The Optical Networking and Communication
Conference & Exhibition

Los Angeles Convention Center,
Los Angeles, California, USA

Integrated Photonics


Sunday, 20 March

Monday, 21 March

Tuesday, 22 March

Wednesday, 23 March

Thursday, 24 March


Registration 8:00AM –
7:30AM –
7:30AM –
7:00AM –
7:30AM –

Plenary Talk

Silicon Photonics and Quantum Dot Lasers     8:00AM –


III-IV vs Silicon Photonics Transceivers: Competition or Coexistence? 3:30PM –
Do Photonic Foundries Deliver What Users Really Need and Can They Ever Become Sustainable   9:00AM –

Technical Sessions

Microwave Photonic Integration   1:30PM –
Hybrid Lasers & Transmitters   1:30PM –
Photonic Coupling   1:30PM –
Switching Devices   4:00PM –
High-speed Detectors     2:00PM –
Wavelength Filtering     2:00PM –
High-speed Transmitters     4:30PM –
Advanced Waveguides     4:30PM –
Photonic Systems       8:00AM –
Attojoule Optoelectronics       9:00AM –
Indium Phosphide Photonic Integrated Circuits       3:30PM –
Switches and Optical Signal Processing Devices         8:00AM –
Silicon Photonics for Datacom         8:00AM –
Resonators         8:00AM –
Spatial Mode Multiplexing         1:00PM –
Advanced Modulation for Data Center Interconnects III         1:00PM –
Silicon Photonics I         1:00PM –
Silicon Photonics II         3:30PM –

Short Courses (Registration Fee Required)

High-Speed Semiconductor Lasers and Modulators 9:00AM –
Optical Interconnects for Extreme-scale Computing 1:00PM –
Photodetectors for Optical Communications 1:00PM –
Silicon Microphotonics: Technology Elements and the Roadmap to Implementation 5:00PM –
Hands on: Silicon Photonics Design & Fabrication   8:30AM –
Highly Integrated Monolithic Photonic Integrated Circuits   8:30AM –
Photonic Technologies in the Datacenter   1:30PM –
Microwave Photonics   2:00PM –

Plenary Speaker

Yasuhiko Arakawa
Talk: Silicon Photonics and Quantum Dot Lasers
The evolution of computing systems is indispensable for realizing both cloud computing and autonomous distributed (edge) computing technologies in the future cyber physical society (CPS). Within 20 years, we need to develop supercomputers that can fit in the palm of our hand. Currently the CPU-to-CPU/CPU-to-memory inter-chip bandwidths in PC and servers double every two years and are expected to reach ~10 Tb/s by the end of the 2010s. Electrical interconnects do not scale well to meet such bandwidths. Optical interconnects may solve this bandwidth bottleneck problem, as photons can provide wide bandwidth, low latency, low power consumption, and low mutual interference.
In this presentation we discuss optical interconnects, emphasizing recent advances in silicon photonics and quantum-dot lasers. Advantages of silicon photonics are low cost, high yield, small size, and compatibility with electronics; and advantages of quantum-dot lasers are temperature stability and feedback-noise tolerance.



III-V Vs Silicon Photonic Transceivers: Competition or Coexistence?
Sunday, 20 March, 3:30 PM - 6:30 PM
Room: Ballroom A

Michael Larson, Lumentum, USA; Beck Mason, Oclaro, USA

Silicon photonics is an important new technology that is challenging the position of traditional III-V devices as the preeminent photonic technology for fiber optic transceivers.   Silicon photonics  has fundamental materials limitations compared to III/Vs but huge advantages in terms of technology infrastructure, scalability and electronic integration.  Will silicon come to dominate high volume low-cost transceiver applications, relegating III/Vs to low volume high performance niches or will improved electronic integration and packaging technologies enable III/V’s to maintain their leadership position?  What technical and economic factors play to each approach’s strengths and weaknesses?   How will these differentiators affect the competitive balance across datacenter, enterprise and traditional telecom markets?  This workshop will bring spirited debate to the above and related topics.

Chris Cole, Finisar, USA
Yuliya Akulova, Lumentum, USA

Do Photonic Foundries Deliver what Users really need and can they ever become Sustainable?
Monday, 21 March, 9:00 AM - 12:00 PM
Room: Ballroom B

Po Dong, Alcatel Lucent Bell Labs, USA; Piero Gambini, STMicroelectronics, Italy

IC industries largely benefit from the foundry model, which allows fabless companies to avoid costs of owning expensive fabrication facilities, while merchant foundries get their facilities fully utilized. The recent development of photonic ICs advocates for a photonic IC foundry model – indeed one of the most cited benefits of silicon photonics is the availability of foundries. However, as photonic and electronic ICs are fundamentally different regarding applications, volumes, complexity of circuits, there are many unresolved challenges to be faced in realizing a sustainable photonic foundry model. This workshop will review the role and operation of photonic foundries, and discuss future directions. Questions that this workshop may raise include:

  1. Are photonic foundries already available for silicon photonic or III-V products?
  2. How could users differentiate their products using common foundries?
  3. Is the volume for optical products enough to justify the foundry model?
  4. Will photonic foundries be capable of providing the industrialization services required for mass production?
  5. Will a universal photonic foundry, integrating III-V with silicon photonics and even ICs and MEMS, ever be possible?
  6. How will foundries deal with IP issues?

Karen Liu; Kaiam Corp., USA
Katarzyna Ławniczuk; Technical University Eindhoven, The Netherlands
Joris Van Campenhout; IMEC, Belgium
Patrick Lo Guo-Qiang; IME / A∗STAR, Singapore
Laura Formenti; STMicroelectronics, Italy
Ted Letavic; Global Foundries, USA
Lars Zimmerman; IHP - Innovations for High Performance Microelectronics, Germany
Tohru Mogami; Petra, Japan



Microwave Photonic Integration  

Monday, 21 March, 1:30PM-3:30PM               
Room: 303B

Considerations and Application Opportunities for Integrated Microwave Photonics (M2B.1)
1:30 PM-2:00 PM              Invited Submission
Vincent Urick, US Naval Research Laboratory, USA
Integrated microwave photonics has become a topic of considerable research, due in part to the breakthroughs in photonic integrated circuits for industrial telecommunications. A critical assessment of this trend is presented, including important considerations that are lacking in the emerging integrated microwave photonics community

Electrical injection locking of a fully integrated photonic integrated circuit based heterodyne source (M2B.2)      
2:00 PM-2:15 PM  Contributed Submission          
Frederic Van Dijk, III-V Lab, France

We report the stabilization of a 5 GHz signal generated from a fully integrated heterodyne photonic source using only optoelectronic elements integrated in the photonic circuit and an external electrical sub-harmonic RF reference.

Optical wireless data transfer enabled by a cascaded acceptance optical receiver fabricated in an InP membrane platform (M2B.3)   
2:15 PM-2:30 PM              Contributed Submission              
Xinran Zhao, Eindhoven University of Technology, Netherlands
Utilizing an InP membrane based cascaded acceptance optical receiver (CAO-Rx), we demonstrate 17.4Gbps optical wireless transmission in C-band. By separating light collection and opto-electrical conversion, CAO-Rx provides better optical efficiency and electrical bandwidth simultaneously.

Silicon Photonics for Microwave Photonics Applications (M2B.4)
2:30 PM-3:00 PM              Invited Submission         
Lawrence Chen, University of Sydney, Australia
Microwave photonic filters tunable up to 30 GHz are realized on a chip using stimulated Brillouin scattering. Tailoring of the pump allows bandwidth reconfigurability from 50MHz to 440MHz with a pass band ripple of <2dB.

On-chip tunable microwave photonic filters with a reconfigurable bandwidth of up to 440 MHz (M2B.5)
3:00 PM-3:15 PM              Contributed Submission              
Amol Choudhary, University of Sydney, Australia
Microwave photonic filters tunable up to 30 GHz are realized on a chip using stimulated Brillouin scattering. Tailoring of the pump allows bandwidth reconfigurability from 50MHz to 440MHz with a pass band ripple of <2dB.

Silicon-Based On-Chip Microdisk Resonators for Integrated Microwave Photonic Applications (M2B.6)
3:15 PM-3:30 PM              Contributed Submission              
Weifeng Zhang, University of Ottawa, Canada
We report two novel on-chip microdisk resonators exhibiting a single whispering-gallery-mode operation. By weakening the interaction between the confined light and the sidewalls, the Q-factor is elevated. Their applications in integrated microwave photonics is discussed          


Hybrid Lasers & Transmitters

Monday, 21 March, 1:30PM-3:30PM

Room: 303C       

Dual Hybrid Silicon-Photonic Laser with Fast Wavelength Tuning (M2C.1)
1:30 PM-1:45 PM              Contributed Submission              
Guilhem de Valicourt, Alcatel-Lucent, France
We designed and fabricated a fast-wavelength-tunable hybrid laser diode using two selectable silicon photonic Vernier ring-based cavities. Single mode operation (SMSR > 30 dB) over more than 35 nm and switching speed of 35 ns are demonstrated.   

Alignment and Integration of a Hybrid, External-Cavity InP-SOI Laser (M2C.2)
1:45 PM-2:00 PM              Contributed Submission              
Ivan Shubin, Oracle, USA
A 1550nm external-cavity hybrid III-V/SOI laser with a room-temperature threshold current of 18mA and output powers up to 4mW was demonstrated with a novel assembly technique. An edge-coupled 1x6 laser array was passively aligned with sub-micron positional tolerance.                                 

Rethinking, and redesigning, the Semiconductor Laser— A new Paradigm for Narrow Linewidth (M2C.3)
2:00 PM-2:30 PM              Invited Submission
Amnon Yariv,     California Institute of Technology, USA
We demonstrate, theoretically and experimentally , a new design paradigm which results in over three orders of magnitude reduction in the spectral linewidth of the SCL compared to commercial lasers now deployed.              

A Novel Transmitter Leveraging High-Speed Ultralow-Power Modulation of a Si Microring Modulator by Eliminating Tuning Power (M2C.4)  
2:30 PM-2:45 PM              Contributed Submission              
Tomoyuki Akiyama, PETRA, Japan
We propose a novel transmitter having a Si microring modulator, and demonstrate a capability to eliminate most of ring tuning power, a dominant driver of energy consumption in microring-based transmitters, while preserving high-speed ultralow-power modulation.

50km Error Free Transmission of Fully Integrated Chirp-Managed 10Gb/s Directly Modulated C-band Tunable III-V/SOI Hybrid Lasers        (M2C.5)
2:45 PM-3:00 PM              Contributed Submission                              
Guillaume Levaufre, Alcatel-Lucent, France.
We designed and fabricated a fast-wavelength-tunable hybrid laser diode using two selectable silicon photonic Vernier ring-based cavities. Single mode operation (SMSR > 30 dB) over more than 35 nm and switching speed of 35 ns are demonstrated.                   

PAM-4 and Duobinary Direct Modulation of a Hybrid InP/SOI DFB Laser for 40 Gb/s Transmission over 2 km Single Mode Fiber (M2C.6)
3:00 PM-3:15 PM              Contributed Submission
Amin Abbasi INTEC, University of Ghent_Imec, Ghent, Belgium.
We demonstrate 40 Gb/s PAM-4 and Duobinary direct modulation of a heterogeneously integrated InP on SOI DFB laser. Transmission measurement was performed using a 2 km NZ-DSF with a PRBS 215 and 1.5 Vpp swing voltage.                               

Transmission Over 50km at 10Gbs/s with a Hybrid III-V on Silicon Integrated Tunable Laser and Electro-absorption Modulator (M2C.7)
3:15 PM-3:30 PM              Contributed Submission
Xavier Pommarede, III-V lab, France
We demonstrate a tunable transmitter, integrating a III-V/Si laser and electro-absorption modulator. This transmitter exhibits a 10nm wavelength tunability and shows error free transmission up to 50km at 10.3Gb/s.                   



Photonic Coupling

Monday, 21 March, 1:30PM-3:30PM

Room: Ballroom C

ContactLess Integrated Photonic Probe: Concept, Technology and Applications (M2I.1)
1:30 PM-2:00 PM              Invited Submission
Francesco Morichetti,  Politecnico di Milano, Italy.
We report on our recent achievements on the development of an integrated in-line transparent detector (CLIPP), enabling non-invasive on-chip monitoring of the light and robust feedback controlled schemes for high complexity photonic integrated circuits                                        

Optical Coupling between Polymer Waveguides and a Silicon Photonics Chip in the O-band (M2I.2)
2:00 PM-2:15 PM              Contributed Submission
Bert Jan Offrein, IBM Research - Zurich, Switzerland.
We present a silicon photonics optical I/O interfacing solution based on adiabatic optical coupling between silicon and polymer waveguides. A transition loss of 0.9 dB and back-reflection < -45 dB were found at 1310 nm                                             

A Metamaterial Converter Centered at 1490nm for Interfacing Standard Fibers to Nanophotonic Waveguides (M2I.3)
2:15 PM-2:30 PM              Contributed Submission
Tymon Barwicz, IBM TJ Watson Research Center, USA
We present data with both manual probing and self-aligned 12-fiber automated assembly. We find a peak transmission efficiency of -1.6 dB and a Fabry-Perot oscillation on one polarization induced by a mask layout misstep               

Subwavelength Gratings for Broadband and Polarization independent Fiber-chip Coupling with -0.4 dB Efficiency (M2I.4)
2:30 PM-2:45 PM              Contributed Submission              
Jens Schmid, National Research Council of Canada, Canada.
We experimentally demonstrate a subwavelength refractive index engineered nanostructure for edge coupling, enabling a coupling efficiency of -0.4 dB and polarization independent operation for a broad spectral range exceeding 100 nm.                         

Ultra-Efficient CMOS Fiber-to-Chip Grating Couplers (M2I.5)
2:45 PM-3:00 PM              Contributed Submission              
Jelena Notaros, University of Colorado Boulder, USA
Apodized bi-level fiber-to-chip grating couplers, designed using a complex-wavevector band-structure approach, are demonstrated in a commercially available, monolithic SOI CMOS process achieving 92% (-0.36dB) coupling efficiency.

Low-loss and misalignment-tolerant fiber-to-chip edge coupler based on double-tip inverse tapers (M2I.6)
3:00 PM-3:15 PM              Contributed Submission              
Jing Wang, Huawei Technologies Co., Ltd., China
A novel fiber-to-chip edge coupler with two tapered tips and a multimode interference combiner is demonstrated on a silicon-on-insulator platform. It has advantages over a single-tip edge coupler on coupling loss, bandwidth and misalignment tolerance.                              

Multi-Chip Integration by Photonic Wire Bonding: Connecting Surface and Edge Emitting Lasers to Silicon Chips (M2I.7)
3:15 PM-3:30 PM              Contributed Submission
Tobias Hoose, Karlsruhe Institute of Technologie, Germany
We demonstrate coupling of surface and edge emitting InP lasers to silicon photonic chips using photonic wire bonding. We confirm that back-reflections from the silicon chip do not deteriorate the linewidth of the lasers.


Switching Devices

Monday, 21 March, 4:00PM-6:00PM

Room: Ballroom C

CMOS Photonic Nanosecond-Scale Switch Fabrics (M3I.1)
4:00 PM-4:30 PM              Invited Submission         
Nicolas Dupuis, IBM T. J. Watson Research Center, USA
We review our nanosecond-scale switch technology in IBM’s 90nm photonics-enabled CMOS process. We present low-insertion-loss, low-crosstalk, and low-power broadband optical switch fabrics that monolithically integrate the photonics with the CMOS electronics.

Investigation of Dynamic Optical Crosstalk Performance of a Large-Scale 3D MEMS Optical Circuit Switch (M3I.2)
4:30 PM-4:45 PM              Contributed Submission
Lin Liu, Calient Technologies, USA
A detailed investigation of optical dynamic crosstalk of a large-scale 3D MEMS optical circuit switch is reported. The worst-case dynamic crosstalk has been theoretical calculated and experimentally measured on a 385×385 OCS.

61 Port 1×6 Selector Switch for Data Center Networks (M3I.3)
4:45 PM-5:00 PM              Contributed      
William Mellette, University of California San Diego, San Diego, CA, United States
We present design and preliminary characterization of a scalable MEMS-based “selector switch” for high performance computing networks. The 170 µs, 61-port prototype uses relay image steering to route all 61 SMF channels through one of six pre-structured interconnects.

Ultra-broadband low-loss 2×2 MZI (Mach-Zehnder interferometer)-based thermo-optic switch with bent directional couplers on silicon (M3I.4)
5:00 PM-5:15 PM              Contributed Submission              
Daoxin Dai, Zhejiang University, China.
A low-loss and broadband silicon-based thermo-optic Mach-Zehnder switch (MZS) is proposed and demonstrated with 2×2 3dB bent directional-couplers. The demonstrated MZS has a ~140nm bandwidth for excess loss of <1dB and extinction ratio of >20dB.

Liquid Crystal Waveguide Switch for Fast Fiber Optic Sensor Monitoring (M3I.5)
5:15 PM-5:30 PM Contributed Submission           
Florenta Costache, Fraunhofer IPMS, Germany.
A 1×2 liquid crystal waveguide switch with low optical loss, < 0.5 dB PDL and sub-microsecond switching time was designed and fabricated. This switch can allow fast channel selection in FBG sensor interrogators.

Novel PILOSS Port Assignment for Compact Polarization-Diversity Si-Wire Optical Switch (M3I.6)
5:30 PM-5:45 PM              Contributed Submission
Ken Tanizawa, Natl Inst of Adv Industrial Sci & Tech, Japan
We propose a bidirectional use of all the ports of a single path-independent-insertion-loss switch for polarization diversity. A polarization-insensitive Si-wire thermooptic 4×4 switch is achieved without duplicating the switch.                     

Athermal and wavelength-trimmable silicon MZI (M3I.7)
5:45 PM-6:00 PM Contributed Submission           
Jong-Moo, Electronics and Telecom Research Inst, Korea
CMOS-compatibly fabricated silicon athermal MZI is trimmed in wavelength by the amount from -0.15 to -5.15 nm using thermal annealing process over 400 °C. Temperature-dependence less than 2 pm/°C is maintained after the annealing.,  


High-speed Detectors

Tuesday, 22 March, 2:00PM-4:00PM

Room: 303D

56-Gbit/s 40-km Optical-amplifier-less Transmission with NRZ Format Using High-speed Avalanche Photodiodes (Tu2D.1)
2:00 PM-2:15 PM Contributed Submission
Masahiro Nada, NTT Device Technology Laboratories, Japan
We present the world’s first demonstration 56-Gbit/s 40-km transmission with NRZ format using a high-speed avalanche-photodiode-based optical receiver. The receiver exhibited a minimum sensitivity of -20.8 dBm after 40-km transmission at the BER of 2.3×10-4.

Breakthrough of 25Gb/s Germanium on Silicon Avalanche Photodiode   (Tu2D.2)
2:15 PM-2:30 PM              Contributed Submission              
Dong Pan, SiFotonics Technologies Co., Ltd., USA
Our germanium on silicon avalanche photodiodes (Ge/Si APDs) show a 1310nm sensitivity of -22.5dBm at 25.78Gb/s, which is, to our knowledge, the best sensitivity in reported 25Gb/s avalanche photodiodes.                       

High-Power Waveguide Integrated Modified Uni-Traveling-Carrier (UTC) Photodiode with 5 dBm RF Output Power at 120 GHz (Tu2D.3)
2:30 PM-2:45 PM              Contributed Submission
Gan Zhou, Fraunhofer Heinrich-Hertz-Institut, Germany.
We demonstrated a monolithic InP-based high-power high-speed waveguide integrated modified UTC photodetector. The chip delivers maximum RF output power levels of 8.9dBm to 5.1dBm in the frequency range between 60GHz and 120GHz.

GaAs0.5Sb0.5/InP UTC-PD with Graded-Bandgap Collector for Zero-Bias Operation at Sub-THz Regime (Tu2D.4)
2:45 PM-3:00 PM              Contributed Submission
Jhih-Min  Wun, National Central University, Taiwan
By using type-II absorption-collector interface and graded-bandgap collector in UTC-PDs for zero-bias operation, such photodiode achieves record 3-dB O-E bandwidth (140 GHz) and sub-THz output power (-13.9dBm at 160GHz) among all the reported zero-bias photodiodes.

Polarisation Insensitive Coherent Receiver PIC for 100Gbaud Communication (Tu2D.5)
3:00 PM-3:15 PM              Contributed Submission              
Gan Zhou, Fraunhofer Institut, Germany.
We demonstrate an InP-based receiver PIC with a 90° hybrid and balanced pin-photodiodes. The detector chip has an excellent responsivity, an electrical bandwidth of 90GHz and a phase error below 5° for TE and TM over the entire C-band

-1 V Bias 56 Gbps Germanium Waveguide p-i-n Photodetector with Silicon Contacts (Tu2D.6)
3:15 PM-3:30 PM              Contributed Submission              
Hongtao CHEN,                 3D and Optical Technology, Belgium.
We demonstrate a silicon-contact-only 56 Gbps germanium waveguide photodetector operating at -1 V. The dark current is below 4 nA and the responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm.


A High-Speed Photodetector for Telecom, Ethernet, and FTTH Applications in Zero-change CMOS Process (Tu2D.7)
3:30 PM-3:45 PM              Contributed Submission              
Amir Atabak, Massachusetts Institute of Technology, USA
A high-speed photodetector based on absorption by the defect states in transistor gate polysilicon is demonstrated with 0.14-0.2 A/W responsively in 1310-1610 nm and 10 GHz bandwidth in an unmodified 45 nm SOI CMOS process               


Zero-Change CMOS Photodiode with 0.44 A/W Responsivity  (Tu2D.8)
3:45 PM-4:00 PM              Contributed Submission              
Luca Alloatti, MIT, USA
A photodiode with 0.44 A/W has been fabricated in the Global Foundries 45 nm 12SOI process –a twenty times increase over previous results. The photodiode consists of a ring-resonator with ring-shaped silicon-germanium


Wavelength Filtering

Tuesday, 22 March, 2:00PM-4:00PM

Room: 304C

Multi-channel wavelength/mode-division-multiplexers on silicon (Tu2F.1)
2:00 PM-2:30 PM              Invited Submission
Daoxin Dai, Zhejiang University, China
Recent progresses for compact silicon-based wavelength/mode-division-multiplexers are reported. Hybrid (de)multiplexers with multiple wavelengths, dual-polarizations, as well as multiple mode are also discussed to enable many channels for high-capacity optical interconnects.

Towards Energy-Efficient CMOS-Backend Compatible Photonic Circuits  (Tu2F.2)
2:30 PM-2:45 PM              Contributed Submission              
Timo Lipka, Hamburg University of Technology, Germany
We present energy-efficient optical add/drop multiplexers based on low-loss a-Si:H. The power for non-uniformity compensation is studied and the reduction by trimming is analyzed, resulting in record low metrics of sub-1mW consumption per 8-channel multiplexer.    

Passive Athermal Silicon Ring Resonators with Sol-Gel Claddings (Tu2F.3)
2:45 PM-3:00 PM              Contributed Submission
Soha Namnabat, University of Arizona, USA
Silicon ring resonators have high thermal sensitivity of about 0.1 nm/°C. Using sol-gels as cladding material we show that sensitivity can be reduced down to 2 pm/°C within the temperature range from 12 °C to 40 °C.

Programmable Multi-Ring Butterworth Filters with Automated Resonance and Coupling Tuning (Tu2F.4)
3:00 PM-3:15 PM              Contributed Submission
Jason Mak, University of Toronto, Canada
We demonstrate a bandwidth and wavelength programmable silicon double microring optical filter that can be automatically, accurately, and repeatably set to an optimal Butterworth shape. The method automatically compensates for fabrication variations and thermal crosstalk.                

Compact Silicon Photonic Interleaver Using Loop-Mirror-Based Michelson-Gires-Tournois Interferometer (Tu2F.5)
3:15 PM-3:30 PM              Contributed Submission
Jiang Xinhong, Shanghai Jiao Tong University, China
A compact (125 μm × 376 μm) silicon photonic interleaver is proposed and experimentally demonstrated using loop-mirror-based Michelson-Gires-Tournois interferometer. The 3-dB and 20-dB bandwidths of the passband are ~1.245 nm and ~1.709 nm, respectively.                        

Voltage Tunability and Polarization Diversified Operability (Tu2F.6)
3:30 PM-3:45 PM              Contributed Submission
Seok-Hwan Jeong, Photonics Electronics Technology Research Association (PETRA), Japan
We report novel Si-wire optical DeMUX technologies required for large manufacturing tolerance, low-voltage wavelength tunability and polarization diversified operability. These technologies could be practical building blocks for WDM integrated transceivers.                           

O-band Silicon Photonic Bragg-Grating Multiplexers Using UV Lithography  (Tu2F.7)
3:45 PM-4:00 PM              Contributed Submission
Jonathan St-Yves, Universite Laval, Canada
We demonstrate the first Bragg-grating-based 4-channel O-band (de-)multiplexer fabricated using 193nm lithography on submicron-SOI with small features below 140nm.                             



High Speed Transmitters

Tuesday, 22 March, 4:30PM-6:30PM

Room: 303D

High Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs (Tu3D.1)
4:30 PM-4:45 PM Contributed Submission                           
Andrei Caliman, LPN/EPFL, Switzerland.
25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity.

50 Gb/s Error-Free Data Transmission of 850 nm Oxide-Confined VCSELs (Tu3D.2)
4:45 PM-5:00 PM              Contributed Submission              
Michael Liu, University of Illinois at Urbana-Champaign, USA
50 Gb/s error-free data transmission and a -3-dB modulation bandwidth of 28.2 GHz are reported for high speed 850 nm oxide-confined VCSELs fabricated with an as-grown epitaxial structure without post-fabrication tuning of the photon lifetime.                              

Strong Enhancements in Static/Dynamic Performances of High-Speed 850 nm Vertical-Cavity Surface-Emitting Lasers with P-type δ-Doping in Highly Strained Active Layers     (Tu3D.3)
5:00 PM-5:15 PM              Contributed Submission
Kai-Lun  Chi, Dept. of EE, National Central University, Taiwan
By using p-type modulation doping in the highly strained MQWs of high-speed 850 nm VCSELs, significant enhancements in speed, slope efficiency, and maximum power have been simultaneously achieved as compared to those of un-doped references                              

Single-Mode 1.5-µm VCSELs with 22-GHz Small-Signal Bandwidth (Tu3D.4)
5:15 PM-5:30 PM              Contributed Submission
Silvia Spiga, Walter Schottky Institut, Germany
We demonstrate an ultra-short cavity 1.5-µm single-mode directly-modulated VCSELs with record modulation bandwidth of 22 GHz at room temperature operation.

Volume Manufacturable High speed 850nm VCSEL for 100G Ethernet and Beyond (Tu3D.5)
5:30 PM-6:00 PM              Invited Submission         
Laura Giovane, Avago Technologies, USA
This paper reviews the technology used to enable commercial deployment of VCSELs at 25-28G and some of the device challenges that need to be addressed to enable the next generation of data rates.                          

2 2 x 56 GB/s from a Double Side Electroabsorption Modulated DFB Laser (Tu3D.6)
6:00 PM-6:15 PM Contributed Submission
Michael A. Theurer, Fraunhofer Heinrich Hertz Institute, Germany.
We present a novel DFB laser with electroabsorption modulators at both sides. This device generates 56 Gb/s NRZ from each side and thus cuts the number of required chips for multilane applications in half.

50Gb/s C-band GeSi Waveguide Electro-Absorption Modulator (Tu3D.7)
6:15 PM-6:30 PM              Contributed Submission
Ashwyn Srinivasan, Imec, Belgium
We report C-band waveguide-integrated GeSi electro-absorption modulators with 3dB-bandwidth beyond 50GHz. The DC extinction ratio is 4.2±0.3dB with 4.4±0.6dB insertion loss and the dynamic extinction ratio is 3.0dB at 50Gb/s NRZ-OOK with a 2V swing.                  


Advanced Waveguides

Tuesday, 22 March, 4:30PM-6:30PM
Room: 304B

Post-fabrication Trimming of Silicon Photonics Circuits by fs Laser Pulses (Tu3E.1)
4:30 PM-5:00 PM              Invited Submission
Daniel Bachman, University of Alberta, Canada
Single femtosecond laser pulses are used to permanently change the effective index of silicon waveguides. The mechanism provides a fast, robust technique for post-fabrication tuning of silicon photonic circuits at the wafer level.    

High-Extinction-Ratio and Fabrication-Tolerant Polarization Beam Splitter based on Grating-Assisted Contradirectional Couplers (Tu3E.2)
5:00 PM-5:15 PM              Contributed Submission
Yong Zhang, Shanghai Jiao Tong University, China
A fabrication-tolerant polarization beam splitter (PBS) based on grating-assisted contradirectional couplers is experimentally demonstrated. Over 30-dB extinction ratios are achieved for both polarizations. Large fabrication tolerance in coupling length is also verified.

Tri-layer, Vertical Y-junction, Si3N4/SiO2 3D Photonic Integrated Circuits with Arbitrary Splitting Ratio (Tu3E.3)
5:15 PM-5:30 PM              Contributed Submission
Kuanping Shang, University of California, USA
We design Si3N4 tri-layer vertical Y-junction with arbitrary splitting ratio and low
reflection, fabricate bi-layer asymmetric vertical coupler, and demonstrate tri-layer vertical Yjunction
with splitting ratio of 1:1 and 3:2 for multilayer photonic integrated circuits.

Design and Characterization of Ge Passive Waveguide Components on Ge-on-Insulator for Mid-Infrared Photonics (Tu3E.4)
5:30 PM-5:45 PM Contributed Submission
Jian Kang, University of Tokyo, Japan
We successfully demonstrate Ge passive components including grating couplers, MMI couplers, and micro-ring resonators on GeOI at 2-μm wavelength. We also reveal the thermo-optic coefficient in Ge strip waveguide is 6×10-4/°C, greater than in Si.                

An Ultra-compact Colorless 50:50 Coupler Based on PhC-like Metamaterial Structure (Tu3E.5)
5:45 PM-6:00 PM              Contributed Submission
Luluzi Lu, Huazhong Univ of Science and Technology, China
A novel PhC-like metamaterial structure with low fabricating accuracy requirements is proposed. We design and fabricate a 2.6μm×2.6μm coupler employing such structure. The measured excess loss of each port is less than 1dB over 60nm         

Mid-Infrared Silicon Photonics   (Tu3E.6)
6:00 PM-6:30 PM              Invited Submission         
Goran Mashanovich, University of Southampton, UK
A review of recent progress in three mid-infrared silicon photonics material platforms, silicon on insulator (SOI), suspended silicon and germanium on silicon, is presented. A range of passive and active devices have been reported.                  


Photonic Systems           

Wednesday, 23 March, 8:00AM-10AM

Room: 304B

The IPKISS Photonic Design Framework (W1E.1)
8:00 AM-8:30 AM             Invited Submission         
Wim Bogaerts, Universiteit Gent, Belgium
We present the IPKISS photonic design framework, which integrates tightly with the L-Edit layout tool. This close link between connectivity and layout allows automatic waveguide generation, adjust connectivity in layout, and verify with post-layout simulations.    

Wavelength Locking Platform for DML-based Multichannel Transmitter on a Silicon Chip (W1E.2)
8:30 AM-8:45 AM             Contributed Submission
Stefano Grillanda, Politecnico di Milano, Italy
We present a platform for the feedback control of a multichannel transmitter based on DML sources and a silicon photonic multiplexer and carver circuit. Automatic tuning and wavelength locking are demonstrated in about 150 ms.

Bandwidth Enhancement in Multimode Polymer Waveguides Using Waveguide Layout for Optical Printed Circuit Boards  (W1E.3)
8:45 AM-9:00 AM             Contributed Submission
Jian Chen, University of Cambridge, UK
Dispersion studies demonstrate that waveguide layout can be used to enhance the bandwidth performance of multimode polymer waveguides for use in board-level optical interconnects, providing >40 GHz.m without the need for any launch conditioning.                                       


Polarization Diverse Fine Resolution Photonic Spectral Processor (W1E.4)
9:00 AM-9:15 AM             Contributed Submission
Dan Marom, Hebrew University, Israel
We extend the functionality of our photonic spectral processor to operate over any input polarization state by introducing polarization diversity. Some of the expected and unexpected challenges are discussed, leading to ~1GHz resolution programmable filtering.

Dynamic and Static Optical Arbitrary Waveform Generation from Chip-Scale Heterogeneously Integrated InP/Si3N4 Module  (W1E.5)
9:15 AM-9:30 AM             Contributed Submission              
Chuan Qin, University of California Davis, USA
We demonstrate static and dynamic optical arbitrary waveform generation on a heterogeneously integrated Si3N4 AWG-InP modulator array-Si3N4 AWG chip-scale module. High contrast Si3N4 AWGs and nearly pure phase InP modulation provided high fidelity OAWG.

Multi-port Optical Switch Based on Silicon Photonics (W1E.6)
9:30 AM-10:00 AM           Invited Submission
Hitoshi Kawashima, Natl Inst of Adv Industrial Sci & Tech, Japan.
We review research progress on multiport optical switches based on silicon photonics, with a primary focus on our own 8×8, 32×32 PILOSS switches, polarization insensitivity and integration with electronics. Challenges and future prospects are discussed.             



Attojoule Optoelectronics (Tutorial)

Wednesday, 23 March, 9:00 AM-10:00 AM

Room: 303D

>25 Attojoule Optoelectronics – Requirements and Prospects for Low Energy Devices    (W1D.1)
David A. B. Miller, Stanford University, USA                                        
Continued scaling of information communication and processing requires continued reduction in energy per bit at ever increasing bandwidth density. With promising though challenging nanotechnology, optoelectronics offers many opportunities for future sub-femtojoule devices in integrated systems.



Indium Phosphide Photonic Integrated Circuits            

Wednesday, 23 March, 3:30PM-5:30PM

Room: Ballroom B

Advances in Integrated Widely Tunable Coherent Transmitters  (W4H.1)
3:30 PM-4:00 PM              Invited Submission
Yuliya Akulova, Lumentum, USA
We review recent advances in InP Photonic Integrated Circuits developed for cost-effective, compact, power efficient coherent transmitters.       
Monolithically integrated array of widely tunable laser sources for multispecies gas sensing applications (W4H.2)
4:00 PM-4:15 PM              Contributed Submission              
Sylwester Latkowski, Technische Universiteit Eindhoven, Netherlands
Monolithic integration of four widely tunable extended cavity lasers suitable for gas detection is presented. Each laser features a precise, grid-less tuning mechanism with a low-linewidth, single-mode output over a wide wavelength range of 74nm.              

Ultra-low Threshold Semiconductor Lasers (W4H.3)
4:15 PM-4:45 PM              Invited Submission         
Shinji Matsuo, NTT Device Technology Laboratories, Japan
A compact active region with a large optical confinement factor is essential for achieving a low-threshold-current laser, which is a key device for low-power-consumption optical links in datacom and computercom networks.                                
Synchronized Operation of a Monolithically Integrated AWG-based Multichannel Harmonically Mode-locked Laser  (W4H.4)
4:45 PM-5:00 PM              Contributed Submission
Songtao Liu, Institute of Semiconductors, CAS, Beijing, Beijing, China.
We report a novel AWG-based monolithically integrated multichannel mode-locked laser. Four wavelength channels output of synchronized nearly transform-limited pulse trains operating at the fifth harmonic repetition rate of 12.7 GHz was demonstrated under hybrid mode locking.             

European InP Photonic Integrated Circuit Foundry Platform Development (W4H.5)
5:00 PM-5:30 PM              Invited Submission         
Ronald Broeke Bright Photonics BV, Netherlands
A new era in photonic integration in InP commenced with the transition towards an open-access foundry model in Europe. It brings PIC-based product innovation and exploration of novel applications within reach of any organization.                     



Switches and Optical Signal Processing Devices               

Thursday, 24 March, 8:00AM-9:30AM

Room: 303C

In-line optical amplification for Si waveguides on 1x8 splitter and selector by flip-chip bonded InP-SOAs (Th1C.1)
8:00 AM-8:15 AM             Contributed Submission
Takeshi Matsumoto, Fujitsu Laboratories Ltd., Japan
We investigated hybrid-integration of InP semiconductor optical amplifier on silicon photonics chip using flip-chip bonding, and achieved in-line optical amplification of 10 dB. Silicon 1x8 splitter and selector are fabricated and operated with on-chip loss-compensation.                                         

16×16 Non-blocking Silicon Electro-optic Switch Based on Mach-Zehnder Interferometers (Th1C.2)
8:15 AM-8:30 AM             Contributed Submission
Lei  Qiao, Institute of Semiconductors CAS, China
A non-blocking 16×16 silicon electro-optic switch based on Benes network was demonstrated. The extinction ratios of the switch are 20.2∼29.8 dB. It consists of 56 MZI switch units, whose switching time are 1 nanosecond.


First 4×4 InP Switch Matrix Based on Third-Order Micro-Ring-Resonators (Th1C.3)
8:30 AM-8:45 AM             Contributed Submission              
Ripalta Stabile, Technische Universiteit Eindhoven, Netherlands.
A first of its kind InP switch circuit is implemented using a matrix of 4×4 third-order ring resonators. Broadband routing is demonstrated at 10Gbps and 20Gbps with a maximum power penalty of only 2.6dB.                                  

Error-Free All-Optical Wavelength Multicasting at 40 Gb/s on a Compact InP-based Chip (Th1C.4)
8:45 AM-9:00 AM             Contributed Submission Xiu Zheng, University of Electronic Science and Technology of China, China
40-Gb/s all-optical wavelength multicasting is demonstrated employing a compact InP-based chip consisting of semiconductor optical amplifiers, an arrayed-waveguide grating and delay interferometers. 2.5dB and 3.2dB power penalties for NRZ and RZ signals were achieved, respectively.

2D and 3D Heterogeneous Photonic Integrated Circuits (Th1C.5)
9:00 AM-9:30 AM             Invited Submission
S. J. Ben Yoo, University of California Davis, USA
This paper reviews 2D and 3D photonic integrated circuits and their applications in computing, networking, and signal processing. Various novel fabrication techniques leading to realization of chip-scale microsystems, and future prospects will also be discussed.              



Silicon Photonics for Datacom

Thursday, 24 March, 8:00AM-10:00AM

Room: 304C

100Gbps Silicon Photonics Tranceivers   (Th1F.1)
8:00 AM-8:30 AM             Invited Submission
Arlon Martin, Mellanox, USA
Abstract Not Available  

Demonstration of Optical Transmission at Bit Rates of up to 321.4Gb/s using Compact Silicon Based Modulator and Linear BiCMOS MZM Driver (Th1F.2)
8:30 AM-8:45 AM             Contributed Submission
Biljana Milivojevic, Cisco Optical GmbH, Germany.                                           
We have designed and tested a compact flip-chip assembly that combines the photonic and electrical functionality of a Silicon Photonic modulator and a SiGe BiCMOS MZM-driver. This forms the basis for low-cost advanced optical transceivers.

A 32Gb/s NRZ, 25GBaud/s PAM4 Reconfigurable, Si-Photonic MZM Transmitter in CMOS (Th1F.3)
8:45 AM-9:00 AM             Contributed Submission
Nan QI, Oregon State University, USA
A reconfigurable 4-channel 32Gb/s NRZ, or 2x25GBaud/s PAM4 Si-Photonic transmitter is designed entirely in CMOS, consisting of a CMOS driver wire-bonded to MZ modulators. Measurement results demonstrate optical eye diagrams with > 5dB extinction ratio and <11pJ/bit power efficiency. 

A 50Gb/s, 610fJ/bit Hybrid CMOS-Si Photonics Ring-based NRZ-OOK Transmitter (Th1F.4)
9:00 AM-9:15 AM             Contributed Submission
Michal Rakowski, imec, Belgium
A wire-bond packaged ring-based photonic transmitter with an asymmetric differential driver in 28nm CMOS is demonstrated operating at 50Gb/s with over 5dB dynamic extinction ratio and 610fJ/bit energy efficiency.           

Wavelength Locking of a Si Photonic Ring Transmitter using a Dithering-based OMA Stabilizing Feedback Loop (Th1F.5)
9:15 AM-9:30 AM             Contributed Submission
Saurabh Agarwal, IMEC, Belgium.
We demonstrate wavelength locking of a silicon ring modulator across 480pm laser wavelength drift using a drop-port OMA monitoring CMOS circuit and a dithering-based feedback loop at a settling speed of up to 380pm/s.

Optical Interconnect with Densely Integrated Plasmonic Modulator and Germanium Photodetector Arrays (Th1F.6)
9:30 AM-9:45 AM             Contributed Submission              
Claudia Hoessbacher, ETH Zurich, Switzerland.
We demonstrate the first chip-to-chip interconnect utilizing a densely integrated plasmonic Mach-Zehnder modulator array operating at 3×10Gbit/s. A multicore fiber provides a compact optical interface, while the receiver consists of germanium photodetectors.                               

25-Gbps error-free operation of chip-scale Si-photonics optical transmitter over 70oC with integrated quantum dot laser (Th1F.7)
9:45 AM-10:00 AM           Contributed Submission              
Kenichiro Yashiki, PETRA, Japan.
25-Gbps error-free operation of a Si-photonics-based optical transmitter over 70oC was achieved due to high-temperature characteristics of quantum dot lasers and a wider range of acceptable beam directions for coupling to MMF using grating couplers.                      




Thursday, 24 March, 8:00AM-10:00AM

Room: Ballroom E

Photonic Crystal Cavities (Th1K.1)
8:00 AM-9:00 AM             Tutorial
Susumu Noda,  Kyoto University, Japan
I will review progresses and applications of photonic-crystal cavities, (1)nanocavities with a very small volume of cubic wavelengths, whose highest Q factor now exceeds 10,000,000, and (2)broad-area cavities based on band-edge resonant effects. Both cavities enable unprecedented manipulation of photons.

Silicon microring isolator with large optical isolation and low loss (Th1K.2)
9:00 AM-9:15 AM            Contributed Submission
Duanni Huang, UC Santa Barbara, USA
For the first time, an ultra-compact integrated isolator without use of permanent magnets is designed and fabricated by bonding Ce:YIG on a silicon microring. Record isolation of 32dB and low 2.3dB excess loss were achieved.           

Polarization Diversity Silicon Microring Resonator for WDM Add-Drop Filtering (Th1K.3)
9:15 AM-9:30 AM             Contributed Submission
Hao Hu, DTU Fotonik, Technical University of Denmark, Denmark.
We have demonstrated a polarization-diversity silicon microring resonator with a low PDL of <1 dB, which is successfully used for polarization independent ADD/DROP of a 10 Gbit/s channel in a 10 λ × 10 Gbit/s WDM signal.                                               

A Tunable Hybrid III-V-on-Si MOS Microring Resonator with Negligible Tuning Power Consumption (Th1K.4)
9:30 AM-9:45 AM             Contributed Submission              
Di Liang , Hewlett Packard Labs, USA
We demonstrate a novel hybrid microring resonator with an integrated III-V-on-Si metal-oxide-semiconductor (MOS) capacitor structure for essentially zero-power resonance tuning. Over 1,000,000,000 times better tuning efficiency than conventional thermal tuning approach has been achieved.

Record high-Q optical bandpass filter based on the EIT-like effect between two microrings (Th1K.5)
9:45 AM-10:00 AM           Contributed Submission
Hongchen Yu, Tsinghua University, China
A bandpass filter with a record high-Q of approximately 80 million is proposed, based on the electromagnetic-induced-transparency (EIT)-like effect in TM mode, which is the highest Q of the ever published integrated bandpass filters               


Spatial Mode Multiplexing        

Thursday, 24 March, 1:00PM-3:00PM

Room: 304B

Spatial and Planar Optical Circuit (Th3E.1)
1:00 PM-1:30 PM              Invited Submission
Kenya Suzuki, NTT Device Technology Laboratories, NTT Corporation, Japan.
We describe an optics system that takes advantage of free space optics and waveguide optics. It offers attractive features for ROADM devices such as optical filters, tunable optical impairment compensators, and wavelength selective switches.

Direct 3D nanoprinting on fiber tip of collimating lens and OAM mode converter in one compound element (Th3E.2)
1:30 PM-1:45 PM              Contributed Submission
Israel Weiss, Hebrew University of Jerusalem, Israel
We utilize 3D nano printing process with two photon polymerization directly on optical fiber tip. A collimating lens with added azimuthal phase is used in attempt to generate free space OAM mode beam.                           

Demonstration of an Ultra-Compact Photonic Integrated Orbital Angular Momentum Emitter with a Bragg grating Silicon Microring (Th3E.3)
1:45 PM-2:00 PM              Contributed Submission              
Fabrizio Gambini, Scuola Superiore Sant'Anna, Italy.
An orbital angular momentum beam emitter for wireless optical interconnects consisting of a Bragg grating integrated in a silicon 3.9µm-radius microring is experimentally demonstrated achieving a 3dB-bandwidth of 134 GHz and an efficiency up to 6.5%.

Thermo-Mechanical Analysis of a Cantilever Mode Converter Between Single-Mode Fiber and Si Waveguide (Th3E.4)
2:00 PM-2:15 PM              Contributed Submission
Esteban Marin, Corning Optical Communications, USA
We study temperature-induced stresses and misalignments in a cantilevered mode converter used to couple light between single-mode fiber and a PIC. We show that the design with UV-cured epoxy as index-matching clad exhibits higher stresses and larger displacements.                              

Mode Selective 10-Mode Multiplexer based on Multi-Plane Light Conversion (Th3E.5)
2:15 PM-2:30 PM              Contributed Submission
Guillaume Labroille, CAILabs, France.
We report a 10 spatial mode multiplexer based on the technique of Multi-Plane Light Conversion. The device shows average 4.4 dB insertion loss and 21 dB mode selectivity across the full C+L-band.

Mode filter based on graphene-embedded waveguide (Th3E.6)
2:30 PM-2:45 PM              Contributed Submission              
Zeshan Chang, City University of Hong Kong, Hong Kong.
We propose a graphene-embedded waveguide structure for spatial-mode-filtering applications. Our experimental demonstration with a graphene film placed in a polymer two-mode waveguide core achieves a mode extinction ratio over 20dB against the fundamental TE mode.

4-Channel All-Optical MIMO Demultiplexing on a Silicon Chip  (Th3E.7)
2:45 PM-3:00 PM              Contributed Submission
Francesco Morichetti, Politecnico di Milano, Italy.
We demonstrate a 4-channel silicon photonic MIMO demultiplexer performing all-optical unscrambling of four mixed modes. Real-time on-chip light monitoring through transparent detectors enables robust demultiplexing of 10 Gbit/s channels with less than -20 dB crosstalk.


Advanced Modulation for Data Center Interconnects III               

Thursday, 24 March, 1:00PM-2:30PM

Room: Ballroom A

Direct Measurement of Transverse Mode Correlation and Fiber-Enhanced RIN through MMF using 850nm VCSELs  (Th3G.1)
1:00 PM-1:15 PM              Contributed Submission              
Justin Lavrencik, Georgia Institute of Technology, USA
Cross-correlations between VCSEL transverse modes are synchronously observed and used to predict kmpn and dispersion dependent RIN. Experiments with MMF of different dispersion slope confirm importance of reach-dependent RIN currently neglected in the IEEE model.

180 Gbps PAM4 VCSEL Transmission over 300m Wideband OM4 Fibre (Th3G.2)
1:15 PM-1:30 PM              Contributed Submission
Reza Motaghian, Finisar, USA
Successful 180 (4x45) Gbps transmission is demonstrated over OM4 fibres using a 45-Gbps-PAM4 chip. Real time BERs<2e-4 were achieved for four SWDM grid channels in the 850-950nm wavelength range over 100m/200m/300m of wideband OM4 fibres.

28-Gb/s × 24-channel CDR-integrated VCSEL-based transceiver module for high-density optical interconnects (Th3G.3)
1:30 PM-1:45 PM              Contributed Submission
Kazuya Nagashima, Furukawa Electric Co., Ltd., Japan
We demonstrate a very high density 28-Gb/s × 24-channel CDR-integrated VCSEL-based optical transceiver module which achieves a very high data rate density of 1344 Gb/s/inch2(2.08 Gb/s/mm2) with a very low link power of 13.5 mW/channel/Gb/s.                       

DSP Free 56Gb/s ODB Generation Using Silicon Photonic Modulator with High Tolerance to CD and MPI (Th3G.4)
1:45 PM-2:00 PM              Contributed Submission              
Zhihong Li, FutureWei Technologies, USA
56Gb/s ODB signal is generated using 28G silicon photonic modulator, demonstrating 12dB better sensitivity than 56Gb/s NRZ format. High tolerance to dispersion and MPI effects are verified by numerical simulation or experiment without pre/post equalization. 

Components for 100G Coherent Pluggable Modules – CFP2 (Th3G.5)
2:00 PM-2:30 PM              Invited Submission         
Sunil Khatana,   Lumentum, USA
We review recent advances in components for coherent pluggable modules with focus on CFP2-ACO. Key requirement for these components are compact size, low power, low cost and richness in functionality.              



Silicon Photonics I

Thursday, 24 March, 1:00PM-3:00pm

Room: Ballroom D

Silicon Photonics: Silicon Nitride Versus Silicon-on-insulator (Th3J.1)
1:00 PM-1:30 PM              Invited Submission
Roel G. Baets, imec, Dept. of Information Technology, Photonics Research Group, Ghent University, Belgium.
Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. Silicon nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses the relative benefits of both platforms.                 

An Energy-Efficient 252 Gbit/s Silicon-Based IQ-Modulator (Th3J.2)
1:30 PM-1:45 PM              Contributed Submission               Stefan Wolf, Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology, Germany
With a silicon-based modulator we generate single-polarization 16QAM signals at symbol rates of 63 GBd (252 Gbit/s, 22 fJ/bit, BER = 4.1×10-3). The experiments show a path towards Si-based 500 Gbit/s dual-polarization single-wavelength transmitters.

3D Electro-Optical Integration Based on High-Performance Si Photonics TSV Interposer  (Th3J.3)
1:45 PM-2:00 PM              Contributed Submission              
Mingbin Yu, Institute of Microelectronics, Singapore
3D electro-optical integration based on a Cu-based Si-photonics TSV interposer has been demonstrated for integrated optical communication applications. The photonics TSV interposer consisting of monolithically integrated TSV, modulators and photodetectors, enabling a 30 Gbps-data-rate.

Wavelength Locked High-speed Microring Modulator Using an Integrated Balanced Homodyne CMOS Control Circuit (Th3J.4)
2:00 PM-2:15 PM              Contributed Submission
Shiyun Lin, Oracle Corporation, USA
We demonstrated wavelength locking for a high speed ring modulator using a low-power integrated balanced homodyne CMOS controller. Locking for wavelength change of 4 nm and substrate temperature change of 40°C was achieved.

Automatic Wavelength Tuning of Series-Coupled Vernier Racetrack Resonators on SOI  (Th3J.5)
2:15 PM-2:30 PM              Contributed Submission
Hasitha Jayatilleka, University of British Columbia, Canada
Using in-resonator photoconductive heaters to both sense and control the intra-cavity light intensity of microring resonators, automatic tuning of a silicon-on-insulator two-ring Vernier filter is demonstrated across the entire C-band.

Silicon Photonics Integrated 16-QAM Modulator Exploiting Only Binary Driving Electronics (Th3J.6)
2:30 PM-2:45 PM              Contributed Submission              
Vito Sorianello, TeCIP, Italy
A silicon photonics integrated reconfigurable nested Mach-Zehnder interferometer including tunable splitters and four independent phase modulators has been designed and fabricated. Thanks to the custom architecture, 16-QAM modulation is achieved with simple binary driving signals and successfully detected up to 20Gbaud with BER below the FEC level.     

Transmission of 50 Gb/s with a Dual Phase-Shift Bragg Grating Silicon Photonic Modulator  (Th3J.7)
2:45 PM-3:00 PM              Contributed Submission              
Sophie LaRochelle, Universite Laval, Canada
A Bragg grating SiP modulator operated at 50 Gb/s with BER below the FEC threshold is demonstrated using OOK modulation without equalization. To date, this work presents the fastest SiP modulator using Bragg gratings structures.


Silicon Photonics II

Thursday, 24 March, 3:30PM-5:15PM

Room:  Ballroom D

Monolithic Silicon Photonics at 25Gb/s   (Th4H.1)
3:30 PM-4:00 PM              Invited Submission
Jason  Orcutt, IBM Research, Yorktown Heights, USA
Monolithic CMOS photonics seeks to minimize total transceiver cost by simplifying packaging, design and test. Here we examine 25 Gb/s applications in the context of integrated transistor performance and demonstrate a 4λx25 Gb/s reference design.

Low-chirp Push-pull Microring Modulators  (Th4H.2)       
4:00 PM-4:15 PM              Contributed Submission
Chia-Ming Chang,            Alcatel-Lucent Bell Labs, USA
We experimentally demonstrate a new concept of low-chirp push-pull silicon microring modulator at 10 Gb/s. Differential drive of two microring modulators nested in a Mach-Zehnder interferometer balances the chirp from two ring modulators, resulting in very low chirp.                  

Depletion-Based Optical Modulators in a Bulk 65 nm CMOS Platform (Th4H.3)
4:15 PM-4:30 PM              Contributed Submission
Fabio Pavanello, University of Colorado at Boulder, USA
We present poly-silicon depletion-based optical modulators realized in a 65\,nm CMOS platform for monolithic integration with electronics. Speeds up to 12.5 Gbit/s can be achieved with 5 dB insertion loss and 2.3 dB extinction ratio.                    

50Gb/s Silicon Photonics Platform for Short-Reach Optical Interconnects (Th4H.4)
4:30 PM-5:00 PM              Invited Submission         
Marianna Pantouvaki, Interuniversity Microelectronics Center, Belgium.
We review a silicon photonics platform that integrates low-loss passive components with high-speed modulators and photodetectors operating at 50Gb/s from CMOS compatible voltages.       

Substrate Removed Silicon Mach-Zehnder Modulator for High Baud Rate Optical Intensity Modulations (Th4H.5 )
5:00 PM-5:15 PM              Contributed Submission              
Xi Xiao, Wuhan Research Inst of Post & Telecom, China.
We demonstrate a substrate-removed silicon Mach-Zehnder modulator with the 3-dB electro-optical bandwith beyond 50 GHz. Based on this modulator, 80 Gb/s on-off-keying and 50 Gbaud PAM-4 optical modulations are experimentally achieved without electrical pre-equlization.                        



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