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IPDiA presents the first 100 GHz measurement results of Silicon Capacitor for Xtreme Broadband and

MEDIA ADVISORY

17 March 2016

Contact:
Laëtitia OMNES
+33 231 5354 06
laetitia.omnes@ipdia.com

IPDiA presents the first 100 GHz measurement results of Silicon Capacitor for Xtreme Broadband and Microwave Applications

IPDiA, world leader in silicon passive components, is continually looking for ways to improve the performances for optical and microwave systems by developing new technologies and design methodologies. IPDiA is pleased to present the first measurements showing superior performance from few 10 kHz to 100 GHz+ compared with current technologies.
Main performances are:
  • Flat frequency response (Insertion Loss < 0.4 dB up to 60 GHz & < 1.2 dB up to 110 GHz);
  • Excellent return loss better than -20 dB;
  • Resonance free thanks to the capacitor single layer design of 50 µm thickness;
  • Zero piezoelectric effect and low dielectric absorption (0.05%), at least 12 times lower than ceramic capacitors;
  • Ultra low electrical variation over voltage and temperature (lower than 1%);
 
IPDiA technology offers a high capacitance value of 10 nF in a 100 µm 0201 SMT (0.6x0.3 mm).
 
Symbol Parameter Conditions Min. Typ. Max Unit
C Capacitance value @25°C - 10 - nF
DCp Capacitance tolerance @25°C -15 - 15 %
RVDC Rated voltage   - 3.6 - VDC
BV Breakdown voltage   11 - - V
TOP Operating temperature   -55 20 150 °C
DCT Capacitance temperature variation -55°C to +150°C -24 0 24 ppm/°C
DCRVDC Capacitance voltage variation From 0V to RVDC - - 0.1 %/VDC
IL Insertion Loss @20GHz - - 0.2 dB
@40GHz - - 0.3
@60GHz - - 0.4
@100GHz - - 1
RL Return Loss Up to 100GHz -20 - - dB
ESR Equivalent Serial Resistance @25°C - 300 - mΩ
ESL Equivalent Serial Inductance @25°C & SRF - 100 - pH
 
Preliminary electrical performances of a 10 nF – specific 0201M Silicon capacitor


Preliminary frequency response in transmission mode of a 10 nF – specific 0201M Silicon capacitor

 
 
 
 
 

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