications?
Questions to be addressed during the workshop are:

  • What is generally the best technique for bringing light to the silicon photonics PIC, from cost/size/efficiency/performance perspectives? Is it application dependent?

  • For hybrid integration, is there a superior technique for coupling the laser to the silicon photonics PIC? What manufacturing capability (alignment tolerance) is required and what is the typical coupling loss?

  • For what applications would an on-chip (heterogeneous or monolithic) integrated light source offer superior performance to hybrid integration, at what cost advantage and why?

  • Is on-chip integration of the light source a prerequisite for higher integration density, more channels, reduced footprint, and higher energy efficiency? Is it the inevitable technology for all applications in the future?

  • Will further integration of III-V modulator or amplifier material address silicon photonics shortcomings of low electro-optic efficiency and insertion loss? Will silicon ultimately be relegated to passive waveguides only?

  • Can hetero-epitaxial growth of III-Vs on silicon ever achieve the material quality needed for high performance on-chip lasers and amplifiers?

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