The Optical Networking and Communication
Conference & Exhibition

Los Angeles Convention Center,
Los Angeles, California, USA

2017 Integrated Photonics (IP) Technical

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Session Title
Tuesday, 21 March
Wednesday, 22 March
Thursday, 23 March
Integrated Circuits for Signal Processing 2:00 PM - 4:00 PM    
Silicon Photonic Modulators 2:00 PM - 4:00 PM    
Photonic Packaging 4:30 PM - 6:30 PM    
Photonic/Electronic Integration and Packaging   8:00 AM - 9:45 AM  
Tunable Lasers and Transmitters   8:00 AM - 10:00 AM  
III-V / Silicon Integrated Devices   1:00 PM - 3:00 PM  
Photonic and Planar Switches   3:30 PM - 5:30 PM  
Indium Phosphide Photonic Integration   3:30 PM - 5:30 PM  
Silicon Photonics      8:00 AM - 10:00 AM
Gratings and Filters     8:00 AM - 10:00 AM
Practical Solutions to Tranceiver Integration     1:00 PM - 3:00 PM
Waveguide Devices     1:00 PM - 3:00 PM
Click on a session title to see the featured presentations.

Photonic Integrated Circuit for Optical Signal Processing (Tu2I.1)
02:00 PM - 03:00 PM     Tutorial Submission
Abstract not available.

80Gb/s PDM-QPSK PIC-to-PIC Transmission based on Integrated Hybrid Silicon/III-V Wavelength-tunable Transmitter and Monolithic Silicon Coherent Receiver (Tu2I.2)
03:00 PM - 03:15 PM     Contributed Submission
We reported the first hybrid III-V/Si integrated QPSK wavelength-tunable transmitter based on high-speed ring modulators (BW~23GHz). 80 Gbit/s PDM-QPSK signal transmission over 100 km with said integrated hybrid transmitter as well as a fully packaged silicon-based coherent receiver is demonstrated.

Dual-Core Polarization Diverse Silicon Photonic Add/Drop Switch Supporting 400Gb/s PDM-16QAM (Tu2I.3)
03:15 PM - 03:30 PM     Contributed Submission
We implement a silicon photonic 16-port add-or-drop, with on-chip polarization diversity including polarization splitter rotators and dual switch cores. PDL, DGD of express and add were 0.3dB, <0.1ps and 1.1dB, <3ps respectively. 200Gb/s and 400Gb/s PDM-16QAM signals were transmitted, with 0.1dB ROSNR penalty at 200Gb/s.

Full C-band Nyquist-WDM Interleaver Chip (Tu2I.4)
03:30 PM - 03:45 PM     Contributed Submission
We experimentally demonstrate full C-band coverage of a Nyquist-filtering interleaver for super-channel multiplexing. We show N-WDM super-channel multiplexing with zero guard-band, 12.5-GHz spacing, 0.08 roll-off, and a Q fluctuation <0.3-dB across C-band.


High Speed Silicon Photonic Modulators (Tu2H.1)
02:00 PM - 02:30 PM     Invited Submission
We review the progress on high speed silicon photonic modulators based on dispersion plasma effect. We present the demonstrations of silicon-based 90 Gbaud intensity modulator, 100G CWDM4 transmitter, I-Q modulator and optical frequency comb generator.

Efficient Single-Drive Push-Pull Silicon Mach-Zehnder Modulators with U-Shaped PN Junctions for the O-Band (Tu2H.2)
02:30 PM - 02:45 PM     Contributed Submission
We demonstrate silicon Mach-Zehnder modulators with efficient (VπL = 0.46V cm at a bias of -0.5V) and low-loss phase-shifters for the O-band. A 2-mm long device had a 3-dB bandwidth of 13GHz and supported 24Gb/s modulation.

A 44Gbps High Extinction Ratio Silicon Mach-Zehnder Modulator with a 3D-Integrated 28nm FD-SOI CMOS Driver (Tu2H.3)
02:45 PM - 03:00 PM     Contributed Submission
We present a silicon electro-optic transmitter consisting of a 28nm UTBB FD-SOI CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. At 44 Gbps, the extinction ratio was 6.4 dB at the modulator quadrature operation point.

Silicon Photonics Modulator Architectures for Multi-Level Signal Generation and Transmission (Tu2H.4)
03:00 PM - 03:15 PM     Contributed Submission
We present two SiP modulator architectures for PAM-4 signal generation. We demonstrate the transmission of 56 Gbaud PAM-4 over 1 km of SMF. An 84 Gbaud PAM-4 generation below KP4 FEC threshold is also achieved.

Dual Polarization O-Band Silicon Photonic Intensity Modulator for Stokes Vector Direct Detection Systems (Tu2H.5)
03:15 PM - 03:30 PM     Contributed Submission
We present an O-band dual-polarization silicon photonic intensity-modulator for short reach direct-detection applications. We demonstrate 112 Gb/s DP-OOK transmission over 10 km at a BER of 6.6x10-6 using a Stokes vector direct-detection receiver.

Tapless Locking of Silicon Ring Modulators for WDM Applications (Tu2H.6)
03:30 PM - 03:45 PM     Contributed Submission
Novel method for tapless locking of silicon ring modulators for WDM applications is discussed. Wavelength locking with an athermal operation over the temperature variations of 6C is demonstrated at the data rates of 10 Gbit/s.

Characterization of Electro-Optic Bandwidth of Ultra-High Speed Modulators (Tu2H.7)
03:45 PM - 04:00 PM     Contributed Submission
We propose and demonstrate a method for measuring the bandwidth of electro-optic modulators up to 100 GHz using an RF synthesizer, a Mach-Zehnder modulator, a photodiode, and an optical spectrum analyzer


Subwavelength Index Engineered Waveguides and Devices (Tu3K.3)
04:45 PM - 05:15 PM     Invited Submission
We report our advances in development of subwavelength engineered structures for integrated photonics, specifically high-efficiency fiber-chip couplers, broadband surface grating couplers and ultra-broadband nanophotonic beam splitters.

High Throughput Photonic Packaging (Tu3K.4)
05:30 PM - 06:00 PM     Invited Submission
We have demonstrated photonic packaging compatible with standard, high-throughput, microelectronics assembly lines. We show a 1.3dB fiber-to-chip loss and 1.1dB chip-to-chip loss. We discuss the rationale behind this approach and compare to other packaging directions.


Microprocessor Chip with Photonics I/O (W1A.1)
08:00 AM - 08:30 AM     Invited Submission
In this work, we provide an overview of the technology and architecture of a microprocessor chip with optical I/O. Zero-change photonics integration enabled the chip to be fabricated in a commercial electronics CMOS foundry.

Low Crosstalk Simultaneous 12 ch x 25 Gb/s Operation of High-Density Silicon Photonics Multichannel Receiver (W1A.2)
08:30 AM - 08:45 AM     Contributed Submission
We designed high PI and SI for receiver with the high-density bridge structure and successfully verified simultaneous error-free operations of 12 ch x 25 Gb/s with a small crosstalk penalty of 1.2 dB.

Demonstration of a Packaged Photonic Integrated Network on Chip controlled by an FPGA-based scheduler (W1A.3)
08:45 AM - 09:00 AM     Contributed Submission
The dynamic performance of a packaged photonic network-on-chip (NoC) based on multi-microrings is experimentally demonstrated. Controlled by a scheduler implemented in an FPGA, the packaged photonic NoC exhibits a BER penalty of approximately 0.5 dB.


A Direct Comparison between Heterogeneously Integrated Widely-Tunable Ring-Based Laser Designs (W1E.1)
08:00 AM - 08:15 AM     Contributed Submission
Four ring-based tunable lasers are demonstrated in the heterogeneous silicon platform. Except for double-sided CRR structure, the other three show comparable narrow-linewidth (~200kHz) and output power (~10mW) across entire wide-tuning ranges (~40nm) with SMSR (>40dB).

Silicon Photonic Wavelength Tunable Lasers for High-Capacity Optical Communication System (W1E.3)
08:30 AM - 09:00 AM     Invited Submission
Silicon photonic wavelength-tunable laser diodes consist of a wavelength-tunable filter with silicon ring resonators and a semiconductor optical amplifier. Narrow spectral linewidth lasers for coherent optical communication systems and quantum dot heterogeneous laser were demonstrated.

Flip-Chip-Integrated III-V/Si Hybrid External-Cavity Laser using a Photonic Crystal Reflector (W1E.4)
09:00 AM - 09:15 AM     Contributed Submission
We demonstrate an efficient surface-normal-coupled tunable external-cavity hybrid laser using a novel photonic crystal reflector. The ultra-compact reflector enables a single wavelength reflection and a short laser cavity to improve lasing stability.


Heterogeneously Integrated InP/Si Metal-oxide-semiconductor Capacitor Mach-Zehnder Modulator (W3E.1)
01:00 PM - 01:15 PM     Contributed Submission
We have developed a Mach-Zehnder modulator using a 700-μm-long heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor. It exhibits VπL and insertion loss of 0.41 Vcm and 1.0 dB, respectively. We also demonstrate 25-Gbit/s NRZ signal modulation.

High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor (W3E.2)
01:15 PM - 01:30 PM     Contributed Submission
We demonstrated O-band InGaAsP/Si hybrid MOS optical modulators using direct wafer bonding with a thin Al2O3 bonding interface. Owing to the large electron-induced refractive index change in InGaAsP, we successfully achieved VπL of 0.094 Vcm.

Hybrid III-V/Silicon Integration: Enabling the Next Generation of Advanced Photonic Transmitters (W3E.3)
01:30 PM - 02:00 PM     Invited Submission
We review recent advances on hybrid III-V/Silicon devices using edge coupling. Design of external silicon cavities enables the realization of a broad range of on-chip functionalities as well as advanced hybrid transmitters.

Monolithic Integration of InGaAsP MZI Modulator and InGaAs Driver MOSFET using III-V CMOS Photonics (W3E.4)
02:00 PM - 02:15 PM     Contributed Submission
We monolithically integrated carrier-injection InGaAsP optical modulator and InGaAs MOSFET on III-V-on-insulator wafer. InGaAsP modulator was successfully driven directly by InGaAs driver MOSFET, exhibiting a proof-of-concept of electronic-photonic integration capability of III-V CMOS photonics platform.

Three Modes Multiplexed Photonic Integrated Circuit for Large Capacity Optical Interconnection (W3E.5)
02:15 PM - 02:30 PM     Contributed Submission
We demonstrated a three modes multiplexed photonic integrated circuit suitable for chip-scale large capacity optical interconnection. The 30 Gb/s link including modulation, multiplexer/demultiplexer and detection is experimentally demonstrated with superior performance.

850 nm hybrid vertical cavity laser integration for on-chip silicon photonics light sources (W3E.6)
02:30 PM - 03:00 PM     Invited Submission
The realization of 850 nm hybrid III-V/dielectric VCSELs is reported in order to realize low power consumption integrated light sources for SiN waveguide circuits, which find applications both in short-reach optical communication and optical sensors.


Large-Scale Silicon Photonic Switches Using Electro-Optic MZIs (W4E.1)
03:30 PM - 04:00 PM     Invited Submission
We review our recent progress on silicon photonic switches based on electro-optic MZI and dual-ring assisted MZI switch elements. Phase error corrections are performed using thermal tuning to set the initial switching state.

Silicon 1 × 2 Mode- and Polarization-selective Switch (W4E.2)
04:00 PM - 04:15 PM     Contributed Submission
We experimentally demonstrate an on-chip silicon 1×2 switch that routes 8 data channels on 4 modes and 2 polarizations. The insertion losses are < 8dB, and the crosstalk values are below -15dB. The 8 channels are tested with a 72-Gb/s signal.

Silicon Photonic Switch Subsystem with 900 Monolithically Integrated Calibration Photodiodes and 64-Fiber Package (W4E.4)
04:30 PM - 04:45 PM     Contributed Submission
Monolithic germanium photodiodes on every cell calibrate a 32x32 silicon photonic switch of 448 Mach-Zehnders in 10 minutes. 64 fibers permanently attached through a waveguide concentrator in a wire-bonded BGA achieve 2.9dB C-band TE fiber-to-die.

Switching Devices and Systems Enabled by Advanced Planar Lightwave Circuits (W4E.6)
05:00 PM - 05:30 PM     Invited Submission
We review our recent achievements on the development of a multicast switch (MCS) based on a high-△ planar lightwave circuit (PLC). We present compact and low-loss MCS which consists of ZrO2-SiO2 PLC.


InP Photonic Integrated Circuits (W4G.1)
03:30 PM - 04:30 PM     Tutorial Submission
InP Photonic IC (PIC) materials, integration technology and platforms will be reviewed. Motivations for integration, particulary with active elements, will be summarized. Examples of early PICs and their evolution to today's state-of-the-art will be given. Applications, primarily related to optical fiber communications, will be indicated. Some comparisons with other integration technologies, e.g., Si-photonics, will be given.

Multi-channel interference (MCI) widely tunable laser integrated with semiconductor optical amplifier (W4G.2)
04:30 PM - 04:45 PM     Contributed Submission
We demonstrate the MCI laser integrated with SOA through a two-port multi-mode interference reflector. A tuning range of more than 45 nm with SMSRs up to 47 dB is achieved.

DAC-free Generation of M-QAM Signals with InP Segmented Mach-Zehnder Modulators (W4G.4)
05:00 PM - 05:30 PM     Invited Submission
The concept of DAC-less generation of multi-level optical signals is discussed together with its latest InP-based results. A flexible transmitter sub-assembly enabling 32 GBd M-QAM operation up to 256-QAM is shown.


Driver-Integrated 56-Gb/s Segmented Electrode Silicon Mach Zehnder Modulator Using Optical-Domain Equalization (Th1B.1)
08:00 AM - 08:15 AM     Contributed Submission
We report an IC-driven silicon photonic segmented electrode Mach Zehnder modulator exploiting optical domain feed-forward equalization resulting in 56-Gb/s NRZ operation with BER<10-12. The result could enable FEC-free links for latency sensitive datacenter applications.

56 Gb/s Single-Carrier 16-QAM and 32-QAM Subcarrier Modulation Using a Silicon Micro-Ring Resonator (Th1B.2)
08:15 AM - 08:30 AM     Contributed Submission
Single-carrier, single-polarization subcarrier modulation systems are demonstrated at a bit rate of 56 Gb/s using a silicon micro-ring resonator modulator. Transmission over 10 km SMF is achieved for 16-QAM and 32-QAM by compensating for nonlinear signal distortion.

Complexity Scaling in Silicon Photonics (Th1B.3)
08:30 AM - 09:00 AM     Invited Submission
Silicon photonics provides an excellent platform for scaling photonic system-on-chip complexity and bandwidth. We continue to see chip complexity doubling every 12-18 months.

Integrated 5-channel WDM hybrid III-V/Si transmitter enabling 100Gb/s and beyond (Th1B.4)
09:00 AM - 09:15 AM     Contributed Submission
We report the demonstration of an ultra-compact 5-channel hybrid integrated III-V/Si transmitter. We successfully achieved modulation up to 40 Gbit/s/channel providing a total aggregated capacity of 200 Gbit/s and transmission over 10 km at 21.4 Gbit/s/channel for 100Gbit/s.

69 Gb/s DMT direct modulation of a Heterogeneously Integrated InP-on-Si DFB Laser (Th1B.5)
09:15 AM - 09:30 AM     Contributed Submission
A heterogeneously integrated InP-on-Si DFB laser, with direct modulation bandwidth of 21GHz has been used for the generation of a 69Gb/s discrete multi-tone signal. Transmission at 56Gb/s over 5 km SSMF is demonstrated as well.

Optical Circuit Switching/Multicasting of Burst Mode PAM-4 using a Programmable Silicon Photonic Chip (Th1B.6)
09:30 AM - 09:45 AM     Contributed Submission
Aiming to facilitate increased intra-datacenter throughput and reconfigurability, the use of a programmable silicon photonic chip to achieve optical circuit switching and multicasting of 12.5GBaud burst mode PAM-4 is experimentally demonstrated for the first time.

Ultra-Dense 16x56Gb/s NRZ GeSi EAM-PD Arrays Coupled to Multicore Fiber for Short-Reach 896Gb/s Optical Links (Th1B.7)
09:45 AM - 10:00 AM     Contributed Submission
A 16-channel spatial-division multiplexed transceiver is demonstrated using a multicore fiber coupled to a dense array of co-integrated 56Gb/s GeSi electro-absorption modulators and photodetectors, realizing 896Gb/s aggregate bi-directional bandwidth in 1.47mm2 silicon footprint.


Mode-Evolution-Based, Broadband 1x2 Port High-Pass/Low-Pass Filter for Silicon Photonics (Th1G.2)
08:15 AM - 08:30 AM     Contributed Submission
We demonstrate integrated, mode-evolution-based, 1x2 port high-pass/low-pass filters in a silicon photonics platform that can simultaneously achieve broadband operation, single cutoff wavelength, and a record high filter roll-off of 2.5 dB/nm for the first time.

Silicon Photonic Bragg Grating Devices (Th1G.3)
08:30 AM - 09:00 AM     Invited Submission
Integrated Bragg grating filters in silicon-on-insulator waveguides are evolving from simple broadband reflectors to filters with complex spectral responses and high-speed modulators. We review recent progress and applications of these devices.

Automatic Tuning and Temperature Stabilization of High-Order Silicon Vernier Microring Filters (Th1G.4)
09:00 AM - 09:15 AM     Contributed Submission
Using in-resonator photoconductive heaters to monitor and tune the light intensity inside the resonators, a four-ring Vernier filter is automatically tuned across the entire C-band and stabilized over a 40 °C temperature range.

Silicon Polarization Splitter and Rotator using a Subwavelength Grating based Directional Coupler (Th1G.6)
09:30 AM - 09:45 AM     Contributed Submission
A compact polarization splitter-rotator is experimentally demonstrated by using a subwavelength grating waveguide based directional coupler. Over 13 dB extinction ratios for both polarizations are achieved. Large tolerance (50 nm) to waveguide-width variation is also verified.


Multi-wavelength 100Gb/s Silicon Photonics Based Transceiver with Silica mux/demux and MEMS-coupled InP Lasers (Th3B.1)
01:45 PM - 02:00 PM     Contributed Submission
A QSFP-packaged 100Gb/s CWDM4 transceiver is demonstrated by a hybrid assembly of a commercial silicon photonics chip containing modulators and electronics, a silica based mux/demux PLC, and a MEMS carrier with four InP lasers.

Multi-Tb/s Extended C-Band Tunable Optical Engines Utilizing InP Coherent Photonic Integrated Circuits Operating at 44Gbaud, 16-QAM (Th3B.5)
02:30 PM - 03:00 PM     Invited Submission
We report on the development of optical engines based upon multi-channel Extended C-Band tunable InP PICs operating up to 44Gbaud, 16-QAM for a total capacity of 4.9 Tb/s.


Silicon nitride tri-layer 1×3 couplers with arbitrary splitting ratio for 3D photonic integrated circuits (Th3E.1)
01:00 PM - 01:15 PM     Contributed Submission
we design tri-layer Si3N4 1×3 couplers with arbitrary power splitting ratio and small reflection for 3D photonic integrated circuits. We demonstrate the power splitting ratio from 1:1:4 to 1:22:27 with 0.185dB excess loss.

Ultimately low-loss and compact Si wire 90° waveguide bend composed of clothoid and normal curves for dense optical interconnect PICs (Th3E.2)
01:15 PM - 01:30 PM     Contributed Submission
Ultimately low-loss 90° waveguide bend composed of clothoid and normal curves is proposed for dense optical interconnect PICs. 90 % reduction of the bending loss is experimentally demonstrated with excellent agreement between theory and experiment.

Inverse-designed Ultra-compact Star-crossings Based on PhC-like Subwavelength Structures (Th3E.3)
01:30 PM - 01:45 PM     Contributed Submission
Inverse-designed star-crossings with 8 and 10 ports are proposed, with ultra-short coupling lengths of 5.28μm and 5.4μm respectively. Their measured ILs are less than 1.6dB and 2.4dB respectively over 60nm bandwidth centered 1550nm wavelength.

Passive Waveguide Device Technologies - Building Block of Functionality and Integration (Th3E.5)
02:00 PM - 03:00 PM     Tutorial Submission
Passive waveguide devices and related fabrication technologies are reviewed from the view point of functionality which is related to material and operating principle, and the possible scheme of integration.

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